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公开(公告)号：KR1020000053680A
公开(公告)日：2000-09-05
申请号：KR1019990035702
申请日：1999-08-26
Applicant: 주성엔지니어링(주) , 한국과학기술원
IPC: H01Q1/27
CPC classification number: H01J37/321 , H05H1/46
Abstract: PURPOSE: An antenna device for generating inductively coupling plasma is provided to resolve the problem of impedance matching due to the increase of the antenna device and increase uniformity of the plasma by selectively increasing or decreasing energy transmitted by a specific antenna by inducing a resonant state in the antenna. CONSTITUTION: An antenna device(100) is supplied with power via an impedance matching circuit(304) connected to a high frequency power supply(102) and includes a plurality of antenna units connected each other in parallel. The respective antenna unit includes first and second variable loads(302a,302b) and first and second single winding or multiple winding antennas(300a,300b). The first variable load is connected to the first antenna in serial in a first antenna unit and the second variable load is connected to the second antenna in serial in a second antenna unit. The second antenna unit maintains a resonant state between the first antenna unit.
Abstract translation: 目的：提供一种用于产生电感耦合等离子体的天线装置，以解决由于天线装置的增加引起的阻抗匹配问题，并通过选择性地增加或减少由特定天线发射的能量来提高等离子体的均匀性， 天线。 构成：通过连接到高频电源（102）的阻抗匹配电路（304）向天线装置（100）供电，并且包括并联连接的多个天线单元。 各个天线单元包括第一和第二可变负载（302a，302b）和第一和第二单绕组或多个绕组天线（300a，300b）。 第一可变负载在第一天线单元中串联连接到第一天线，并且第二可变负载在第二天线单元中串联连接到第二天线。 第二天线单元保持第一天线单元之间的谐振状态。
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公开(公告)号：KR1020170126578A
公开(公告)日：2017-11-20
申请号：KR1020160056764
申请日：2016-05-10
Applicant: 한국과학기술원
CPC classification number: H01L21/3065 , H01J37/3233 , H01J37/32357 , H01J37/32422 , H01L21/02032 , H01L21/67017 , H01L2221/683 , H01J37/32091 , H01J37/32082 , H01J37/32165 , H01J37/32541 , H05H1/46 , H05H2001/4675 , H05H2001/4682
Abstract: 본발명은플라즈마처리장치를제공한다. 이플라즈마처리장치는제1 압력을가지는전자방출영역과상기제1 압력보다높은압력으로유지되고플라즈마가생성되고기판이배치되는처리영역을구비한진공용기; 상기전자방출영역에배치되고열전자를방출하는열전자방출수단; 접지되고상기열전자방출수단에서방출된전자를상기처리영역으로추출하는그리드전극; 상기진공용기의하부에배치되고상기처리영역에배치되고상기기판을장착하는기판홀더; 상기기판홀더에 RF 전력을인가하여플라즈마를발생시키는 RF 전원; 상기전자방출영역과연결되는제1 진공펌프; 및상기처리영역에연결되는제2 진공펌프를포함한다.
Abstract translation: 本发明提供一种等离子体处理装置。 该等离子体处理装置包括：真空容器，其具有具有第一压力的电子发射区域和产生等离子体的处理区域，并且基板被设置，所述真空室被保持在高于所述第一压力的压力下; 设置在电子发射区内并发射热电子的热电子发射装置; 栅极接地并将从热电子发射装置发射的电子提取到处理区域中; 基板支架，其配置在所述真空容器的下部，配置在所述处理区域内，且安装所述基板; 通过向衬底支架施加RF功率来产生等离子体的RF功率源; 连接到电子发射区域的第一真空泵; 和连接到处理区域的第二真空泵。
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公开(公告)号：KR101774809B1
公开(公告)日：2017-09-19
申请号：KR1020130056156
申请日：2013-05-20
Applicant: 한국과학기술원
IPC: H05H1/46 , H01L21/205
Abstract: 본발명은플라즈마발생장치및 기판처리장치를제공한다. 이플라즈마발생장치는일면의중심에제1 주파수의제1 RF 전력을공급받는원판형의제1 전극, 일면의복수의위치에서제2 주파수의제2 RF 전력을공급받고제1 전극의주위에배치된와셔형상의제2 전극, 제1 전극과제2 전극사이에배치된와셔형상의절연스페이서, 제1 전극에전력을공급하는제1 RF 전원, 제2 전극에전력을공급하는제2 RF 전원, 및제1 RF 전원의전력및 제2 RF 전원의전력을조절하는제어부를포함한다.
