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公开(公告)号：KR1020150023102A
公开(公告)日：2015-03-05
申请号：KR1020130099638
申请日：2013-08-22
Applicant: 재단법인대구경북과학기술원
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , H01L31/04
Abstract: 본 기재는CZTS계 박막 태양전지를 제조하는 방법으로서, 기판을 준비하는 단계 (S1), 상기 기판 상에 제 1 전극을 형성하는 단계 (S2); 상기 제 1 전극 상에 Cu 전구체, Sn 전구체 및 Zn 전구체를 증착하여, 각각 2 이상의 Cu 전구체층, Sn 전구체층 및 Zn 전구체층을 형성하는 단계 (S3); 및 상기 증착된 금속 전구체를 황화 또는 셀렌화 기체 분위기 하에서 열처리하여 광흡수층을 형성하는 단계 (S4)를 포함하며, 여기서, 상기 단계 (S3)는 상기 제 1 전극 상에 Zn 전구체층을 먼저 증착하고, Cu 전구체층의 양면이 Sn 전구체층과 인접하고, 상기 Sn 전구체층의 적어도 일면이 Zn 전구체층과 인접하록 금속 전구체를 증착하는 것을 포함한다.
Abstract translation: 本公开涉及制造基于CZTS的薄膜太阳能电池的方法。 它包括：准备衬底的步骤（S1） 在所述基板上形成第一电极的工序（S2）; 在第一电极上沉积Cu前体，Sn前体和Zn前体的步骤（S3），并形成至少两个Cu前体层，Sn前体层和Zn前体层; 以及在S或Se气体气氛下进行沉积的金属前体的热处理并形成光吸收层的步骤（S4），其中步骤（S3）沉积金属前体以允许Cu前体的两侧接近 Sn前体层，并使Sn前体层的至少一侧接近Zn前体层。
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公开(公告)号：KR1020140062207A
公开(公告)日：2014-05-23
申请号：KR1020120128542
申请日：2012-11-14
Applicant: 재단법인대구경북과학기술원
IPC: H01L31/042 , H01L31/072 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/042 , H01L31/072 , H01L31/18
Abstract: The present invention relates to a stretchable inorganic compound solar cell which can efficiently manufacture a solar cell by a process for transferring an inorganic compound solar cell onto a stretchable substrate by using elastic polymer. The structure includes a backside electrode formed on the stretchable substrate; a light absorption layer formed on the backside electrode; a buffer layer formed on the light absorption layer; an n type material layer formed on the buffer layer and a transparent electrode and upper metal electrode layer formed on the n type material layer.
Abstract translation: 本发明涉及通过使用弹性聚合物将无机化合物太阳能电池转移到伸缩性基板上的方法，能够有效地制造太阳能电池的伸缩性无机化合物太阳能电池。 该结构包括形成在可拉伸基板上的背面电极; 形成在背面电极上的光吸收层; 形成在所述光吸收层上的缓冲层; 形成在缓冲层上的n型材料层和形成在n型材料层上的透明电极和上部金属电极层。
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公开(公告)号：KR1020140061610A
公开(公告)日：2014-05-22
申请号：KR1020120128050
申请日：2012-11-13
Applicant: 재단법인대구경북과학기술원
IPC: H01L31/18 , H01L31/042 , H01L31/0749
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , H01L31/042 , H01L31/0749
Abstract: The present invention relates to a device for manufacturing a compound semiconductor and a method of manufacturing a compound semiconductor using the same. More specifically, the device for manufacturing a compound semiconductor includes: a reaction chamber which includes a heating waiting area where an evaporation source is not heated and a heating area where the evaporation source can be heated; an evaporation source deposition unit which is placed inside the reaction chamber and in which the evaporation source including more than one kind of VIA-group elements is deposited; a substrate on the surface of which a sample including more than one kind of elements selected among IB-group elements, IIB-group elements, IIIA-group elements, VA-group elements, and IVA-group elements is formed; a heating unit which is placed separately from the evaporation source deposition unit and heats the heating area, but not the waiting area, to heat the substrate; a transferring unit which is connected to the evaporation source deposition unit and transfers the evaporation source deposition unit from the waiting area to the heating area; a transferring gas supply unit which supplies transferring gas to the reaction chamber; and a transferring gas discharge unit which discharges transferring gas in the reaction chamber. According to the present invention, the device for manufacturing a compound semiconductor is able to supply VIA-group elements consecutively and continuously to the inside of a thermal-treatment device differently from the existing method which thermal-treats an excessive amount of an evaporation source with a sample and accordingly is able to control the level of evaporation of the VIA-group elements, thereby guiding uniform reaction of precursors.
