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公开(公告)号：KR101869371B1
公开(公告)日：2018-06-21
申请号：KR1020110072210
申请日：2011-07-21
Applicant: 삼성전자주식회사
IPC: H04N5/363 , H04N13/00 , H01L27/146 , H04N5/232
CPC classification number: H04N5/357 , H04N5/3696 , H04N5/3745 , H04N5/378
Abstract: 피사체까지의거리측정을위하여피사체에변조된송신광을조사한다. 피사체로부터반사된수신광에의해거리픽셀의광검출영역에서발생된광전하를, 복조신호에응답하여거리픽셀의임시저장영역에저장한다. 거리픽셀의플로팅확산영역에리셋전압을인가한후 플로팅확산영역의전압에상응하는노이즈전압을검출한다. 노이즈전압을검출한후 임시저장영역과플로팅확산영역을전기적으로연결한다. 임시저장영역과플로팅확산영역을전기적으로연결한후 플로팅확산영역의전압에상응하는복조전압을검출한다. 노이즈전압및 상기복조전압의차이로부터복조신호의위상에상응하는유효전압을결정한다.
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公开(公告)号：KR1020170070693A
公开(公告)日：2017-06-22
申请号：KR1020150178523
申请日：2015-12-14
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H04N5/369
CPC classification number: H01L27/307 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14641 , H01L27/14645 , H01L27/14665 , H01L27/14689 , H01L51/441 , H01L51/447 , Y02E10/549
Abstract: 본발명의기술적사상에의한이미지센서는, 제1 면및 상기제1 면과대향하며빛이입사되는제2 면을포함하는기판; 상기기판내에형성된반도체광전변환소자; 상기기판내의상기제1 면과상기반도체광전변환소자사이에서, 상기제1 면과수직한제1 방향으로연장되는게이트전극; 및상기기판의상기제2 면상에적층되는유기(organic) 광전변환소자;를포함할수 있다.
Abstract translation: 根据本发明的一个方面，提供了一种图像传感器，包括：衬底，包括第一表面和与所述第一表面相对并且光入射到其中的第二表面; 形成在基板上的半导体光电转换元件; 栅电极，在与所述第一面垂直的第一方向上，在所述基板的所述第一面与所述半导体光电转换元件之间延伸; 以及堆叠在衬底的第二表面上的有机光电转换元件。
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公开(公告)号：KR101701920B1
公开(公告)日：2017-02-03
申请号：KR1020100020023
申请日：2010-03-05
Applicant: 삼성전자주식회사
IPC: H01L31/10
CPC classification number: H01L29/18 , H01L31/0322 , H01L31/103 , H01L31/109 , Y02E10/541
Abstract: 포토다이오드및 이의제조방법, 이를이용한광전소자에서, 포토다이오드는 P형반도체물질막패턴을포함한다. 또한, 상기 P형반도체물질막패턴의적어도일부표면과접합된 N형칼코게나이드화합물을포함한다. 이와같이, 낮은에너지밴드갭을갖는화합물반도체를재료로형성된포토다이오드는매우높은광전변환효율을갖는다.
Abstract translation: 光电二极管包括p型半导体材料和n型硫属化物化合物。 p型半导体材料和n型硫属化物化合物形成pn结。
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公开(公告)号：KR1020160017168A
公开(公告)日：2016-02-16
申请号：KR1020140098249
申请日：2014-07-31
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/307
Abstract: 본발명은이미지센서에관한것으로, 부유확산영역및 픽셀회로를포함하는기판, 상기기판상의층간절연막, 상기층간절연막상의콘택노드및 제1 전극, 상기콘택노드는상기제1 전극보다두껍고, 상기제1 전극의상면을덮으며상기콘택노드와상기제1 전극사이로연장되는유전막, 상기유전막상에배치되고, 상기콘택노드와접속하는채널반도체패턴및 상기채널반도체패턴상의광전변환막을포함하고, 상기채널반도체패턴은상기광전변환막보다전자이동도가높은반도체물질을포함하는이미지센서가제공된다.
Abstract translation: 图像传感器技术领域本发明涉及一种图像传感器。 图像传感器包括：衬底，其包括浮动扩散区域和像素电路;衬底上的层间绝缘层;层间绝缘层上的第一电极和接触节点，其中接触节点比第一电极厚;电介质 层，其覆盖第一电极的上表面并且在接触节点和第一电极之间延伸，布置在电介质层上并连接到接触节点的沟道半导体图案，以及沟道半导体上的光电转换层 模式。 沟道半导体图案包括具有比光电转换层高的电子迁移率的半导体材料。
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Patent Agency Ranking
公开(公告)号：KR1020140058208A
公开(公告)日：2014-05-14
申请号：KR1020120124944
申请日：2012-11-06
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L31/0324 , H01L27/14665 , H01L31/02164 , H01L31/109
Abstract: An image sensor is provided. The image sensor comprises a substrate; a first material membrane arranged on the substrate and containing chalcogen compounds; and a detecting unit connected to the first material membrane and detecting an electrical change in the first material membrane. The chalcogen compound contains at least one of A_xB_yS_1_-x-y, A_xB_yTe_1_-x-y, and A_xB_ySe_1-x-y (0
Abstract translation: 提供图像传感器。 图像传感器包括基板; 第一材料膜，布置在基底上并含有硫属化合物; 以及检测单元，连接到第一材料膜并检测第一材料膜中的电变化。 硫属化合物包含A_xB_yS_1_-x-y，A_xB_yTe_1_-x-y和A_xB_ySe_1-x-y（0
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公开(公告)号：KR1020140047497A
公开(公告)日：2014-04-22
申请号：KR1020130024617
申请日：2013-03-07
Applicant: 삼성전자주식회사
IPC: H04N5/369
CPC classification number: H04N5/363 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14643 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/378
Abstract: A binary image sensor according to an embodiment of the present invention comprises: binary pixels, each having a transistor structure, connected between drain lines and column lines and generating photons in response to incident light; sense amplifiers connected to column lines and detecting voltages corresponding to a current flowing through the column lines when the binary pixels apply a gate voltage to any one of the gate lines connected to gates; and an accumulator which accumulates binary output values of the sense amplifiers.