Abstract translation: 本发明提供一种等离子体产生装置和基板处理装置。 等离子体发生器包括盘状的第一电极和第二电极，所述盘状的第一电极在一个表面的中心处被提供有第一频率的第一RF功率，在第一表面的多个位置处被提供有第二频率的第二RF功率， 用于向第一电极供电的第一RF电源，用于向第二电极供电的第二RF电源，用于向第一电极供电的第二RF电源， 以及用于控制RF功率源的功率和第二RF功率源的功率的控制单元。
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公开(公告)号：KR1020130085590A
公开(公告)日：2013-07-30
申请号：KR1020120006458
申请日：2012-01-20
Applicant: 한국과학기술원
IPC: H05H1/46 , H01L21/3065
CPC classification number: H01J37/32541 , H01J37/32082 , H01J37/32091 , H01J37/32165 , H05H1/46 , H05H2001/4675 , H05H2001/4682
Abstract: PURPOSE: A plasma generator and a substrate processing apparatus are provided to process a large sized semiconductor substrate uniformly using plasma. CONSTITUTION: A plasma generator comprises a first electrode (112), a second electrode (114), an insulation spacer (116), a first RF power source (122), and a second RF power source (132). The first electrode has a disc shape and receives a first RF power of a first frequency for forming plasma. The second electrode is arranged around the first electrode, has a washer shape, and is supplied with a second RF power of a second frequency. The insulation spacer is disposed between the first electrode and the second electrode. The first RF power source supplies power to the first electrode. The second RF power source supplies power to the second electrode.
Abstract translation: 目的：提供等离子体发生器和基板处理装置，以使用等离子体均匀地处理大尺寸半导体基板。 构成：等离子体发生器包括第一电极（112），第二电极（114），绝缘间隔物（116），第一RF电源（122）和第二RF电源（132）。 第一电极具有盘形并且接收用于形成等离子体的第一频率的第一RF功率。 第二电极围绕第一电极布置，具有垫圈形状，并且被提供有第二频率的第二RF电力。 绝缘间隔件设置在第一电极和第二电极之间。 第一RF电源向第一电极供电。 第二RF电源向第二电极供电。
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公开(公告)号：KR1020130051784A
公开(公告)日：2013-05-21
申请号：KR1020110117128
申请日：2011-11-10
Applicant: 한국과학기술원
CPC classification number: H01J37/32183 , H01J37/32091 , H01J37/32458 , H01J37/32541 , H01J37/32715 , H01J37/32825 , H05H1/46 , H05H2001/4675 , H05H2001/4682
Abstract: PURPOSE: An electrode structure for capacitive-coupled plasma and a substrate processing apparatus including the same are provided to improve regularity of capacitive-coupled plasma of a rectangular electrode. CONSTITUTION: A substrate processing apparatus includes a vacuum tank(120), a substrate holder(202), and a rectangular electrode(210). The vacuum tank includes an exhausting unit in a rectangular container shape. The substrate holder is arranged inside of the vacuum tank. The rectangular electrode includes at least four trenches(211), is supplied with electricity from a RF power source(206) through an impedance matching network(208), and forms capacitive-coupled plasma inside of the vacuum tank. The trenches have a fixed inner radius or outer radius and are separated from each other in the diagonal direction of the rectangular electrode.
Abstract translation: 目的：提供一种用于电容耦合等离子体的电极结构和包括其的基板处理装置，以改善矩形电极的电容耦合等离子体的规格性。 构成：基板处理装置包括真空槽（120），基板保持架（202）和矩形电极（210）。 真空槽包括矩形容器形状的排气单元。 衬底保持器布置在真空罐的内部。 矩形电极包括至少四个沟槽（211），其通过阻抗匹配网络（208）从RF电源（206）供电，并在真空容器内形成电容耦合等离子体。 沟槽具有固定的内半径或外半径，并且在矩形电极的对角线方向上彼此分离。
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Patent Agency Ranking
公开(公告)号：KR101196309B1
公开(公告)日：2012-11-06
申请号：KR1020110047538
申请日：2011-05-19
Applicant: 한국과학기술원
CPC classification number: H05H1/24 , H01J37/321 , H01J37/32174 , H05H1/46 , H05H2001/4667 , H05H2001/4682
Abstract: PURPOSE: A plasma generation apparatus is provided to uniformly generate inductively coupled plasma by equally distributing power to all RF coils which are connected in parallel. CONSTITUTION: A RF power source distributes power to 16 RF coils connected in parallel through a power dividing part(442). The power dividing part includes a power distribution line and a conductive outer cover(443) which surrounds the power distribution line. The power dividing part has a coaxial cable shape. One ends of the RF coils are connected to the power distribution line through a first connection means(444a). The other ends of the RF coils are connected to the conductive outer cover through a second connection means(444b).
