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公开(公告)号：KR1019950006965B1
公开(公告)日：1995-06-26
申请号：KR1019910016478
申请日：1991-09-20
IPC: H01L21/20
Abstract: The method grows the zinc phosphite epitaxial layer of single crystal on the semiconductor substrate of indium phosphite which is photoelectric materials. The method has the steps of growing the single crystalline film of indium galium arsenic phosphite, and forming epitaxial film of zinc phosphite by diffusion of zinc through junction between substrate and thin film during heating under zinc phosphite atmosphere. It grows to thick single crystal, out of which solar battery with high efficiency can be manufactured.
Abstract translation: 该方法在作为光电材料的铟亚磷酸盐的半导体衬底上生长单晶的亚磷酸锌外延层。 该方法具有以下步骤：生长铟镓砷亚磷酸盐的单晶膜，并且在亚磷酸锌气氛加热期间通过锌在基底和薄膜之间的连接扩散形成亚磷酸锌的外延膜。 它生长成厚单晶，其中可以制造高效率的太阳能电池。
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公开(公告)号：KR1019950002181B1
公开(公告)日：1995-03-14
申请号：KR1019910007293
申请日：1991-05-06
Applicant: 한국전자통신연구원
IPC: H01L21/26
Abstract: The method includes the steps of depositing a thin fluoride film (2) on a semiconductor substrate (1), irradiating electron beams to the gate or metal wiring formation region on the fluoride film (2), forming a thin metal film (3) for gate or wirings on the electron beam irradiated region, and depositing a passivation film (4) of fluoride, SiO2, Si3N4 or Al2O3 thereon, thereby metallic materials being obtained from the fluoride film to simplify the photolithographic process. The residual fluoride materials act as an insulator for preventing the electric leakage between the metallic circuits.
Abstract translation: 该方法包括以下步骤：在半导体衬底（1）上沉积氟化薄膜（2），向氟化膜（2）上的栅极或金属布线形成区域照射电子束，形成薄金属膜（3） 电子束照射区域的栅极或配线，以及在其上沉积氟化物，SiO 2，Si 3 N 4或Al 2 O 3的钝化膜（4），由此从氟化物膜获得金属材料以简化光刻工艺。 剩余的氟化物材料用作防止金属电路之间漏电的绝缘体。
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公开(公告)号：KR1019940007072B1
公开(公告)日：1994-08-04
申请号：KR1019910010394
申请日：1991-06-22
Applicant: 한국전자통신연구원
IPC: H01L21/3205
Abstract: The method includes the steps of forming a fluoride thin film 9 on a substrate 1 on which a first and second interconnection line 2 and 3 are formed, selectively irradiating electron beam into a portion of the fluoride thin film, in which vertical connection is required, to form a metal thin film 10 in a super vacuum ambient, wherein the metal thin film 10 is used as the vertical connection portion which connects first and second interconnection layer to each other, the portion of the fluoride thin film 9, in which electron beam is not irradiated, is used as an insulating layer which insulates first and second interconnection layer from each other.
Abstract translation: 该方法包括在其上形成有第一和第二互连线2和3的基板1上形成氟化物薄膜9的步骤，选择性地将电子束照射到需要垂直连接的氟化物薄膜的一部分中， 在超真空环境中形成金属薄膜10，其中金属薄膜10用作将第一和第二互连层彼此连接的垂直连接部分，即氟化物薄膜9的部分，其中电子束 不被照射，被用作使第一和第二互连层彼此绝缘的绝缘层。
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公开(公告)号：KR1019940001501B1
公开(公告)日：1994-02-23
申请号：KR1019910002545
申请日：1991-02-13
Applicant: 한국전자통신연구원
IPC: H01L21/02
Abstract: The method for bonding same or different semiconductors comprises the steps of: (a) growing a protection layer on a first and a second semiconductor; (b) depositing a positive ion type metal thin film of a bonding chemical semiconductor on the protection layer of the first semiconductor, but a negative one on the protection layer of the second one; (c) placing the second semiconductor upside down over the first semiconductor; and (d) heating the laminated semiconductor at which the temperature is higher than the positive ion type metal thin film, but lower than the negative one so that the chemical semiconductor is formed by the reaction between the solid state having negative ion and the liquid state having positive ion.
