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公开(公告)号：KR1020000009936A
公开(公告)日：2000-02-15
申请号：KR1019980030621
申请日：1998-07-29
Applicant: 한국과학기술연구원
IPC: H01C7/10
Abstract: PURPOSE: A SrTiO3 disc and chip varistors fabrication method are provided to decrease the manufacturing cost and simplify the manufacturing process. CONSTITUTION: The disc-type varistors formation method comprises the steps of mixing, milling and calcinating of SrCO3, BaCO3, CaCO3, TiO2Nb2O5 and SiO2 powder; pressing the powder by disc-type mold; sintering at deoxidation atmosphere; re-oxidizing at 800-1000°C, thereby forming a disc-type varistors; forming electrodes at upper and lower parts of the disc-type varistors, respectively; and bonding a lead wire to the electrodes. Also, the chip-type ceramic varistors fabrication method is same as the disc-type.
Abstract translation: 目的：提供SrTiO3磁盘和片式压敏电阻制造方法，以降低制造成本，简化制造工艺。 构成：盘式变阻器的形成方法包括混合，研磨和煅烧SrCO3，BaCO3，CaCO3，TiO2Nb2O5和SiO2粉末的步骤; 用盘式模具压粉; 在脱氧气氛下烧结; 在800-1000℃再氧化，从而形成盘式变阻器; 分别在盘式变阻器的上部和下部形成电极; 并且将引线接合到所述电极。 此外，芯片式陶瓷压敏电阻的制造方法与盘式相同。
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公开(公告)号：KR1020000009735A
公开(公告)日：2000-02-15
申请号：KR1019980030344
申请日：1998-07-28
Applicant: 한국과학기술연구원
IPC: C04B35/495
CPC classification number: H01B3/12 , C04B2235/3232 , C04B2235/3255
Abstract: PURPOSE: A composition comprising 1 mole MgNb2O6 and 0-1 mole TiO2 as a main composition and 0-0.4 wt.% of MO3(M¬6+ = W, Mo, Cr, Se, Te, and Po) as additives is provided which can be sintered at a relatively low temperature. CONSTITUTION: The composition comprises MgNb2O6 + xTiO2(where x = 0-1.0) and 0-0.4 weight% of MO3(where M is one element selected from W, Mo, Cr, Se, Te, and Po). For an example, 1 mole MgO and 1 mole Nb2O5 are mixed by a wet ball milling method and calcined at 1,100°C for 4 hr. The solution added with 2 wt.% PVA binder is sprayed on the calcined powder to give granules with a size of about 200 micro meters. A disk sample with a diameter of 10 mm and a thickness of 4.8 mm is formed with granules at pressure of 98 Mpa, held at 300-500°C for above 3 hr to remove the binder and calcined at 1,150-1,250°C for 4 hr in the atmosphere at a heating speed of 5°C/min. The sintered sample is grinded with a SiC abrasive paper to be a ratio of diameter to thickness of about 0.45. The composition has a relatively lower sintering temperature(1,200°C), higher quality coefficient(QX f is more than 40,000 GHz) and dielectric constant(epsilon is more than 25), more stable temperature coefficient(tau f =-49 from to +38 ppm/°C) than conventional high-frequency dielectric composition.