Abstract translation: 根据本发明的实施例的二进制图像传感器包括：二进制像素，每个具有晶体管结构，连接在漏极线和列线之间，并响应入射光产生光子; 当二进制像素将栅极电压施加到连接到栅极的任何一条栅极线时，连接到列线的检测放大器和检测对应于流过列线的电流的电压; 以及累加器，其累积读出放大器的二进制输出值。
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公开(公告)号：KR1020110090501A
公开(公告)日：2011-08-10
申请号：KR1020100010321
申请日：2010-02-04
Applicant: 삼성전자주식회사
CPC classification number: G01C3/08 , H01J40/14 , G01S7/4865
Abstract: PURPOSE: A sensor, a method of operating the same and a data processing system comprising the sensor are provided to accurately measure distance information by compensating the loss of photoelectron due to thermal diffusion in a demodulating process at a sensor. CONSTITUTION: A timing controller can generate a plurality of packets(P~NP, where N is a natural number) as shown in Fig. 2c. Each of the packets(P~NP) comprises a first section(corresponding to T1 in Fig.2c; for example, referred to as an on-time section) and a second section(corresponding to T2 in Fig.2c; for example, referred to as an off-time section). During the first section, the timing controller outputs two oscillation signals(Pa and Pb), which oscillate between first and second levels, respectively. During the second section, the timing controller outputs DC voltage.
Abstract translation: 目的：提供一种传感器，其操作方法和包括该传感器的数据处理系统，通过在传感器的解调过程中补偿由于热扩散引起的光电子损耗来精确地测量距离信息。 构成：定时控制器可以产生多个分组（P〜NP，其中N是自然数），如图3所示。 2C。 每个分组（P〜NP）包括第一部分（对应于图2C中的T1;例如，称为准时段）和第二部分（对应于图2C中的T2;例如， 称为休假时段）。 在第一部分中，定时控制器分别输出在第一和第二电平之间振荡的两个振荡信号（Pa和Pb）。 在第二部分，定时控制器输出直流电压。
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公开(公告)号：KR1020100137627A
公开(公告)日：2010-12-31
申请号：KR1020090055763
申请日：2009-06-23
Applicant: 삼성전자주식회사
Inventor： 이태연
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L45/1233 , H01L27/2409 , H01L45/06 , H01L45/1246 , H01L45/148 , H01L45/1616 , H01L45/1683 , Y10S438/962 , Y10S977/762 , Y10S977/763 , Y10S977/778 , H01L45/143 , H01L45/144
Abstract: PURPOSE: A phase change memory device and a method for manufacturing the same are provided to ensure fine contact area in a phase change layer by forming nano-wire network using a porous oxide layer. CONSTITUTION: An interlayer insulating layer(100) is formed on a semiconductor substrate. A lower electrode(110) is formed on the interlayer insulating layer. A porous insulating layer(120) is formed on the lower electrode. A single element-based phase change layer(130) is formed on the porous insulating layer. An upper electrode(140) is formed on the phase change layer. In case of the formation of the single element-based phase change layer, a nano-wire network phase change layer is simultaneously formed in the porous insulating film.
Abstract translation: 目的：提供一种相变存储器件及其制造方法，以通过使用多孔氧化物层形成纳米线网来确保相变层中的良好的接触面积。 构成：在半导体衬底上形成层间绝缘层（100）。 在层间绝缘层上形成下电极（110）。 在下电极上形成多孔绝缘层（120）。 在多孔绝缘层上形成单个元件基相变层（130）。 在相变层上形成上电极（140）。 在形成单元素相变层的情况下，在多孔绝缘膜中同时形成纳米线网络相变层。
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公开(公告)号：KR1020090084561A
公开(公告)日：2009-08-05
申请号：KR1020080010817
申请日：2008-02-01
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L45/06 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/148 , H01L45/1625 , H01L45/141
Abstract: A phase change material, a phase change memory device including the same, and a fabrication and operation method are provided to improve the retention characteristic. Alloy comprises silicon(Si) and antimony(Sb). The alloy is the Si-O-Sb alloy including the oxygen. The other element is more included in the Si-O-Sb alloy besides Si, O, and Sb. The phase change memory device comprises a switching element(42) and a storage node(40). The storage node is formed with the alloy including the silicon(Si) and antimony(Sb). A lower film is formed to be connected to the switching element. A phase change material layer(36) is formed on the lower film. The upper film is formed on the phase change material layer.
Abstract translation: 提供相变材料，包括该相变材料的相变存储器件以及制造和操作方法来改善保持特性。 合金包括硅（Si）和锑（Sb）。 该合金是包含氧的Si-O-Sb合金。 除了Si，O和Sb之外，Si-O-Sb合金中还含有另一种元素。 相变存储器件包括开关元件（42）和存储节点（40）。 存储节点由包含硅（Si）和锑（Sb）的合金形成。 形成下部膜以与开关元件连接。 在下膜上形成相变材料层（36）。 上层膜形成在相变材料层上。
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