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公开(公告)号：KR101287196B1
公开(公告)日：2013-07-16
申请号：KR1020090119308
申请日：2009-12-03
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12004 , G02B2006/12176 , G02B2006/12188 , H01L31/105 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
Abstract: 광 검출기의 제조방법 및 이에 의해 형성된 광 검출기를 제공한다. 이 광 검출기의 제조방법은, 제1 단결정 반도체층 및 제1 단결정 반도체층으로부터 돌출된 광 도파로를 형성하는 것, 제1 단결정 반도체층 상에 광 도파로를 덮는 절연막을 형성하는 것, 절연막을 식각하여 광 도파로의 상부면을 노출시키는 오프닝을 형성하는 것, 노출된 광 도파로의 상부면으로부터 제2 단결정 반도체층을 형성하는 것, 제2 단결정 반도체층의 상부면으로부터 도펀트들로 도핑된 다결정 반도체층을 선택적으로 형성하는 것을 포함할 수 있다.
광 검출기, 광 도파로, 선택적 성장-
公开(公告)号：KR1020130063767A
公开(公告)日：2013-06-17
申请号：KR1020110130309
申请日：2011-12-07
Applicant: 한국전자통신연구원
IPC: H01L27/146
CPC classification number: H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
Abstract: PURPOSE: A method for forming photodetectors is provided to simplify a manufacturing process by forming an optical waveguide, a first single crystal pattern, and a second single crystal pattern at the same time. CONSTITUTION: A buried insulating layer(110) and a semiconductor layer are formed on a substrate(100). A trench is formed in the semiconductor layer. A doping region(123) is formed in a part of the semiconductor layer. A first single crystal layer and a second single crystal layer are formed in the trench. The first single crystal layer, the second single crystal layer, and the semiconductor layer are patterned to form a first single crystal pattern(145), a second single crystal pattern(155), and an optical waveguide(125).
Abstract translation: 目的：提供一种用于形成光电检测器的方法，以通过同时形成光波导，第一单晶图案和第二单晶图案来简化制造过程。 构成：在基板（100）上形成掩埋绝缘层（110）和半导体层。 在半导体层中形成沟槽。 掺杂区域（123）形成在半导体层的一部分中。 在沟槽中形成第一单晶层和第二单晶层。 将第一单晶层，第二单晶层和半导体层图案化以形成第一单晶图案（145），第二单晶图案（155）和光波导（125）。
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公开(公告)号：KR1020110062547A
公开(公告)日：2011-06-10
申请号：KR1020090119308
申请日：2009-12-03
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12004 , G02B2006/12176 , G02B2006/12188 , H01L31/105 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
Abstract: PURPOSE: An optical detector and a manufacturing method thereof are provided to simplify the process of forming a polycrystalline semiconductor layer, by growing the polycrystalline semiconductor layer from a single-crystalline semiconductor layer selectively. CONSTITUTION: A first single-crystalline semiconductor layer(121) and an optical waveguide(123) are formed. The optical waveguide is projected from the first single-crystalline semiconductor layer. An insulation layer(130,140) is formed on the first single-crystalline semiconductor layer. The insulation layer covers the optical waveguide. An opening(131) is formed by etching the insulation layer. The opening reveals the top surface of the optical waveguide. A second single-crystalline semiconductor layer(132) is formed in the opening. A polycrystalline semiconductor layer(133) doped with dopants is selectively formed, from the top surface of the second single-crystalline semiconductor layer.
Abstract translation: 目的：通过选择性地从单晶半导体层生长多晶半导体层，提供光学检测器及其制造方法，以简化形成多晶半导体层的工艺。 构成：形成第一单晶半导体层（121）和光波导（123）。 光波导从第一单晶半导体层突出。 在第一单晶半导体层上形成绝缘层（130,140）。 绝缘层覆盖光波导。 通过蚀刻绝缘层形成开口（131）。 开口显示光波导的顶表面。 在开口中形成第二单晶半导体层（132）。 从第二单晶半导体层的顶表面选择性地形成掺杂有掺杂剂的多晶半导体层（133）。
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公开(公告)号：KR1020100063607A
公开(公告)日：2010-06-11
申请号：KR1020090025685
申请日：2009-03-26
Applicant: 한국전자통신연구원
IPC: C30B25/02 , C30B29/08 , H01L21/205 , H01L31/10
Abstract: PURPOSE: A growth method of a germanium single crystal thin film having a negative photoconductive property and an optical detector using the same are provided to improve a penetration dislocation density and a surface roughness by forming the germanium single crystal thin film of a high grade on a silicon substrate. CONSTITUTION: A germanium thin film is grown up(S11) on the silicon substrate in a low temperature. The germanium thin film is grown up by increasing temperature(S12). The germanium thin film is grown up(S13) in the high temperature. Each growth step is processed using a low pressure chemical vapor deposition. The deposition rate at the increasing temperature germanium growth is similar to the deposition rate at the low temperature germanium growth.
