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公开(公告)号：KR1020170121963A
公开(公告)日：2017-11-03
申请号：KR1020160050910
申请日：2016-04-26
Applicant: 한국과학기술연구원
Abstract: 본발명은나트륨-유황(Na-S) 전지에서유황과같이양극으로사용될수 있는무기입자가코팅된탄소펠트및 이의제조방법에관한것으로, 이에따르면, 무기입자전구체또는무기입자분말을유기바인더와같이사용하여수십나노에서수백나노크기의무기입자만으로이루어진코팅막을탄소펠트에직접적으로형성할수 있으며, 별도의공정없이도균일한, 결함및 손상없는깨끗한코팅막을탄소펠트상에형성할수 있다. 또한건조하는방향에따라아래부분의코팅막이두꺼워지는경사구조의탄소펠트를얻을수 있다.
Abstract translation: 本发明是一种钠硫（钠-S）涉及涂层的电池的制造方法是作为阳极的无机粒子的碳毡和衍生物，如硫，根据这一点，有机粘合剂，无机颗粒的前体或无机颗粒粉末和 作为可以直接形成为从几十仅由无机粒子尺寸的涂膜纳米至几百纳米的碳毡使用，其可以形成在一个单独的，干净的，均匀的涂层没有缺陷和不与碳损坏毡过程。 此外，根据干燥方向，可以获得具有其中下部的涂膜变厚的倾斜结构的碳毡。
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公开(公告)号：KR101627371B1
公开(公告)日：2016-06-07
申请号：KR1020150025827
申请日：2015-02-24
Applicant: 한국과학기술연구원
IPC: C01B31/36
CPC classification number: C01B32/956 , C01P2004/62 , C01P2004/64
Abstract: 본발명은입도조절이가능한탄화규소분말의제조방법에관한것으로서, 더욱상세하게는ⅰ)액상규소원과고상탄소원을원료물질로준비하는단계, ⅱ)상기원료물질의분산용액에서액상규소원을젤화(gelation)하여고상탄소원이고루분산된젤을제조하는단계, ⅲ)젤을열처리하여 SiO-C 복합체분말을제조하는단계, 및ⅳ) SiO-C 복합체분말을열탄소환원반응하여탄화규소분말을제조하는단계를포함하고있으며, 상기 SiO-C 복합체분말의입자크기별분급및/또는열탄소환원반응온도및 시간조절을통하여원하는입자크기로조절이가능한탄화규소분말의제조방법에관한것이다.
Abstract translation: 本发明涉及一种生产具有尺寸可调颗粒的碳化硅粉末的方法，更具体地说，涉及一种生产碳化硅粉末的方法，包括以下步骤：i）制备液硅源和固体碳源 原料; ii）在原料的分散溶液中胶化液态硅源以制备固体碳均匀分布的凝胶; iii）热处理凝胶以制备SiO2-C复合粉末; 和iv）对所述SiO 2 -C复合粉末进行碳热还原以制备碳化硅粉末，其中SiO 2 -C复合粉末通过按照尺寸和/或调节温度和时间来进行热分解来调节颗粒尺寸 反应。
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公开(公告)号：KR1020130110775A
公开(公告)日：2013-10-10
申请号：KR1020120033004
申请日：2012-03-30
Applicant: 한국과학기술연구원
IPC: C23C10/34
CPC classification number: B05D7/14 , C23C8/02 , C23C8/70 , C23C8/80 , C23C10/02 , C23C10/08 , C23C10/60
Abstract: PURPOSE: A method for forming a cobalt boride coating layer on an ion-based metal surface is provided to improve the corrosion resistance, abrasion resistance, and oxidation resistance of steel by an elaborate coating which hardly has a fault, such as pore. CONSTITUTION: A method for forming a cobalt boride coating layer on an ion-based metal surface comprises the following steps of: forming the inner layer of an ion-cobalt boride composition on an ion-based metal surface by using a pack cementation process; forming the outermost layer of the cobalt boride composition on the inner layer by using the pack cementation process; and reducing the activity of Fe in order to suppress the generation of ion-based generation gas by the pack cementation process. The cobalt process pack powder consists of 2 to 60 wt% of cobalt powder, 1 to 10 wt% of NH4Cl powder, and 30 to 97 wt% of Al2O3 powder.
