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公开(公告)号：KR101151159B1
公开(公告)日：2012-06-01
申请号：KR1020060090596
申请日：2006-09-19
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/136 , G02F1/361
CPC classification number: H01L51/105 , C07F9/091 , C07F9/094 , C07F9/2408 , C07F9/2429 , H01L51/0075 , H01L51/0541 , H01L51/0545
Abstract: 본발명은포스페이트계자기조립단분자막을포함하는유기박막트랜지스터및 그제조방법에관한것으로, 보다상세하게는소스/드레인전극과유기반도체층사이에, 분자간가교결합(cross-linking)을형성하지않는단일결합형포스페이트계자기조립단분자막을포함하여, 높은전하이동도의우수한전기적특성을나타내는유기박막트랜지스터및 그제조방법에관한것이다.
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公开(公告)号：KR1020090084448A
公开(公告)日：2009-08-05
申请号：KR1020080010651
申请日：2008-02-01
Applicant: 삼성전자주식회사
CPC classification number: G03F7/0046 , C08G65/007 , C08G65/3353 , C08G65/336 , C08G2650/48 , C08L29/06 , C08L71/02 , H05K3/282 , H05K2201/015 , Y10T428/31529 , C08L2666/04
Abstract: A composition for forming an antioxidant film is provided to form an antioxidant film by a solution process, to be suitable for subsequent processes like Au wiring, and to ensure excellent conductivity. A composition for forming an antioxidant film comprises a fluorinated polymer; or a perfluoropolyether(PFPE) derivative of formula 1: A-CF2O(CF2CF2O)m(CF2O)nCF2-A or formula 2: CF3O(CF2CF2O)m(CF2O)nCF2-A and a PFPE-compatible polymer. In chemical formula 1 and 2, A is A' or RA' wherein A' is a functional group selected from the group consisting of COF, SiX1X2X3, silanol, chlorosilane, carboxylic acid, alcohol, amine, phosphoric acid and their derivatives, and R is C1-C30 substituted or unsubstituted alkylene group; m is 1-50: and n is 1-50.
Abstract translation: 提供了用于形成抗氧化膜的组合物，以通过溶液法形成抗氧化膜，适用于如Au布线等后续工序，并确保优异的导电性。 用于形成抗氧化膜的组合物包括含氟聚合物; 或式1的全氟聚醚（PFPE）衍生物：A-CF2O（CF2CF2O）m（CF2O）nCF2-A或式2：CF3O（CF2CF2O）m（CF2O）nCF2-A和PFPE相容的聚合物。 在化学式1和2中，A是A'或RA'，其中A'是选自COF，SiX 1 X 2 X 3，硅烷醇，氯硅烷，羧酸，醇，胺，磷酸及其衍生物的官能团，R 是C 1 -C 30取代或未取代的亚烷基; m为1-50：n为1-50。
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公开(公告)号：KR1020090017304A
公开(公告)日：2009-02-18
申请号：KR1020070081945
申请日：2007-08-14
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L51/0005 , H01L51/0512 , H01L51/0558
Abstract: An organic semiconductor thin film comprising a bank having an ink drop zone and a channel formulating zone are provided to form the uniform film by a printing method by comprising the bank including the channel-forming zone of the small width. The channel-forming zone forms the channel by moving the ink drop zone and the ink. The ink drop zone is formed on the partition member or the source(40)/drain(50) electrode. The ink drop zone is formed into the hole or the void of the steric shape. The steric shape is a revolution shape including cylinder, sphere, and the elliptical column. The volume of the steric shape is smaller than the volume of the printed ink. The diameter(L) of the channel-forming is smaller than the diameter(a) of the ink. The ink is moved by the capillary attraction.
Abstract translation: 提供包括具有墨滴区域和通道配制区域的堤岸的有机半导体薄膜，以通过包括具有小宽度的沟道形成区域的堤岸的印刷方法形成均匀膜。 通道形成区域通过移动墨滴区域和墨水而形成通道。 在分隔部件或源极（40）/漏极（50）电极上形成墨滴区域。 墨滴区域形成空穴或空间形状。 立体形状是包括圆柱体，球体和椭圆柱的革命形状。 立体形状的体积小于印刷油墨的体积。 通道形成的直径（L）小于墨水的直径（a）。 油墨通过毛细吸引力移动。
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公开(公告)号：KR1020080104572A
公开(公告)日：2008-12-03
申请号：KR1020070051514
申请日：2007-05-28
Applicant: 삼성전자주식회사
IPC: H01L51/00 , H01L29/786 , B82Y40/00
CPC classification number: C07D271/113 , B82Y20/00 , C07B2200/11 , C07F7/1836 , H01L51/5088 , H01L51/5092 , H01L2251/5369
Abstract: The functionalized metal nano-particle, buffer layer comprising the same and electronic device comprising the buffer layer are provided to improve the efficiency of the electric component by forming the ohmic contact. The functionalized metal nanoparticle which is indicated as below chemical formula 1[ M-X-F-Rn], in the equation, M is the metal element selected from the group consisting of the gold(Au), silver(Ag), copper(Cu), palladium(Pd) and platinum(Pt). X is the sulfur(S) or the cyano group(CN). F is the functionalized group selected from the adhesion-enhancing functionalized group, hole injection functionalized group, hole transport functionalized group, electron injecting functionalized group or the group and the electrotransport functionalized group. The electrode which R is the reactive group which forms the covalent bond with the metal oxide. N is the integer of 0 or 1.