Abstract translation: 目的：提供具有负光导性的锗单晶薄膜和使用其的光学检测器的生长方法，以通过在高温下形成高等级的锗单晶薄膜来提高穿透位错密度和表面粗糙度 硅衬底。 构成：在低温下在硅衬底上长大（S11）锗薄膜。 锗薄膜通过增加温度而长大（S12）。 锗薄膜在高温下长大（S13）。 使用低压化学气相沉积处理每个生长步骤。 在增加温度锗生长时的沉积速率与低温锗生长时的沉积速度相似。
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公开(公告)号：KR101923730B1
公开(公告)日：2018-11-30
申请号：KR1020120114259
申请日：2012-10-15
Applicant: 한국전자통신연구원
IPC: H01S5/02
CPC classification number: H01S5/3031 , G02B6/12004 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/3223 , Y10S438/933
Abstract: 반도체레이저및 그제조방법이제공된다. 반도체레이저의제조방법은, 매립산화층을포함하는기판을제공하는것; 상기매립산화층을식각하여상기기판을노출하는개구부를가지는패턴들을형성하는것; 상기개구부내에게르마늄단결정막을형성하는것; 및상기기판상에상기게르마늄단결정막에인접하는광 결합기를형성하는것을포함한다.
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Patent Agency Ranking
公开(公告)号：KR1020160107401A
公开(公告)日：2016-09-19
申请号：KR1020150029818
申请日：2015-03-03
Applicant: 한국전자통신연구원
CPC classification number: G02B6/423 , G02B6/3644 , G02B6/4239 , G02B6/4249 , G02B7/004 , G02B6/4233
Abstract: 본발명의실시예들에따른광 결합장치는제1 블록부및 상기제1 블록부의일 측면에접하는제2 블록부를포함하는광 섬유블록; 상기광 섬유블록을관통하며, 상기광 섬유블록의하면에서일 끝면(an end surface thereof)이노출되는광 섬유; 상기광 섬유블록하에배치되며, 상면에상기광 섬유의상기일 끝면과대응되도록배치된광 입출력소자를갖는반도체칩; 및상기반도체칩 상에배치되며, 리세스영역을갖는평탄화층을포함하되, 상기반도체칩의하면을기준으로상기제1 블록부의하면은상기제2 블록부의하면보다높은레벨을가지며, 상기제2 블록부의상기하면은상기리세스영역의바닥면과접하며, 상기광 섬유는상기광 입출력소자와광 결합될수 있다.
Abstract translation: 根据本发明的实施例，光耦合装置包括：光纤块，包括与第一块单元的一侧接触的第一块单元和第二块单元; 光纤穿透光纤块，其端面暴露在光纤块的下表面上; 半导体芯片，其布置在所述光纤块的下方，并具有布置成对应于所述光纤的端面的光学输入/输出元件; 以及布置在半导体芯片上并具有凹陷区域的平坦化层。 基于半导体芯片的下表面，第一块单元的下表面具有比第二块单元的下表面更高的电平。 第二块单元的下表面与凹部的底面接触。 光纤可以光耦合到光输入/输出元件。
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公开(公告)号：KR1020160092565A
公开(公告)日：2016-08-05
申请号：KR1020150012809
申请日：2015-01-27
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12016 , G02B6/1228 , G02B6/14 , G02B6/12019
Abstract: 본발명은평탄한모드발생장치를제공한다. 평탄한모드발생장치는입력도파로, 상기입력도파로와연결되는이중테이퍼구조및 상기이중테이퍼구조와연결되는입력스타커플러를포함하고, 상기이중테이퍼구조는상기입력도파로및 상기입력스타커플러와동일한제 1 높이를갖는제 1 부분및 평면적으로보아, 상기제 1 부분내에형성되며, 상기제 1 높이보다낮은제 2 높이를갖고상기입력스타커플러에서상기입력도파로를향하는방향으로테이퍼진제 2 부분을포함한다.