Abstract translation: 目的：提供一种在离子基金属表面上形成钴硼化物涂层的方法，通过难以产生诸如孔的缺陷的精细涂层来提高钢的耐腐蚀性，耐磨性和抗氧化性。 构成：用于在离子基金属表面上形成硼化钴涂层的方法包括以下步骤：通过使用包装胶结法在离子基金属表面上形成离子钴硼化物组合物的内层; 通过使用包装胶结法在内层上形成钴硼化物组合物的最外层; 并降低Fe的活性，以抑制通过包装胶结法生成离子型发生气体。 钴工艺包粉末由2〜60重量％的钴粉末，1〜10重量％的NH 4 Cl粉末和30〜97重量％的Al 2 O 3粉末组成。
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公开(公告)号：KR1020130104447A
公开(公告)日：2013-09-25
申请号：KR1020120025947
申请日：2012-03-14
Applicant: 한국과학기술연구원 , 엘지이노텍 주식회사
CPC classification number: C01B31/36 , C01B32/956 , C01B33/12
Abstract: PURPOSE: A production method of silicon carbide powder is provided to control the size and the crystalline of the silicon carbide powder by adjusting the heat processing temperature and time, and changing the composition of a gaseous silicon source and a solid carbon source. CONSTITUTION: A production method of silicon carbide powder comprises the following steps: mixing and drying metallic silicon, silica powder, and a thermoplastic resin to obtain a starting raw material for producing a gaseous silicon source; locating the starting raw material for producing the gaseous silicon source on the bottom of a graphite crucible, locating a graphite separator on the upper side of the starting raw material for producing the gaseous silicon source, and locating a solid carbon source on the upper side of the graphite separator before closing a lid of the graphite crucible to form a reaction system to produce the silicon carbide powder; and heat processing the reaction system under the argon atmosphere.
Abstract translation: 目的：提供碳化硅粉末的制造方法，通过调节热处理温度和时间，改变气态硅源和固体碳源的组成来控制碳化硅粉末的尺寸和结晶。 构成：碳化硅粉末的制造方法包括以下步骤：将金属硅，二氧化硅粉末和热塑性树脂混合干燥，得到气态硅源的制造原料， 将用于生产气态硅源的起始原料定位在石墨坩埚的底部，将石墨隔板定位在用于生产气态硅源的起始原料的上侧，并将固体碳源定位在 在石墨坩埚盖上关闭石墨隔板，形成碳化硅粉末的反应体系; 并在氩气氛下热处理反应体系。
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公开(公告)号：KR101262077B1
公开(公告)日：2013-05-08
申请号：KR1020110088085
申请日：2011-08-31
Applicant: 한국과학기술연구원
IPC: C04B35/10 , C04B35/565 , C04B35/109 , C04B35/01
CPC classification number: C04B35/6303 , C04B35/565 , C04B35/6263 , C04B35/66 , C04B2235/3208 , C04B2235/3217 , C04B2235/3218 , C04B2235/3246 , C04B2235/3418 , C04B2235/3826 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5472 , C04B2235/6562 , C04B2235/6565 , C04B2235/77 , C04B2235/96 , C04B2235/9684
Abstract: 본발명은알루미나(AlO), 탄화규소(SiC)를포함하는내화제혼합물에알루미나시멘트와지르콘, 알루미나바인더를첨가한부정형내화물에관한것이다. 본발명의내화물은높은강도와밀도를나타내며, 내침식성이크게향상된것으로, 이는지르콘이산화칼슘(CaO) 와반응하여, 슬래그에의한침식을크게억제하는데 기인한것이다. 알루미나바인더를사용하여, 건조가빠르며충분한취급강도를갖추고있으며, 열처리후 수축이거의일어나지않고, 기공율이적으며, 높은강도를나타내므로특히가스화기에사용될시매우유용하다.