Abstract translation: 本发明涉及一种化合物半导体的制造装置及其制造方法。 更具体地，用于制造化合物半导体的装置包括：反应室，其包括不加热蒸发源的加热等待区域和可以加热蒸发源的加热区域; 蒸发源沉积单元，其被放置在反应室内部，并且其中沉积包括多于一种VIA族元素的蒸发源; 形成表面上的基板，其包含选自IB族元素，IIB族元素，IIIA族元素，VA-基元素和IVA族元素中的多种元素的样品; 加热单元，其与蒸发源沉积单元分开放置并加热加热区域而不是等待区域以加热基板; 传送单元，其连接到所述蒸发源沉积单元，并将所述蒸发源沉积单元从所述等待区域传送到所述加热区域; 转移气体供给单元，其向所述反应室供给转移气体; 以及排出反应室中的转移气体的转移气体排出单元。 根据本发明，化合物半导体的制造装置能够与热处理装置的内部连续且连续地供给VIA族元素，与现有的热处理过量的蒸发源的方法不同， 样品，因此能够控制VIA族元素的蒸发水平，从而引导前体的均匀反应。
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公开(公告)号：KR101394689B1
公开(公告)日：2014-05-15
申请号：KR1020120111700
申请日：2012-10-09
Applicant: 재단법인대구경북과학기술원
Abstract: 본 발명의 일실시예는 신축성 기판, 그 신축성 기판의 제조 장치 및 제조 방법에 관한 것이다. 즉, 본 발명의 실시예는 PDMS 소재로 열경화된 기판 본체의 내부에 UV 경화성 소재로 UV 경화된 보강 부재를 형성할 수 있다. 따라서, 본 발명의 실시예에 따른 신축성 기판은 신축성과 함께 찢김 강도(tear strength)를 충분히 확보할 수 있어 외부 충격에 의한 신축성 기판의 찌어짐을 방지할 수 있다.
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公开(公告)号：KR1020140047760A
公开(公告)日：2014-04-23
申请号：KR1020120113480
申请日：2012-10-12
Applicant: 재단법인대구경북과학기술원
IPC: H01L31/042 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/18 , H01L31/042
Abstract: According to one aspect of the present invention, provided is a method of manufacturing a solar cell light absorption layer which includes a step of preparing a substrate; a step of stacking a backside electrode on the substrate; a step of stacking a metal precursor on the backside electrode layer; and a step of performing a thermal process on the substrate where the backside electrode layer and the metal precursor layer are stacked in a selenium atmosphere. [Reference numerals] (AA) Start; (BB) End; (S10) Step of preparing a substrate; (S20) Step of forming a backside electrode layer on the substrate; (S30) Step of forming a metal precursor layer on a backside of electrode layer; (S40) Perform a thermal process in a selenium atmosphere
Abstract translation: 根据本发明的一个方面，提供一种制造太阳能电池光吸收层的方法，该方法包括制备衬底的步骤; 将背面电极层叠在基板上的工序; 在背面电极层上层叠金属前体的工序; 以及在硒气氛中堆叠背面电极层和金属前体层的基板上进行热处理的步骤。 （附图标记）（AA）开始; （BB）结束; （S10）准备基板的工序; （S20）在基板上形成背面电极层的工序; （S30）在电极层的背面形成金属前体层的工序; （S40）在硒气氛中进行热处理
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Patent Agency Ranking
公开(公告)号：KR1020140028202A
公开(公告)日：2014-03-10
申请号：KR1020120093633
申请日：2012-08-27
Applicant: 재단법인대구경북과학기술원
IPC: G02F1/1334 , G02F1/139
CPC classification number: G02F1/1334 , A61B5/742 , G02F1/139
Abstract: A digital radiation image display device according to the present invention comprises a first transparent electrode of a flat plate type; a light reaction layer formed on one surface of the first transparent electrode; a second transparent electrode of a flat plate type; and a polymer dispersed liquid crystal layer which is formed between the light reaction layer and one surface of the second transparent electrode, aligns liquid crystal molecules in a liquid crystal drop located in the location where power is selectively applied by the light reaction layer in the predetermined direction or in the arbitrary direction, or aligns liquid crystal molecules in a liquid crystal drop located in the location where power is not applied in the arbitrary direction or in the predetermined direction so that a phase can be formed, wherein the light reaction layer forms a moving route of a current for only a portion where radiation is irradiated.