Abstract translation: 本发明提供能够输出平顶模式的平板模式控制器。 平面模式控制器包括输入波导，连接到输入波导的双锥形结构和连接到双锥形结构的输入星形耦合器。 双锥形结构包括第一部分，其具有与输入波导和输入星形耦合器的高度相同的第一高度，并且从平面看，形成在第一部分中的第二部分具有低于 第一高度，并从输入星形耦合器到输入波导变细。
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公开(公告)号：KR1020160089927A
公开(公告)日：2016-07-29
申请号：KR1020150009304
申请日：2015-01-20
Applicant: 한국전자통신연구원
CPC classification number: H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521 , H01L31/02027 , H01L31/18
Abstract: 본발명은광수신소자에관한것이다. 본발명의실시예에따르면, 기판, 상기기판의상부의제1 도핑영역, 상기기판내에제공되고, 상기제1 도핑영역을둘러싸고상기제1 도핑영역의측면과옆으로이격된링 구조의제2 도핑영역, 상기제1 도핑영역상의광 흡수층, 상기광 흡수층상의컨택층, 상기컨택층상의제1 전극, 및상기제2 도핑영역상의제2 전극을포함하는광 수신소자가제공될수 있다.
Abstract translation: 本发明涉及一种光接收装置。 根据本发明的实施例，提供了一种光接收装置，其包括：基板; 在所述基板的上部的第一掺杂区域; 设置在所述衬底中的环结构的第二掺杂区域，被配置为围绕所述第一掺杂区域并且与所述第一掺杂区域的侧表面横向分离; 在第一掺杂区域上的光吸收层; 光吸收层上的接触层; 接触层上的第一电极; 和第二掺杂区上的第二电极。
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公开(公告)号：KR1020140079540A
公开(公告)日：2014-06-27
申请号：KR1020120146842
申请日：2012-12-14
Applicant: 한국전자통신연구원
CPC classification number: G02B6/4249 , G02B6/4204 , G02B6/4214
Abstract: An optical receiver module according to the present invention comprises: a demultiplexer for separating a plurality of multiplexed optical signals into respective optical signals; an optical device including a right-angled mirror reflecting individual optical signals transmitted from the demultiplexer, in a perpendicular direction, and a plurality of lenses receiving the reflected optical signals; and a plurality of photodetectors which is spaced apart from the plurality of lenses by a predetermined distance, and converts the individual optical signals into electrical signals. The optical device and the demultiplexer are formed into a combined structure. The distance between the lenses is equal to the distance between the photodetectors.
Abstract translation: 根据本发明的光接收机模块包括：解复用器，用于将多个复用的光信号分离成各自的光信号; 光学装置，其包括反射从多路分解器在垂直方向发送的各个光信号的直角镜和接收反射光信号的多个透镜; 以及与多个透镜间隔开预定距离的多个光电检测器，并将各个光信号转换为电信号。 光学器件和解复用器形成为组合结构。 透镜之间的距离等于光电检测器之间的距离。
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公开(公告)号：KR1020140048463A
公开(公告)日：2014-04-24
申请号：KR1020120114259
申请日：2012-10-15
Applicant: 한국전자통신연구원
IPC: H01S5/02
CPC classification number: H01S5/3031 , G02B6/12004 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/3223 , Y10S438/933
Abstract: A semiconductor laser and a method of manufacturing the same are provided. A method of manufacturing a semiconductor laser includes providing a substrate which includes a burying oxide layer; forming patterns having an opening part which exposes the substrate by etching the burying oxide layer; forming a Ge single crystal layer in the opening part; and forming an optical coupler which is adjacent to the Ge single crystal layer on the substrate.
Abstract translation: 提供半导体激光器及其制造方法。 制造半导体激光器的方法包括提供包括掩埋氧化物层的衬底; 形成具有通过蚀刻所述掩埋氧化物层而露出所述基板的开口部的图案; 在开口部分形成Ge单晶层; 以及形成与基板上的Ge单晶层相邻的光耦合器。
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