公开(公告)号：KR101762431B1

公开(公告)日：2017-07-28

申请号：KR1020150184020

申请日：2015-12-22

Applicant: 한국과학기술원

Inventor： 조규성 ,  임경택 ,  김형택 ,  조민식 ,  설우석

IPC: H01L31/107 ,  H01L31/0216 ,  G01J1/04 ,  G01J1/44

Abstract: 크로스톡현상을방지할수 있는실리콘광전자증배센서가제공된다. 본발명의일 실시예에따른실리콘광전자증배센서는복수개의가이거모드아발란치포토다이오드(Geiger mode avalanche photodiode; GAPD) 구조체; 상기가이거모드아발란치포토다이오드구조체상의 IC 기판; 및하나의가이거모드아발란치포토다이오드구조체에서발생하는 2차광자가인접한가이거모드아발란치포토다이오드구조체로이동하는것을차단하도록, 상기복수개의가이거모드아발란치포토다이오드구조체각각과상기 IC 기판사이에개재되는차단막;을포함한다.

公开(公告)号：KR101395102B1

公开(公告)日：2014-05-16

申请号：KR1020130015633

申请日：2013-02-14

Applicant: 한국과학기술원

Inventor： 조규성 ,  김형택 ,  배준형 ,  설우석

IPC: H01J43/04 ,  H01J43/28

Abstract: The present invention relates to a method of packaging a silicon photomultiplier using a PCB substrate. The method of packaging a silicon photomultiplier using a PCB substrate according to one embodiment of the present invention includes a step of forming at least one array-type silicon photomultiplier on a PCB substrate; a step of attaching a dam PCB to the edge of the PCB substrate and a step of forming a passivation layer in the upper part of the array-type silicon photomultiplier; and a step of cutting the edge region of the PCB substrate which includes the dam PCB attached to the PCB.

Abstract translation: 本发明涉及使用PCB基板封装硅光电倍增管的方法。 根据本发明的一个实施例的使用PCB基板封装硅光电倍增管的方法包括在PCB基板上形成至少一个阵列型硅光电倍增管的步骤; 将PCB PCB连接到PCB基板的边缘的步骤以及在阵列型硅光电倍增管的上部形成钝化层的步骤; 以及切割PCB基板的边缘区域的步骤，其包括附接到PCB的坝PCB。