公开(公告)号：KR1020050008231A

公开(公告)日：2005-01-21

申请号：KR1020030048087

申请日：2003-07-14

Applicant: 삼성전자주식회사

Inventor： 이효종 ,  이종원 ,  이성배 ,  하상록 ,  홍덕호 ,  박무용 ,  권영백 ,  손홍성

IPC: H01L21/304

Abstract: PURPOSE: A head pressure adjustment device of a CMP apparatus and an adjusting method thereof are provided to adjust respectively pressures applied to each region by using an end point of a target. CONSTITUTION: A polishing table(3) is rotated toward a predetermined direction. A carrier head(10) is rotatably installed at an upper side of the polishing table. A wafer is installed on a bottom face of the carrier head. The carrier head includes at least two pressing regions. A fluid supply unit supplies the pressure-adjusted fluid to the pressing regions. Two end point detectors(61,63) are installed at corresponding positions to the pressing regions in order to detect polishing end points of each region. A controller(50) is used for outputting pressure adjustment signals to the fluid supply unit.

Abstract translation: 目的：提供一种CMP设备的头部压力调节装置及其调节方法，用于通过使用目标的终点来分别施加到每个区域的压力。 构成：抛光台（3）朝向预定方向旋转。 承载头（10）可旋转地安装在抛光台的上侧。 晶片安装在承载头的底面上。 承载头包括至少两个按压区域。 流体供应单元将压力调节的流体供应到按压区域。 两个端点检测器（61,63）安装在与按压区域相对应的位置，以便检测每个区域的抛光端点。 控制器（50）用于将压力调节信号输出到流体供应单元。

公开(公告)号：KR100443084B1

公开(公告)日：2004-08-04

申请号：KR1020010058749

申请日：2001-09-21

Applicant: 삼성전자주식회사

Inventor： 한자형 ,  하상록 ,  손홍성 ,  홍덕호 ,  박병률

IPC: H01L21/304

CPC classification number: H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/7684

Abstract: In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.

Abstract translation: 在用于抛光Cu金属层的方法和设备以及用于形成Cu金属布线的方法中，从晶片去除由Cu金属层的表面氧化产生的Cu氧化物。 抛光Cu氧化物的Cu金属层被抛光。 通过使用上述方法抛光Cu金属层，可以防止在随后的抛光期间由于存在残留的Cu氧化物而导致的工艺失败，例如划痕。

公开(公告)号：KR1020040058651A

公开(公告)日：2004-07-05

申请号：KR1020020085008

申请日：2002-12-27

Applicant: 삼성전자주식회사

Inventor： 하상록 ,  손홍성 ,  한자형 ,  이성배 ,  홍덕호

IPC: H01L21/304

Abstract: PURPOSE: A semiconductor wafer having an MP(Monitoring Point) is provided to secure the reliability of verification for an etching and CMP(Chemical Mechanical Polishing) process by forming the first and second MPs in a wafer. CONSTITUTION: A semiconductor wafer(30) is provided with a plurality of semiconductor device regions(32) and chip cut regions(34) for defining the semiconductor device regions. The semiconductor wafer further includes a plurality of first MPs(35) in each chip cut region for measuring the thickness of an etched oxide layer for the verification of an etching process and a plurality of second MPs(33) between the first MPs in the chip cut region for measuring the thickness of a polished oxide layer for the verification of a CMP process. The first MP is spaced apart from the second MP.

Abstract translation: 目的：提供具有MP（监测点）的半导体晶片，以通过在晶片中形成第一和第二MP来确保用于蚀刻和CMP（化学机械抛光）工艺的验证的可靠性。 构成：半导体晶片（30）设置有用于限定半导体器件区域的多个半导体器件区域（32）和切屑区域（34）。 半导体晶片还包括在每个切屑区域中的多个第一MP（35），用于测量用于验证蚀刻工艺的蚀刻氧化物层的厚度，以及芯片中的第一MP之间的多个第二MP（33） 用于测量抛光氧化物层的厚度以用于CMP过程的验证。 第一MP与第二MP间隔开。

公开(公告)号：KR1020030075580A

公开(公告)日：2003-09-26

申请号：KR1020020014865

申请日：2002-03-19

Applicant: 삼성전자주식회사

Inventor： 홍덕호 ,  하상록 ,  김종균 ,  손홍성 ,  한자형 ,  이성배

IPC: H01L21/28

Abstract: PURPOSE: A method for forming a metal line using a damascene process is provided to be capable of uniformly conserving the thickness of an insulating layer by using a diffusion barrier as a polish stop layer when carrying out a CMP(Chemical Mechanical Polishing) process. CONSTITUTION: The first and second insulating layer(101,103) are sequentially formed at the upper portion of a semiconductor substrate for forming a multilayer dielectric including a damascene pattern(105). A diffusion barrier(107) is formed at the resultant structure. Then, a copper layer(109) is thickly formed for filling the resultant structure. The first CMP process is carried out at the copper layer by using the diffusion barrier as a polish stop layer. Then, the polish stop layer is removed by carrying out the second CMP process for forming a copper line. Preferably, the diffusion barrier is made of TaN.

Abstract translation: 目的：提供一种使用镶嵌工艺形成金属线的方法，当进行CMP（化学机械抛光）工艺时，通过使用扩散阻挡层作为抛光停止层，能够均匀地保留绝缘层的厚度。 构成：第一和第二绝缘层（101,103）依次形成在用于形成包括镶嵌图案（105）的多层电介质的半导体衬底的上部。 在所得结构处形成扩散阻挡层（107）。 然后，厚度形成铜层（109）以填充所得到的结构。 通过使用扩散阻挡层作为抛光停止层，在铜层上进行第一CMP工艺。 然后，通过进行用于形成铜线的第二CMP工艺来去除抛光停止层。 优选地，扩散阻挡层由TaN制成。