Abstract translation: 提供包含该功能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件，以通过形成欧姆接触来提高电子部件的效率。 在等式中，M表示的化学式1 [MXF-Rn]表示的官能化金属纳米粒子是选自金（Au），银（Ag），铜（Cu），钯 （Pd）和铂（Pt）。 X是硫（S）或氰基（CN）。 F是选自增粘功能基团，空穴注入官能团，空穴传递官能团，电子注入官能团或电子传递官能团的官能化基团。 R是与金属氧化物形成共价键的反应性基团的电极。 N是0或1的整数。
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25.发明公开질소를 포함하는 헤테로아로마틱계 리간드/전이금속착화합물, 이를 포함하는 버퍼층 및 상기 버퍼층을포함하는 유기박막 트랜지스터 有权包含异质配体/过渡金属络合物的氮，包含复合物的缓冲层和包含缓冲层的有机薄膜晶体管
公开(公告)号：KR1020080076518A
公开(公告)日：2008-08-20
申请号：KR1020070016551
申请日：2007-02-16
Applicant: 삼성전자주식회사
CPC classification number: C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
Abstract: A nitrogen-containing heteroaromatic ligand/transition metal complex is provided to produce a buffer layer with enhanced carrier injection and electric charge transport in an electric device, so that the buffer layer is useful for producing an organic thin film transistor with enhanced electrical properties including promoted electron or hole-injection and interlayer electric charge transport. A nitrogen-containing heteroaromatic ligand/transition metal complex represented by the formula(1):[R1-X-R2][M(Y)m]^- is useful as a buffer layer material which is able to perform solution process and does not use an acid-dopant, wherein X is optionally substituted C2-C30 heteroaromatic organic group containing nitrogen; R1 and R2 are each independently optionally substituted C1-C30 alkyl group, optionally substitutedC1-C30 heteroalkyl group, optionally substituted C1-C30 alkoxy group, optionally substituted C1-C30 heteroalkoxy group, optionally substituted C6-C30 aryl group, optionally substituted C6-C30 arylalkyl group, optionally substituted C6-C30 aryloxy group, optionally substituted C2-C30 heteroaryl group, optionally substituted C2-C30 heteroarylalkyl group, optionally substituted C2-C30 heteroaryloxy group, optionally substituted C5-C20 cycloalkyl group, optionally substituted C2-C30 heterocycloalkyl group, optionally substituted C1-C30 alkylester group, optionally substituted C1-C30 heteroalkylester group, optionally substituted C6-C30 arylester group, or optionally substituted C2-C30 heteroarylester group; M is a transition metal atom selected from Au, Cu, Pd and Pt; Y is halide, hydroxyl or acetate function group(OAc); and m is an integer from 3 to 4.
