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公开(公告)号：KR1020030041417A
公开(公告)日：2003-05-27
申请号：KR1020010072201
申请日：2001-11-20
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.
Abstract translation: 目的：提供能够应用于传感器的磁存储器和字线制作方法，以实现相对于字线/位线的图案，以最大化磁化转化所需的磁场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 种子膜（106）沉积在沟槽的整个表面上。 将铜材料的导电膜（108）涂覆在种皮膜上，以充分覆盖沟槽。 进行CMP处理直到绝缘膜的上表面露出。
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公开(公告)号：KR100302583B1
公开(公告)日：2001-09-22
申请号：KR1019980018771
申请日：1998-05-25
Applicant: 한국과학기술연구원
IPC: H01F1/04
Abstract: PURPOSE: A method for producing Tb-Dy-Fe self deformation alloy composite is provided to produce Tb-Dy-Fe self deformation alloy composite with a good physical properties in a cost effective and simple manner by bulk treating a powder of Tb-Dy-Fe self deformation alloy by means of a polymer binder. CONSTITUTION: An ingot of Tb-Dy-Fe alloy is formed by a vacuum inductive melting or a vacuum arc melting. The ingot is pulverized into a powder. The powder is mixed with a polymer binder. The mixture is shaped and cured. The Tb-Dy-Fe alloy is composed of 10 atom% Tb, 23 atom% Dy and 67 atom% Fe. The binder is preferred to be selected from resins based on phenol, urea formaldehyde, melamine formaldehyde, polyester, epoxy and polyimide and have an amount ranging from 10 vol% to 40 vol% of the alloy powder. The powder has an average grain size between 11 and 160um. The shaping step is typically carried out by a press under a non magnetic field.
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公开(公告)号：KR1019990086004A
公开(公告)日：1999-12-15
申请号：KR1019980018771
申请日：1998-05-25
Applicant: 한국과학기술연구원
IPC: H01F1/04
Abstract: 본 발명은 Tb-Dy-Fe 자기변형 합금 복합체(Terfenol-D 복합체)와 그 제조방법에 관한 것으로, 통상의 진공유도 용해법 또는 진공아크 용해법에 의해 Tb, Dy 및 Fe 합금 잉고트를 제조하는 단계, 이 잉고트를 분말로 분쇄하는 단계, 이 분말에 고분자 결합제를 혼합하는 단계, 이 혼합물을 성형하고 경화시키는 단계를 포함하는 제조방법에 의해 Tb-Dy-Fe 자기변형 합금 복합체를 제조함으로써, 간편한 공정과 저렴한 비용으로 복합체를 제조할 수 있고, 제조된 복합체는 사용 주파수를 증가시킬 수 있으며, 자기적 및 기계적으로 우수한 특성을 갖는 것이다.
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公开(公告)号：KR100462791B1
公开(公告)日：2004-12-20
申请号：KR1020010075409
申请日：2001-11-30
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.
Abstract translation: 目的：提供一种用于制造具有能够应用于磁存储器和传感器的保持层的字线的方法，以提供主要由作为磁场保持器的Co构成并具有优异特性的磁层作为阻挡层。 用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102）;在绝缘层（100）中形成沟槽 使用光刻法，在沟槽的内外表面上涂布磁性保持层（106），在其整个表面上沉积由铜（Cu）制成的晶种层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在晶种层顶部上的沟槽（104），并平坦化导电层 110）通过使用化学机械抛光（CMP）方法直到绝缘层的顶表面暴露。
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Patent Agency Ranking
公开(公告)号：KR100452618B1
公开(公告)日：2004-10-15
申请号：KR1020010072201
申请日：2001-11-20
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.
Abstract translation: 目的：提供一种能够应用于传感器的磁存储器和字线制造方法，以实现相对于字线/位线的图案，以最大化转换磁化所需的磁场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 籽晶膜（106）沉积在沟槽的整个表面上。 在籽晶膜上涂覆铜材料的导电膜（108）以充分覆盖沟槽。 执行CMP工艺直到绝缘膜的上表面暴露。
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公开(公告)号：KR1020030044596A
公开(公告)日：2003-06-09
申请号：KR1020010075409
申请日：2001-11-30
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor is provided to supply a magnetic layer mainly constituted of Co serving as a magnetic field keeper and having an excellent characteristics as a barrier layer. CONSTITUTION: A method for manufacturing a wordline having a keeper layer capable of applying to a magnetic memory and a sensor includes the steps of: forming an insulating layer(102) on a semiconductor substrate(100), forming a trench in the insulating layer(102) at a predetermined depth by using photolithography method, coating a magnetic keeper layer(106) on the inner and exterior surface of the trench by using a physical vapor deposition method, depositing seed layer made of copper(Cu) on the entire surface of the magnetic keeper layer(106), depositing a conducting layer(110) made of Cu at a predetermined thickness so as to cover the trench(104) formed on the top of the seed layer by using an electroplating method and planarizing the conducting layer(110) by using a chemical mechanical polishing(CMP) method until the top surface of the insulating layer is exposed.