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Patent Agency Ranking
公开(公告)号：KR101247691B1
公开(公告)日：2013-04-01
申请号：KR1020110083705
申请日：2011-08-22
Applicant: 한국과학기술연구원
IPC: C04B35/565 , C04B35/567 , C04B35/10 , C04B35/657
CPC classification number: C04B35/443 , C04B35/565 , C04B35/6303 , C04B35/66 , C04B2235/3217 , C04B2235/3218 , C04B2235/3222 , C04B2235/3826 , C04B2235/5427 , C04B2235/5436 , C04B2235/5445 , C04B2235/5472 , C04B2235/77 , C04B2235/95 , C04B2235/96 , C04B2235/9692
Abstract: 본 발명은 석탄가스화기 반응기에 사용되는 내화물에 관한 것으로, 석탄슬래그의 침식에 강하고 1500℃ 이상의 고온에서 사용이 가능한, 마그네시아와 알루미나의 비가 몰비로 1:2-1:3으로 이루어진 알루미나 잉여 스피넬 고용체와 탄화규소의 비가 중량비로 25:75-75:25인 내화재료에 1-15 중량부의 미분의 알파알루미나 그리고 감마알루미나를 내화재료에 대하여 1-15 중량부를 첨가하는 것을 특징으로 하는 내침식성이 증진된 석탄가스화기용 내화벽돌에 관한 것이다. 또한 본 발명의 방법에 따르면, 산화크롬이 함유되지 않아 크롬의 휘발 없이 1500℃ 이상의 고온에서 사용할 수 있는 친환경적 고온용 내화물을 제공할 수 있다.
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公开(公告)号：KR101084735B1
公开(公告)日：2011-11-22
申请号：KR1020090050059
申请日：2009-06-05
Applicant: 한국과학기술연구원
IPC: C01B31/36 , C04B35/565
Abstract: 본 발명은 탄화규소 분말의 제조방법에 관한 것으로서, 더욱 상세하게 설명을 하면, 입도 분산도를 탄소전구체와 규소전구체의 몰비율로 조절하고, 평균입도 크기를 산으로 조절하여 탄화규소 분말을 제조하는 방법에 관한 것이다. 본 발명은 기존 탄화규소 분말의 제조방법과는 달리, 톨루엔설폰산을 사용하지 않기 때문에 유해 성분인 황의 발생이 없으며, 고온 열처리를 2회 이상 되풀이하지 않는 바, 경제성이 우수하다.
탄화규소, 탄소전구체, 규소전구체, 열처리-
公开(公告)号：KR1020100018862A
公开(公告)日：2010-02-18
申请号：KR1020080077565
申请日：2008-08-07
Applicant: 한국과학기술연구원
CPC classification number: C03C17/3655 , C03C17/25 , C03C23/007 , C03C2217/948 , C03C2218/113 , H01L2251/308
Abstract: PURPOSE: A method for forming a transparent conducting film is provided to obtain a transparent conducting film with excellent adhesion, visible light transmittance and surface uniformity by successively coating two kinds of ITO sol. CONSTITUTION: A method for forming a transparent conducting film comprises the steps of: (i) coating a transparent substrate with a first conducting sol that has weak adhesive power even though crystals are formed at a relatively low temperature; (ii) forming a first transparent conducting film by heat-treating the transparent substrate coated with the first conducting sol; (iii) forming a mixed layer of the first transparent conducting film and a second transparent conductor by soaking a second transparent conducting sol into the first transparent conducting film, wherein the second transparent conducting sol has stronger adhesive power than the first transparent conducting sol and is crystallized at a relatively high temperature; and (iv) forming a polycrystalline transparent conducting film by heat-treating the first transparent conducting film and the second transparent conductor.