Abstract translation: 目的：提供包含1摩尔MgNb 2 O 6和0-1摩尔TiO 2作为主要组合物和0-0.4重量％的MO 3（M 6+ = W，Mo，Cr，Se，Te和Po）作为添加剂的组合物 其可以在相对低的温度下烧结。 构成：组合物包含MgNb2O6 + xTiO2（其中x = 0-1.0）和0-0.4重量％的MO3（其中M是选自W，Mo，Cr，Se，Te和Po中的一种元素）。 例如，通过湿球磨法将1摩尔MgO和1摩尔Nb 2 O 5混合，并在1100℃下煅烧4小时。 将加入2重量％PVA粘合剂的溶液喷涂在煅烧粉末上，得到尺寸为约200微米的颗粒。 在压力为98Mpa的颗粒上形成直径为10mm，厚度为4.8mm的圆盘样品，在300-500℃下保持3小时以除去粘合剂，并在1150-1,250℃下煅烧4 hr，加热速度为5℃/ min。 将烧结的样品用SiC砂纸研磨成直径与厚度之比约为0.45。 该组合物具有相对较低的烧结温度（1200℃），更高的质量系数（QX f大于40,000GHz）和介电常数（ε大于25），更稳定的温度系数（τf = -49从+ 38ppm /℃）比传统的高频电介质组合物。
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公开(公告)号：KR1020080044604A
公开(公告)日：2008-05-21
申请号：KR1020060113643
申请日：2006-11-17
Applicant: 한국과학기술연구원
CPC classification number: C01B32/956 , B82Y30/00 , B82Y40/00 , C01P2004/16 , C01P2004/64
Abstract: A manufacturing method of SiC nanowire is provided to obtain SiC nanowire having excellent field emission property which is useful for the preparation of semiconductor nanostructure field emission device in an economical process and selective patterning as a cathode material by employing SiC compound. A manufacturing method of SiC nanowire comprises steps of: forming a catalyst layer which is deposited with a catalyst selected from gold, nickel, cobalt or alloy thereof, on a substrate; feeding 1-20sccm of dichloromethylvinylsilane and 100-1000sccm of carrier gas in a reducing atmosphere which is maintained at 900-1200deg.C and maintaining the state for 10-120 minutes. The nanowire has a diameter of 200-200nm and a length of 10-100mum. The substrate is silicone or sapphire. The carrier gas is inert gas or reducing gas, comprising at least one selected from hydrogen gas, Ar gas, N2 gas and CH4 gas.
Abstract translation: 提供SiC纳米线的制造方法，以获得具有优异的场致发射特性的SiC纳米线，其可用于在经济的工艺中制备半导体纳米结构场致发射器件，并通过使用SiC化合物作为阴极材料的选择性图案化。 SiC纳米线的制造方法包括以下步骤：在基板上形成沉积有选自金，镍，钴或其合金的催化剂的催化剂层; 在保持在900-1200℃的还原气氛中进料1-20sccm的二氯甲基乙烯基硅烷和100-1000sccm的载气，并保持10-120分钟。 纳米线的直径为200-200nm，长度为10-100μm。 基材是硅胶或蓝宝石。 载气是惰性气体或还原气体，包括选自氢气，Ar气体，N 2气体和CH 4气体中的至少一种。
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公开(公告)号：KR100806679B1
公开(公告)日：2008-02-26
申请号：KR1020060035496
申请日：2006-04-19
Applicant: 한국과학기술연구원
IPC: C04B35/453 , C03C8/14
Abstract: 본 발명은 온도특성 제어가 가능한 저온소성용 유전체 세라믹스 조성물에 관한 것으로서, 더욱 상세하게는 ZnNb
2 O
6 와 TiO
2 의 혼합 유전체에, 특정의 SiO
2 -B
2 O
3 -Al
2 O
3 -CaO-ZnO계 유리프리트를 혼합된 것으로, 상기 유리프리트의 조성 및 성분비를 최적화하여, 유전율이 15 ∼ 35이고, 품질계수가 3,000 ∼ 16,000 GHz이고, 공진 주파수 온도계수(τ
f )가 -100 ∼ +100 ppm/℃범위에서 가변 등의 유전특성의 제어가 가능하여 저온소성 다층기판에서 공진기(resonator) 형태의 필터, 안테나 등으로 구현이 용이한 온도특성 제어가 가능한 저온소성용 유전체 세라믹스 조성물에 관한 것이다.
저온소성, 유리프리트, 세라믹 유전체-
公开(公告)号：KR100592585B1
公开(公告)日：2006-06-26
申请号：KR1020040006178
申请日：2004-01-30
Applicant: 한국과학기술연구원
IPC: C04B35/48
Abstract: 본 발명은 온도특성 제어가 가능한 저온소성용 고유전율 세라믹 조성물에 관한 것으로서, 더욱 상세하게는 CaZrO
3 상과 CaTiO
3 상의 혼합 고유전율 유전체가 주성분으로 함유되어 있고 저온소성을 위해 Li
2 OB
2 O
3 -SiO
2 -CaO-Al
2 O
3- ZnO계 유리프리트가 소량 함유된 조성을 이루고 있으며, 사용된 유전체와 유리프리트의 조성 성분비 조절에 의해 유전율이 25 ∼ 35 범위이고 900 ℃ 이하의 온도에서 소성이 가능하면서 공진 주파수의 온도계수(T
cf )를 -20 ∼ +100 ppm/℃의 범위에서 자유롭게 가변할 수 있는 특징을 가지고 있어, 저온동시소성세라믹(LTCC) 다층기판 및 모듈에서 공진 주파수의 온도계수가 중요시되는 필터 및 안테나 등 공진기 구성에 효과적으로 적용될 수 있는 세라믹 조성물에 관한 것이다.