Abstract translation: 根据本发明的数字放射线图像显示装置包括平板型的第一透明电极; 形成在第一透明电极的一个表面上的光反应层; 平板型的第二透明电极; 以及形成在所述光反应层和所述第二透明电极的一个表面之间的聚合物分散液晶层，将位于所述光反应层选择施加功率的位置中的液晶分子对准所述预定的 方向或任意方向，或者将液晶分子对准位于不向任意方向或规定方向上施加电力的位置的液晶分子，使得能够形成相位，其中，光反应层形成 只有辐射照射的部分的电流的移动路线。
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公开(公告)号：KR101076724B1
公开(公告)日：2011-10-26
申请号：KR1020090089545
申请日：2009-09-22
Applicant: 재단법인대구경북과학기술원
IPC: H01L31/047
CPC classification number: Y02E10/50
Abstract: 연결층에의해전기적으로연결되면서입사광의방향에따라순차적으로적층된하부셀 및상부셀을포함하되, 상부셀로서유기계태양전지셀, 하부셀로서칼코지나이드계태양전지셀을포함하는탠덤형태양전지가제공된다.
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公开(公告)号：KR1020110075944A
公开(公告)日：2011-07-06
申请号：KR1020090132518
申请日：2009-12-29
Applicant: 재단법인대구경북과학기술원
Abstract: PURPOSE: A pixel structure for a liquid crystal display is provided to remove the threshold voltage influence of a transistor. CONSTITUTION: A first gate line is separated from a second gate line and is arranged in parallel. A data line crosses the first and second gate lines. A gate electrode is electrically connected to a first gate line. A drain electrode is electrically connected to an NMOS transistor data line. The gate electrode is electrically connected to a second gate line. A source electrode is electrically connected to the data line. The drain electrode is electrically connected to the source electrode of an NMOS transistor(310). A PMOS transistor(320) includes the source electrode and the drain electrode. A liquid crystal capacitor is electrically connected to the source electrode of the NMOS transistor.
Abstract translation: 目的：提供液晶显示器的像素结构，以消除晶体管的阈值电压影响。 构成：第一栅极线与第二栅极线分离并且并联布置。 数据线与第一和第二栅极线交叉。 栅电极电连接到第一栅极线。 漏电极与NMOS晶体管数据线电连接。 栅极电连接到第二栅极线。 源电极与数据线电连接。 漏极电连接到NMOS晶体管（310）的源电极。 PMOS晶体管（320）包括源电极和漏电极。 液晶电容器电连接到NMOS晶体管的源电极。
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29.发明公开스페이서와 배향막을 동시에 형성할 수 있는 광배향성 광경화 조성물, 상기 광배향성 광경화 조성물을 사용하여 스페이서와 배향막을 동시에 형성하는 방법 및 이에 의하여동시에 형성된 스페이서와 배향막 有权用于生产间隔件和对准层的光致变色和光致抗蚀剂组合物照相机同时使用相同的间隔件和对准层的制造方法，使用其制造间隔件和对准层
公开(公告)号：KR1020100071625A
公开(公告)日：2010-06-29
申请号：KR1020080130412
申请日：2008-12-19
Applicant: 재단법인대구경북과학기술원
Abstract: PURPOSE: A photo alignment-photo curable composition, a formation method of a spacer and an alignment layer using thereof, and the spacer and the alignment layer are provided to simplify the manufacturing process, and to reduce the manufacturing cost. CONSTITUTION: A photo alignment-photo curable composition contains a photo alignment polymer including a photo-reactive group showing the photo anisotropy, and an oligomer including a photo polymerizable reactor. 5~10wt% of oligomer is included to the total composition. A formation method of a spacer and an alignment layer at the same time using the composition comprises the following steps: forming a layer of the photo alignment-photo curable composition on a substrate; transferring the shape of the spacer and the alignment layer using a PDMS stamp; and curing the alignment layer including the shape of the spacer by irradiating polarized light ultraviolet rays.
Abstract translation: 目的：提供光取向光固化性组合物，间隔物的形成方法及其取向层，以及间隔物和取向层，以简化制造工序，降低制造成本。 构成：光取向光固化性组合物含有含有显示光异向性的光反应性基团的光取向聚合物和含有光聚合反应器的低聚物。 5〜10wt％的低聚物包括在总组合物中。 使用该组合物同时形成间隔物和取向层的方法包括以下步骤：在基材上形成光取向光固化性组合物层; 使用PDMS印章转印间隔物和取向层的形状; 并通过照射偏振光紫外线固化包括间隔物的形状的取向层。
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公开(公告)号：KR102042656B1
公开(公告)日：2019-11-11
申请号：KR1020130099638
申请日：2013-08-22
Applicant: 재단법인대구경북과학기술원
IPC: H01L31/032 , H01L31/18 , H01L31/0224 , H01L31/0392 , H01L31/072
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