Abstract translation: 目的：提供一种形成透明导电膜的方法，通过连续涂布两种ITO溶胶，获得具有优异粘合性，可见光透射率和表面均匀性的透明导电膜。 构成：形成透明导电膜的方法包括以下步骤：（i）即使在相对较低的温度下形成晶体，也可以用具有弱粘合力的第一导电溶胶涂覆透明基板; （ii）通过对涂覆有第一导电溶胶的透明基板进行热处理形成第一透明导电膜; （iii）通过将第二透明导电溶胶浸入第一透明导电膜中形成第一透明导电膜和第二透明导体的混合层，其中第二透明导电溶胶具有比第一透明导电溶胶更强的粘合力，并且是 在较高的温度下结晶; 和（iv）通过热处理第一透明导电膜和第二透明导体形成多晶透明导电膜。
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公开(公告)号：KR1020090007167A
公开(公告)日：2009-01-16
申请号：KR1020070070866
申请日：2007-07-13
Applicant: 한국과학기술연구원
CPC classification number: C04B35/573 , C01B32/956 , C04B37/006 , C04B2235/424 , C04B2235/48 , C04B2237/083 , C04B2237/365 , C04B2237/61
Abstract: An apparatus for manufacturing reaction sintered bodies is provided to overcome size limitation of a heating furnace by using a continuous sintering process when manufacturing reaction bonded silicon carbide porous workpieces with various shapes and sizes including plates and tubes, and a method for manufacturing reaction bonded silicon carbide porous bodies by a continuous process using the same is provided. An apparatus for manufacturing a reaction sintered body comprises a transfer unit(14), a formed body injection part(12), a heating part(13), a sintered body discharge part, a first vacuum shutter(17), a second vacuum shutter(18), and a heating furnace. The transfer unit transfers formed bodies. The formed body injection part, heating part, and sintered body discharge part are included in the transfer unit and arranged in order in a direction that the formed bodies are transferred. The first vacuum shutter is installed between the formed body injection part and heating part such that the first vacuum shutter can be opened or closed to divide the formed body injection part and heating part. The second vacuum shutter is installed between the heating part and sintered body discharge part such that the second vacuum shutter can be opened or closed to divide the heating part and sintered body discharge part. The heating furnace is installed on the circumference of the heating part to form a hot zone in the heating part.
Abstract translation: 提供了制造反应烧结体的装置，以便制造具有各种形状和尺寸的反应结合的碳化硅多孔工件（包括板和管）时，通过使用连续烧结工艺来克服加热炉的尺寸限制，以及制造反应结合的碳化硅的方法 提供通过使用其的连续方法的多孔体。 制造反应烧结体的装置包括转印单元（14），成形体注入部分（12），加热部分（13），烧结体排出部分，第一真空快门（17），第二真空快门 （18）和加热炉。 转移单元转移成形体。 成型体注入部，加热部和烧结体排出部被包含在转印单元中，并且沿着成形体的转印方向依次配置。 第一真空闸门安装在成形体喷射部分和加热部分之间，使得第一真空闸门能够打开或关闭以分开成形体喷射部分和加热部分。 第二真空闸门安装在加热部件和烧结体排出部件之间，使得第二真空闸门能够打开或关闭以分开加热部件和烧结体排出部件。 加热炉安装在加热部的圆周上，在加热部形成热区。
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公开(公告)号：KR1020040071940A
公开(公告)日：2004-08-16
申请号：KR1020030007861
申请日：2003-02-07
Applicant: 한국과학기술연구원
Abstract: PURPOSE: A method for preparing a nano-film by selective area coating is provided, to prepare a metal/oxide multilayered bottom-up nano-film without the deterioration of characteristics. CONSTITUTION: The method comprises the steps of preparing a charged particle of an atom or molecule unit by using a material forming a thin film; forming a bias locally on the electrode where nano-sized pattern is formed; and coating the charged particle on the nano-pattern selectively to form a nano-film. Preferably the material forming a thin film is at least one selected from the group consisting of metals, oxides and nitrides; and a substrate (electrode) is locally biased by the self-bias due to the difference of area or the difference of charge density.
Abstract translation: 目的：提供一种通过选择性区域涂布制备纳米膜的方法，以制备金属/氧化物多层自下而上的纳米膜，而不会降低其特性。 构成：该方法包括通过使用形成薄膜的材料制备原子或分子单元的带电粒子的步骤; 在形成纳米尺寸图案的电极上局部形成偏压; 并且选择性地在纳米图案上涂覆带电粒子以形成纳米膜。 优选地，形成薄膜的材料是选自金属，氧化物和氮化物中的至少一种; 并且由于面积的差异或电荷密度的差异，基板（电极）被自偏置局部偏置。
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