Abstract translation: 提供含氮杂芳族配体/过渡金属络合物以在电子器件中产生具有增强的载流子注入和电荷输送的缓冲层，使得缓冲层可用于生产具有增强的电性能的有机薄膜晶体管，包括促进 电子或空穴注入和层间电荷运输。 由式（1）表示的含氮杂芳族配体/过渡金属络合物：[R1-X-R2] [M（Y）m] - 可用作能够进行溶液处理的缓冲层材料 不使用酸 - 掺杂剂，其中X是含氮的任选取代的C2-C30杂芳族有机基团; R 1和R 2各自独立地是任选取代的C 1 -C 30烷基，任选取代的C 1 -C 30杂烷基，任选取代的C 1 -C 30烷氧基，任选取代的C 1 -C 30杂烷氧基，任选取代的C 6 -C 30芳基，任选取代的C 6 -C 30 任选取代的C 2 -C 30杂芳基，任选取代的C 2 -C 30杂芳基烷基，任选取代的C 2 -C 30杂芳氧基，任选取代的C 5 -C 20环烷基，任选取代的C 2 -C 30杂环烷基 ，任选取代的C 1 -C 30烷基酯基，任选取代的C 1 -C 30杂烷基酯基，任选取代的C 6 -C 30芳基酯基或任选取代的C 2 -C 30杂芳基基团; M是选自Au，Cu，Pd和Pt的过渡金属原子; Y为卤化物，羟基或乙酸酯官能团（OAc）; m为3〜4的整数。
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Patent Agency Ranking
公开(公告)号：KR1020080050038A
公开(公告)日：2008-06-05
申请号：KR1020060120779
申请日：2006-12-01
Applicant: 삼성전자주식회사
IPC: H01L29/78
CPC classification number: H01L51/0545 , H01L51/0021 , H01L51/105
Abstract: A method for manufacturing a high-performance organic thin film transistor using oxidation and selective reduction of an organic semiconductor material is provided to improve contact resistance and charge mobility by securing interfacial stability between a semiconductor layer and source/drain electrodes. A gate electrode is formed on a substrate. A gate dielectric is formed over the gate electrode. A semiconductor layer is formed over the gate dielectric by using an organic semiconductor material that is oxidized by an oxidizing agent. The semiconductor layer is selectively reduced to form a metal particle selectively. Source/drain electrodes are formed on the selective reduction portion of the semiconductor layer. During the formation of the semiconductor layer, an organic semiconductor solution is prepared by dissolving the organic semiconductor material into a solvent, an oxidizing agent solution is prepared by dissolving the oxidizing agent into a solvent, and the organic semiconductor solution and the oxidizing agent solution are mixed to be coated on the gate dielectric.
Abstract translation: 提供了使用有机半导体材料的氧化和选择性还原来制造高性能有机薄膜晶体管的方法，以通过确保半导体层和源极/漏极之间的界面稳定性来改善接触电阻和电荷迁移率。 在基板上形成栅电极。 在栅电极上形成栅极电介质。 通过使用被氧化剂氧化的有机半导体材料在栅极电介质上形成半导体层。 选择性地还原半导体层以选择性地形成金属颗粒。 源极/漏极形成在半导体层的选择性还原部分上。 在形成半导体层期间，通过将有机半导体材料溶解在溶剂中制备有机半导体溶液，通过将氧化剂溶解在溶剂中制备氧化剂溶液，将有机半导体溶液和氧化剂溶液 混合以涂覆在栅极电介质上。
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公开(公告)号：KR1020080029453A
公开(公告)日：2008-04-03
申请号：KR1020060095626
申请日：2006-09-29
Applicant: 삼성전자주식회사
CPC classification number: G03F7/0046 , C08G65/007 , C08L29/04 , C08L71/02 , C08L2205/05 , G03F7/032 , G03F7/033 , G03F7/04 , G03F7/0757 , C08L2666/04
Abstract: A copolymer is provided to prevent a deterioration of an organic layer and improve surface selectivity of an ink material to use banks. A copolymer is obtained by copolymerizing a photosensitive polymer and a perfluoropolyether represented by the formula 1 of A-CF2O(CF2CF2O)m(CF2O)nCF2-A or the formula 2 of CF3O(CF2CF2O)m(CF2O)nCF2-A. In the formulae, A is A' or RA', wherein the A' is a functional group selected from the group comprising COF, SiX1X2X3(wherein, X1, X2, and X3 independently are a C1-10 alkyl group, with the proviso that at least one of X1, X2, and X3 is a C1-10 alkoxy group), silanol, chlorosilane, carboxylic acid, alcohol, amine, phosphoric acid, and derivatives thereof, the R is a substituted or unsubstituted alkylene group having 1-30 carbon atoms, wherein the substituent is at least one selected from the group comprising hydroxyl, C1-10 alkyl, hydroxyalkyl, amide, nitro, C2-30 alkenyl, C1-30 alkoxy, and C2-30 alkoxyalkyl groups, m is 1-50, and n is 1-50.
Abstract translation: 提供共聚物以防止有机层的劣化并改善油墨材料使用银行的表面选择性。 通过使感光性聚合物与A-CF 2 O（CF 2 CF 2 O）m（CF 2 O）n CF 2 -A的式1所示的全氟聚醚或CF 3 O（CF 2 CF 2 O）m（CF 2 O）n CF 2 -A的式2表示的共聚物得到共聚物。 在该式中，A是A'或RA'，其中A'是选自COF，SiX 1 X 2 X 3（其中，X 1，X 2和X 3独立地是C 1-10烷基）的官能团，条件是 X 1，X 2和X 3中的至少一个为C 1-10烷氧基），硅烷醇，氯硅烷，羧酸，醇，胺，磷酸及其衍生物，R为取代或未取代的具有1-30 碳原子，其中所述取代基是选自羟基，C 1-10烷基，羟烷基，酰胺，硝基，C 2-30烯基，C 1-30烷氧基和C 2-30烷氧基烷基中的至少一种，m为1-50 ，n为1-50。
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28.发明公开
公开(公告)号：KR1020080025525A
公开(公告)日：2008-03-21
申请号：KR1020060090109
申请日：2006-09-18
Applicant: 삼성전자주식회사
IPC: H01L21/368 , H01L21/208 , H01L21/288
CPC classification number: H01L51/0007 , H01L51/0026 , H01L51/0558 , Y02E10/549
Abstract: A method for forming an organic thin film using solvent effect, an organic thin film manufactured by the method, and an organic electronic device comprising the same are provided to obtain an organic thin film having good properties like uniformity and good ordering degree, etc. Non-solvents are added into compounds including organic material and good solvents. The compounds having the non-solvents are sprayed on a substrate, a thin film is then formed. The organic material is organic semiconductor material or organic insulating material. The organic insulating material is one selected from a group consisting of polyimide, benzene cyclobutene, parylene, polyacrylate, polyvinylealcohol, and polyvinilephenol.