Abstract translation: 用于接合相同或不同半导体的方法包括以下步骤：（a）在第一和第二半导体上生长保护层; （b）在第一半导体的保护层上沉积接合化学半导体的正离子型金属薄膜，而在第二半导电体的保护层上沉积负极离子型金属薄膜; （c）将所述第二半导体倒置在所述第一半导体上; 和（d）加热温度高于正离子型金属薄膜但低于负极的层压半导体，使得通过具有负离子的固态与液体状态之间的反应形成化学半导体 具有正离子。
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公开(公告)号：KR1019930001393A
公开(公告)日：1993-01-16
申请号：KR1019910010394
申请日：1991-06-22
Applicant: 한국전자통신연구원
IPC: H01L21/3205
Abstract: 내용 없음
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Patent Agency Ranking
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公开(公告)号：KR100273134B1
公开(公告)日：2001-01-15
申请号：KR1019970064813
申请日：1997-11-29
Applicant: 한국전자통신연구원
IPC: H01S5/30
CPC classification number: H01S5/18388 , H01S5/0425 , H01S5/18308 , H01S5/205 , H01S2301/166 , H01S2301/176
Abstract: PURPOSE: A single mode surface emission laser and a manufacturing method thereof are provided, which is stably applied to a coupling with an optical fiber and an optical wiring in a free space by enabling a single transverse mode oscillation in a large area and a large size of a device. CONSTITUTION: A single mode surface emission laser comprises an n-type semiconductor substrate(11), a laser column formed on the n-type semiconductor substrate, a regulating layer(18) formed on the laser column, an anti-induction clad layer(17) formed surrounding the laser column and the regulating layer, and an upper electrode on the anti-induction clad layer and the regulating layer. An n-type lower electrode(12) and an anti-reflection layer(13) are formed below the n-type semiconductor substrate. The laser column includes a lower mirror layer(14), an active layer(15), and an upper mirror layer(16) stacked in that order. The thickness of the regulating layer is made thinner as it goes from the center to the periphery. The anti-induction clad layer is made from a material having a refractive index greater than that of the active layer or the upper mirror layer in the laser column. An insulating layer(19) is formed between the anti-induction clad layer and the upper electrode.
Abstract translation: 目的：提供一种单模面发射激光器及其制造方法，其通过在大面积和大尺寸中实现单横模振荡而稳定地应用于在自由空间中与光纤和光布线的耦合 的设备。 构成：单模面发射激光器包括n型半导体衬底（11），形成在n型半导体衬底上的激光器柱，形成在激光柱上的调节层（18），抗感应覆层（ 17）围绕激光柱和调节层，以及上电极在抗感应覆层和调节层上。 在n型半导体衬底的下方形成n型下电极（12）和抗反射层（13）。 激光柱包括依次层叠的下镜层（14），有源层（15）和上镜层（16）。 调节层的厚度从中心到周边变薄。 抗感应覆层由折射率大于激光塔中活性层或上镜层的折射率的材料制成。 在抗感应覆层和上电极之间形成绝缘层（19）。
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公开(公告)号：KR100204569B1
公开(公告)日：1999-06-15
申请号：KR1019960035935
申请日：1996-08-28
Applicant: 한국전자통신연구원
IPC: H01S3/00
CPC classification number: H01S5/18355 , H01S5/0425 , H01S5/18352 , H01S5/2086 , H01S5/3202 , H01S5/423 , H01S2301/176
Abstract: 본 발명은 편광 제어된 표면 방출 레이저 어레이의 구조 및 그 제조 방법에 관한 것으로, 편광을 제어할 수 있도록 공진기가 110 방향과
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公开(公告)号：KR100170192B1
公开(公告)日：1999-03-30
申请号：KR1019950051484
申请日：1995-12-18
Applicant: 한국전자통신연구원
IPC: H01L21/027
Abstract: 본 발명은 광투과 기판을 사용한 병렬 광논리처리 시스템의 구조에 관한 것으로서, 빛을 발진하는 광투과형 표면 방출 레이저가 어레이로 배열된 레이저 어레이 기판과, 상기 레이저 어레이에서 발진된 빛이 평행해지도록 빛을 접속하는 마이크로 렌즈가 어레이로 배열된 마이크로 렌즈 어레이 기판과, 상기 마이크로 렌즈 어레이 기판을 투과한 빛을 논리 회로의 창문으로 투과시켜 데이터를 읽어 논리 기능을 수행하는 광논리 소자 어레이로 이루어진 다수 개의 단위 칩으로 이루어져 빛이 직선적으로 상기 각 기판을 투과하면서 논리를 수행하는 것을 특징으로 한다.
따라서, 빛이 각 기판을 통해 직선적으로 투과되면서 진행되므로 빛의 경로를 최단 거리로 할 수 있으며, 빛이 레이저 어레이 기판을 투과하므로 투과 면적이 증가되어 단위 칩 사이의 빛의 진행 경로를 맞추기 위한 정렬이 용이하다.
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