Abstract translation: 目的：提供等离子体产生装置，通过对并联连接的所有RF线圈均等分配电力来均匀地产生电感耦合等离子体。 规定：RF电源通过功率分配部分（442）将功率分配到并联的16个RF线圈。 功率分配部分包括配电线路和围绕配电线路的导电外壳体（443）。 功率分配部分具有同轴电缆形状。 RF线圈的一端通过第一连接装置（444a）连接到配电线路。 RF线圈的另一端通过第二连接装置（444b）连接到导电外盖。
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公开(公告)号：KR101180373B1
公开(公告)日：2012-09-10
申请号：KR1020110028765
申请日：2011-03-30
Applicant: 한국과학기술원 , 주성엔지니어링(주)
IPC: H05H1/34 , H05H1/46 , H01L21/205
CPC classification number: H01J37/32568 , H01J37/32091 , H01J37/32174 , H01J37/32449 , H01J37/32458 , H01J37/32541 , H01J37/32825 , H05H1/46 , H05H2001/4675 , H05H2001/4682
Abstract: PURPOSE: A plasma generation apparatus and a substrate processing apparatus are provided to reduce lattice defects density of a substrate caused by plasma impacts by maintaining the substrate in a floating state. CONSTITUTION: A plasma generation apparatus comprises a plurality of ground electrodes(120) which is arranged inside a vacuum container(102) and extended in parallel and one or more power electrodes(110) which is arranged between the ground electrodes. A discharge region with a predetermined interval between the power electrode and the ground electrode is included. The power electrode is tapered in a direction facing a substrate. The power electrode is connected to RF power(170). The vacuum container can have pressure below atmospheric pressure. The vacuum container can include an upper plate(104).
Abstract translation: 目的：提供一种等离子体产生装置和衬底处理装置，以通过将衬底维持在浮动状态来减少由等离子体冲击引起的衬底的晶格缺陷密度。 构成：等离子体产生装置包括布置在真空容器（102）内并且平行延伸的多个接地电极（120）和设置在接地电极之间的一个或多个电力电极（110）。 包括在功率电极和接地电极之间具有预定间隔的放电区域。 功率电极在面向衬底的方向上是锥形的。 电源电极连接到RF电源（170）。 真空容器可以具有低于大气压的压力。 真空容器可以包括上板（104）。
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公开(公告)号：KR101101176B1
公开(公告)日：2012-01-02
申请号：KR1020110020169
申请日：2011-03-08
Applicant: 한국과학기술원
IPC: H01L21/205 , H01L21/3065 , H01L21/02
Abstract: 본 발명은 유체 분배 장치 및 유체 분배 방법을 제공한다. 이 방법은 예비 단위 영역들을 포함하는 예비 유체 분배부를 이용하여 기판의 최적 공정 위치를 선택하고, 및 기판의 최적 공정 위치에 대응하는 예비 유체 분배부의 구조를 전사하여 유체 분배부를 제공하는 것을 포함한다. 예비 단위 영역들 각각은 위치에 따라 서로 다른 유량을 공급하는 스플릿 영역들을 포함한다.
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公开(公告)号：KR101094644B1
公开(公告)日：2011-12-20
申请号：KR1020090085700
申请日：2009-09-11
Applicant: 한국과학기술원
IPC: H01L21/3065
Abstract: 본 발명에 따르면, 일면에 플라즈마가 생성되는 복수의 내측홈이 형성된 할로우 캐소드(Hollow cathode), 원뿔 또는 원뿔대 형상을 하고 내측홈에 고정 배치되는 복수의 니들(Needle); 및 할로우 캐소드에 전기적으로 연결되는 전력공급원을 포함하는 플라즈마 발생장치 및 기판 처리장치가 제공된다. 이러한 본 발명에 따르면, 할로우 캐소드 및 할로우 캐소드의 내측홈에 배치된 니들에 의해 할로우 캐소드 효과와 전자 방출 효과가 증대되므로 고밀도의 플라즈마를 제공할 수 있다.
플라즈마, 할로우 캐소드, 니들, 전극, 전력공급원-
公开(公告)号：KR1020110095566A
公开(公告)日：2011-08-25
申请号：KR1020100015105
申请日：2010-02-19
Applicant: 한국과학기술원
IPC: H01L21/3065 , H01L21/205 , H01L21/265
CPC classification number: H01J37/32596
Abstract: PURPOSE: An electrode structure, a process method using the same, and a process correcting method are provided to supply hole density information for the optimum process by using a hallow cathode discharge with different density according to a position. CONSTITUTION: The shape of a hole is selected by using a preliminary electrode structure with different hole density according to a position(S100). The optimum process position is selected by using a measurement electrode structure with different hole diameters according to the position(S200). A process electrode structure is provided by transferring the diameter of the hole of the measurement electrode structure corresponding to the optimum process position(S300). A process non-uniformity is corrected according to the position by using a process electrode structure(S400).
Abstract translation: 目的：提供电极结构，使用其的处理方法和处理校正方法，以根据位置通过使用具有不同密度的中性阴极放电来提供用于最佳工艺的空穴密度信息。 构成：通过使用根据位置具有不同孔密度的预备电极结构来选择孔的形状（S100）。 通过使用根据位置具有不同孔径的测量电极结构来选择最佳工艺位置（S200）。 通过传送与最佳处理位置对应的测量电极结构的孔的直径来提供处理电极结构（S300）。 通过使用处理电极结构根据位置校正工艺不均匀性（S400）。
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