Abstract translation: 提供了使用溶剂效果形成有机薄膜的方法，通过该方法制造的有机薄膜和包含该有机薄膜的有机电子器件，以获得具有均匀性和良好排序程度等良好性能的有机薄膜。 - 溶剂加入包括有机材料和良好溶剂的化合物中。 将具有非溶剂的化合物喷涂在基材上，然后形成薄膜。 有机材料是有机半导体材料或有机绝缘材料。 有机绝缘材料选自聚酰亚胺，苯环丁烯，聚对二甲苯，聚丙烯酸酯，聚乙烯醇和聚维酮酚。
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29.发明公开
公开(公告)号：KR1020070107887A
公开(公告)日：2007-11-08
申请号：KR1020060040429
申请日：2006-05-04
Applicant: 삼성전자주식회사
IPC: C08K5/02 , H01L29/786
CPC classification number: H01L51/052 , H01L51/0003 , H01L51/0036 , H01L51/0545
Abstract: A composition for an organic interlayer dielectric is provided to allow patterning with no need for an etching step using a separate photoresist, and to realize improved current conduction characteristics including hysteresis. A composition for an organic interlayer dielectric comprises a water soluble polymer to which a UV curing agent is added, and a water soluble fluorine compound. The water soluble fluorine compound and the UV curing agent-added water soluble polymer are resent in a ratio of 0.1:1-1:1 on the solid content basis. The water soluble fluorine compound is at least one compound selected from fluoroalkane and derivatives thereof, perfluoroalkyl alcohol ethylene oxide and derivatives thereof, perfluoroalkylcarboxylic acid and salts thereof, perfluoroalkylsulfonic acid and salts thereof, perfluoroalkyloxybenzenesulfonic acid and salts thereof, perfluoroalkylbenzenesulfonic acid and salts thereof, perfluoroalkyl amine and salts thereof, perfluoroalkylsulfonamide and salts thereof, ammonium fluoride, monoethanolamine fluoride and tetramethylammonium fluoride.
Abstract translation: 提供了一种用于有机层间电介质的组合物以允许图案化，而不需要使用单独的光致抗蚀剂的蚀刻步骤，并且实现包括滞后的改善的电流传导特性。 用于有机层间电介质的组合物包括添加有UV固化剂的水溶性聚合物和水溶性氟化合物。 水溶性氟化合物和添加了UV固化剂的水溶性聚合物的固体成分比例为0.1:1-1:1。 水溶性氟化合物是至少一种选自氟烷烃及其衍生物，全氟烷基醇环氧乙烷及其衍生物，全氟烷基羧酸及其盐，全氟烷基磺酸及其盐，全氟烷氧基苯磺酸及其盐，全氟烷基苯磺酸及其盐，全氟烷基 胺及其盐，全氟烷基磺酰胺及其盐，氟化铵，单乙醇胺氟化物和四甲基氟化铵。
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公开(公告)号：KR1019990085420A
公开(公告)日：1999-12-06
申请号：KR1019980017820
申请日：1998-05-18
Applicant: 삼성전자주식회사
IPC: H01L27/108
Abstract: 개선된 폴리실리콘 게이트 제조방법은, 기판상에서 트랜지스터의 게이트로서 기능하는 폴리실리콘 베이스 게이트를 패터닝하고 층간 절연막을 전체상부에 증착한 다음, 평탄화 및 식각을 행하여 상기 베이스 게이트의 상부 근방을 일정두께로 노출시키는 단계와, 전체상부에 폴리실리콘을 증착하고 에치백을 행하여 상기 베이스 게이트의 상부 근방에 연장된 폴리 스페이서 측벽을 만드는 단계와, 상기 스페이서 측벽을 만든 후 산화막 에칭을 전면적으로 행하여 티이 형상의 최종 게이트를 살리사이데이션 전의 게이트로서 형성하는 단계를 가진다.
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