CaZrO3, CaTiO3, CaO-TiO2-ZrO2계 유전체, Li2O-B2O3-SiO2-CaO-Al2O3-ZnO계 유리프리트, 온도특성 제어, 저온소성, 세라믹스-
Patent Agency Ranking
公开(公告)号：KR1020060056484A
公开(公告)日：2006-05-25
申请号：KR1020040095591
申请日：2004-11-22
Applicant: 한국과학기술연구원
CPC classification number: C23C16/483 , B82Y30/00 , B82Y40/00 , C01G9/02 , C01P2004/64 , C23C16/407
Abstract: 본 발명은 새로운 방식의 펄스 레이저 증착법(pulsed laser deposition: PLD)에 의하여 수십 나노미터 크기의 미세한 반도체 나노구조체를 합성하고, 더욱 나아가 나노선을 원하는 모양으로 정렬시키는 일련의 장치 및 공정기술을 그 내용으로 한다.
본 발명에서는 기존의 방식인 내부 기판 가열방식(Cold-wall type)이 아니라 반응관을 외부에서 가열하는 방식(Hot-wall type)인 것과 합성온도가 기존공정에 비해 매우 높은 500~1500℃인 것을 가장 큰 특징으로 한다.
이 방법에 의해서 직경이 매우 가는 ZnO, CdSe, Si 반도체 나노선을 고밀도로 합성할 수 있고, 더 나아가 다양한 형태의 나노구조체를 합성할 수 있다.
또한, 고온공정에 의해 촉매인 금 패턴 위에서 선택적인 나노구조체의 성장이 가능하며 전기적 특성 제어를 위한 도핑이 용이하다.
이러한 공정기술은 광전자소자, 레이저, 화학센서 등 다양한 나노소자의 대량생산에 효과적으로 활용할 수 있다.
나노선, 산화아연, 나노구조체, 펄스 레이저 증착법(PLD), 금 촉매-
公开(公告)号：KR1020040085939A
公开(公告)日：2004-10-08
申请号：KR1020030020800
申请日：2003-04-02
Applicant: 한국과학기술연구원
IPC: C04B35/14
CPC classification number: C03C14/00 , C03C14/004 , C03C2214/04 , C03C2214/30 , H01L23/15 , H01L2924/0002 , H01L2924/09701 , H05K1/0306 , H01L2924/00
Abstract: PURPOSE: Provided is a dielectric ceramic composition based on borosilicate glass containing alkali earth oxides for low loss and low temperature cofired ceramic multilayer substrates. CONSTITUTION: The low temperature cofired ceramic(LTCC) composition comprises borosilicate glass composition containing 68-72mol% of SiO2, 20-24mol% of B2O3, 4-12mol% of Al2O3 and alkali earth oxides such as MgO, CaO, SrO and ZnO, and 30-40wt.%(based on the glass composition) of Al2O3 as a filler. The dielectric ceramic composition is produced by the following steps of: ball-milling the above materials, drying and grinding; melting mixtures at 1400-1600deg.C; quenching the melt to get glass; grinding glass to obtain glass frit powder; mixing glass powder with Al2O3, filler; pressure forming; sintering 850-950deg.C. The glass composition has 4.0-4.4 of dielectric constant and 0.06-0.2 of dielectric loss in case that the composition comprises 70mol% of SiO2, 22mol% of B2O3, 2mol% of Al2O3, and 6mol% of CaO and/or ZnO. Also the on-set temperature of sintering shrinkage is changed according to the ratio of more than two materials selected from alkali earth oxides.