Abstract translation: 目的：提供一种具有能够施加到磁存储器和传感器的保持层的字线的制造方法，以提供主要由作为磁场保持器的Co构成的磁性层，并且具有优异的阻挡层特性。 构成：用于制造具有能够施加到磁存储器和传感器的保持层的字线的方法包括以下步骤：在半导体衬底（100）上形成绝缘层（102），在绝缘层中形成沟槽 102），通过使用光刻法在预定深度处，通过使用物理气相沉积法在沟槽的内表面和外表面上涂覆磁保持层（106），在铜的整个表面上沉积由铜（Cu）制成的种子层 磁性保持层（106），以预定厚度沉积由Cu制成的导电层（110），以便通过使用电镀方法覆盖形成在种子层顶部上的沟槽（104）并使导电层平坦化（ 110）通过使用化学机械抛光（CMP）方法直到暴露绝缘层的顶表面。
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公开(公告)号：KR100263741B1
公开(公告)日：2000-08-01
申请号：KR1019980002647
申请日：1998-01-31
Applicant: 한국과학기술연구원
Abstract: PURPOSE: Sm-Fe based or Sm-Fe-B based silicon microcantilever having superior magnetic-transformable property even in the low strength of magnetic field is provided to be suitable for the application to a driving material for micro device such as micro valve and micro pump. CONSTITUTION: In the Smx-Fey based silicon microcantilever, x and y are respectively atomic mass percentage satisfying the follow inequalities: 23≤x≤58 and 42 ≤y≤77(x+y=100). Further, in the Smx-Fey-Bz based silicon microcantilever, x, y and z are atomic mass percentage satisfying the follow inequalities: 23≤x≤57.6 and 42≤y≤ 76.3 and 0.4≤z≤0.7(x+y+z=100).
Abstract translation: 目的：即使在低磁场强度下也具有优异的磁变换性能的Sm-Fe系或Sm-Fe-B系硅微型悬臂梁适用于微型阀和微型微型装置的驱动材料 泵。 构成：在基于Smx-Fey的硅微悬臂梁中，x和y分别是满足以下不等式的原子质量百分比：23≤x≤58和42≤y≤77（x + y = 100）。 此外，在Smx-Fey-Bz基硅微悬臂梁中，x，y和z是满足以下不等式的原子质量百分比：23≤x≤57.6和42≤y≤76.3和0.4≤z≤0.7（x + y + z = 100）。
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公开(公告)号：KR100141021B1
公开(公告)日：1998-07-15
申请号：KR1019950032308
申请日：1995-09-28
Applicant: 한국과학기술연구원
IPC: C22C45/02
Abstract: 본 발명은 Tb-Fe 2원계 및 Tb-Fe-B 3원계 자기 변형 합금에 관한 것이다. 본 발명의 자기 변형 합금은 Tb 28.3∼33.3 원자%, Fe 56.7∼66.7 원자% 및 B 0∼15 원자%로 이루어진 모합금을 용해시킨 용탕을 불활성 분위기하에서 10 내지 50m/초의 선속도로 회전하는 냉각 롤 위로 분사시켜 급냉시킴으로써 제조된다. 본 발명에서 제시한 자기 변형 합금은 10nm 크기의 TbFe
2 결정립이 균일하게 분포되어 있는 초미세 결정립 구조를 가지며 낮은 자기장 영역내에서도 우수한 자기 변형 특성을 나타낸다.-
公开(公告)号：KR1019970015773A
公开(公告)日：1997-04-28
申请号：KR1019950032308
申请日：1995-09-28
Applicant: 한국과학기술연구원
IPC: C22C45/02
Abstract: 본 발명은 Tb-Fe 2원계 및 Tb-Fe-B 3원계 가지 변형 합금에 관한 것이다. 본 발명의 가지 변형 합금은 Tb 28.3∼33.3원자%, Fe 56.7∼66.7원자% 및 B 0∼15원자%로 이루어진 모합금을 용해시킨 용탕을 불활성 분위기하에서 10 내지 50m/초의 선속도로 회전하는 냉각롤 위로 분사시켜 급냉시킴으로써 제조된다. 본 발명에서 제시한 가지 변형 합금은 10nm의 크기의 TbFe
2 결정립이 균일하게 분포되어 있는 초미세 결정립구조를 가지며 낮은 자기장 영역내에서도 우수한 가지 변형 특성을 나타낸다.
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