Abstract translation: 目的：提供一种基于硼硅酸盐玻璃的介电陶瓷组合物，其含有用于低损耗和低温共烧陶瓷多层基材的碱土金属氧化物。 构成：低温共烧陶瓷（LTCC）组合物包含含有68-72mol％SiO 2，20-24mol％B 2 O 3，4-12mol％Al 2 O 3和碱土金属氧化物如MgO，CaO，SrO和ZnO的硼硅酸盐玻璃组合物， 和30-40重量％（基于玻璃组成）的Al 2 O 3作为填料。 电介质陶瓷组合物通过以下步骤制备：对上述材料进行球磨，干燥和研磨; 熔融混合物在1400-1600℃; 淬火熔化玻璃; 研磨玻璃获得玻璃粉; 混合玻璃粉与Al2O3，填料; 压力成形; 烧结850-950℃。 在组合物包含70mol％的SiO 2，22mol％的B 2 O 3，2mol％的Al 2 O 3和6mol％的CaO和/或ZnO的情况下，玻璃组合物的介电常数为4.0-4.4和介电损耗为0.06-0.2。 烧结收缩率的设定温度也根据选自碱土金属氧化物的两种以上的材料的比例而变化。
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公开(公告)号：KR1020040034234A
公开(公告)日：2004-04-28
申请号：KR1020020064327
申请日：2002-10-21
Applicant: 한국과학기술연구원
IPC: H01Q13/08
Abstract: PURPOSE: A high gain microstrip antenna is provided to achieve improved gain and directivity of the antenna by arranging dielectrics having a high dielectric constant on the top of the antenna. CONSTITUTION: A high gain microstrip antenna comprises a first dielectric layer(340); a grounding surface(300) formed on the first dielectric layer, and which has a plurality of slots(320); a plurality of feeder lines(310) formed at the lower surface of the first dielectric layer and overlapped with the slots of the grounding surface; a first air layer(350) formed on the first dielectric layer; a plurality of patches(100) formed in the air layer such that the patches transmit electric waves through the feeder lines and the slots; a second dielectric layer(360) formed on the first air layer, and which has a dielectric constant higher than the dielectric constant of the first dielectric layer; a second air layer(330) formed at the lower surface of the first dielectric layer; a metal surface(370) formed at the lower surface of the second air layer; a plurality of T-junctions for distributing electric waves to the feeder lines; and a waveguide for transmitting electric waves to the T-junctions.
Abstract translation: 目的：提供高增益微带天线，以通过在天线的顶部布置具有高介电常数的电介质来实现改进的天线增益和方向性。 构成：高增益微带天线包括第一电介质层（340）; 形成在所述第一电介质层上的接地表面（300），并且具有多个槽（320）; 多个馈电线（310），形成在所述第一电介质层的下表面处并与所述接地表面的所述槽重叠; 形成在所述第一电介质层上的第一空气层（350） 形成在空气层中的多个贴片（100），使得贴片通过馈线和插槽传输电波; 形成在第一空气层上的第二电介质层（360），其介电常数高于第一介电层的介电常数; 形成在第一电介质层的下表面处的第二空气层（330） 形成在第二空气层的下表面处的金属表面（370） 用于将电波分配到馈线的多个T形接头; 以及用于将电波传输到T形接头的波导。
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公开(公告)号：KR100406646B1
公开(公告)日：2003-11-21
申请号：KR1020000059080
申请日：2000-10-07
Applicant: 한국과학기술연구원
IPC: C04B35/634 , C04B35/01 , H01G4/12
Abstract: PURPOSE: Provided is a preparation method of relaxer ferroelectric ceramic thick films for multi-layer ceramic capacitors by spreading ferroelectric ceramic powder on a high molecular matrix homogeneously without sintering. CONSTITUTION: The preparation method comprises the steps of: grinding Pb-based relaxer ferroelectric ceramics, Pb(B'2+1/3 B''5+2/3)O3 system or Pb(B'3+1/2 B''5+1/2)O3 system, where B'2+ is one of Mg2+, Ni2+, Zn2+ and Cd2+, B''5+ is one of Nb5+ and Ta5+, and B'3+ is one of Fe3+, Sc3+ and In3+; melting a high molecular material, polypropylene less than 10000 in molecular weight, at 180-220deg.C; adding relaxer ferroelectric ceramic powder to melted high molecular material, and mixing in a rate of 20-40rpm for 20-40min for a homogeneous mixture; forming a thick film by spin-coating or extruding the mixture on a substrate, Cu-substrate, where the dropping amounts of the mixture are 30-60drops in a rate of 1-3drops/min, and the substrate is rotated in a rate of 300-500rpm, in the spin coating. The resultant ferroelectric thick films for multi-layer ceramic capacitors prepared without sintering have 1.32-2.90micrometer of thickness and 78-1905 of dielectric constant(at 25deg.C).
Abstract translation: 目的：提供一种通过将铁电陶瓷粉末均匀分散在高分子基体上而不烧结而制备用于多层陶瓷电容器的松弛剂铁电陶瓷厚膜的制备方法。 本发明的制备方法包括以下步骤：将铅基松弛剂铁电陶瓷，Pb（B'2 + 1 / 3B'5 + 2/3）O3体系或Pb（B'3 + 1 / 2B' '5 + 1/2）O3体系，其中B'2 +为Mg2 +，Ni2 +，Zn2 +和Cd2 +中的一种，B“5 +为Nb5 +和Ta5 +中的一种，B'3 +为Fe3 +，Sc3 + IN3 +; 熔化高分子材料，分子量低于10000的聚丙烯，熔点180-220℃; 将松弛剂铁电陶瓷粉末加入到熔融的高分子材料中，并以20-40rpm的速度混合20-40分钟，得到均匀的混合物; 通过旋涂或挤出混合物形成厚膜，所述基底为Cu-基底，其中以1-3滴/分钟的速率滴加30-60滴，并且基底以 在旋转涂层中为300-500rpm。 所得到的不经烧结的多层陶瓷电容器用铁电厚膜具有1.32-2.90微米的厚度和78-1905的介电常数（在25℃）。
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公开(公告)号：KR100371056B1
公开(公告)日：2003-02-06
申请号：KR1020000059208
申请日：2000-10-09
Applicant: 한국과학기술연구원
IPC: H01C7/115
Abstract: PURPOSE: A method for manufacturing a varistor-capacitor multifunctional device is provided to simultaneously obtain varistor characteristic and capacitor characteristic of a dielectric index larger than 10000 and dielectric loss less than 5%. CONSTITUTION: A SrTiO3 SMD varistor-capacitor multifunctional device is manufactured by using Sr0.9Ca0.1TiO3 as basic material powder. The basic material powder is subjected to wet milling after Nb2O5 of 0.4-0.6 mol% is added and SiO2 of 0.1-0.3 mol% and MnO of 0.1-0.3 mol% are added. Organic vehicle is added to the basic material powder after wet milling to form slurry. The slurry is molded by a tape caster to form a ceramic sheet. After cutting the ceramic sheet, internal electrodes are printed on the ceramic sheet by Ag/Pd or Ni electrodes. Three to five ceramic sheets are deposited on and on and subjected to pre-sintering at 1100°C for 1 hour. The sintered ceramic is re-oxidized in a furnace with the air at 900-1100°C.
Abstract translation: 目的：提供一种制造压敏电阻 - 电容器多功能器件的方法，以同时获得介电指数大于10000且介电损耗小于5％的压敏电阻特性和电容特性。 构成：SrTiO3 SMD压敏电阻多功能器件是以Sr0.9Ca0.1TiO3为基本粉末制成的。 在加入0.4-0.6摩尔％的Nb 2 O 5并加入0.1-0.3摩尔％的SiO 2和0.1-0.3摩尔％的MnO后，将基础材料粉末进行湿磨。 在湿磨之后将有机载体添加到基础材料粉末中以形成浆料。 浆料通过带式连铸机成型以形成陶瓷片。 在切割陶瓷片之后，通过Ag / Pd或Ni电极将内部电极印刷在陶瓷片上。 三到五个陶瓷片沉积在其上和之上并在1100℃下进行预烧结1小时。 烧结的陶瓷在炉中用空气在900-1100℃下再氧化。
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