반도체 레이저 및 그 제조방법
    2.
    发明公开
    반도체 레이저 및 그 제조방법 审中-实审
    一种半导体激光器及其形成方法

    公开(公告)号:KR1020150062231A

    公开(公告)日:2015-06-08

    申请号:KR1020130146375

    申请日:2013-11-28

    Abstract: 반도체레이저의제조방법이제공된다. 반도체레이저의제조방법은, 제1 영역및 제2 영역을포함하는반도체기판을제공하는것, 상기반도체기판의상기제2 영역에선택적에피택시얼성장공정을이용하여실리콘단결정막을형성하는것, 상기실리콘단결정막을이용하여광 결합기를형성하는것, 및상기반도체기판의상기제1 영역에선택적에피택시얼성장공정을이용하여게르마늄단결정막을포함하는레이저코어구조체를형성하는것을포함한다.

    Abstract translation: 提供半导体激光器制造方法。 半导体激光器制造方法包括:提供具有第一区域和第二区域的半导体衬底的步骤; 通过使用选择性外延生长工艺在半导体衬底的第二区域上形成硅单晶层的步骤; 通过使用硅单晶层形成光电耦合器的步骤; 以及通过使用选择性外延生长工艺在半导体衬底的第一区域上形成具有锗单晶层的激光芯结构的步骤。

    광 검출 소자 및 이를 제조하는 방법
    4.
    发明公开
    광 검출 소자 및 이를 제조하는 방법 有权
    用于检测光的装置及其制造方法

    公开(公告)号:KR1020120055251A

    公开(公告)日:2012-05-31

    申请号:KR1020100116877

    申请日:2010-11-23

    CPC classification number: H01L31/102 H01L31/18 H01L31/0224 H01L31/028

    Abstract: PURPOSE: A light detection device and a manufacturing method thereof are provided to simplify manufacturing processes by forming a self-aligned light absorption layer and a first conductive pattern without an additional pattern. CONSTITUTION: An insulating pattern(106) includes a groove which exposes a part of a first conductive pattern(102). A light absorption layer(110) fills the groove of the insulating pattern. The light absorption layer has an upper surface which is arranged higher than the upper surface of the insulating pattern. A second conductive pattern(112) is arranged on the light absorption layer. Connection terminals(116) is respectively and electrically connected to the first conductive pattern and the second conductive pattern.

    Abstract translation: 目的:提供光检测装置及其制造方法,以通过形成自对准的光吸收层和第一导电图案来简化制造工艺,而不需要额外的图案。 构成:绝缘图案(106)包括暴露第一导电图案(102)的一部分的凹槽。 光吸收层(110)填充绝缘图案的凹槽。 光吸收层具有比绝缘图案的上表面高的上表面。 第二导电图案(112)布置在光吸收层上。 连接端子(116)分别电连接到第一导电图案和第二导电图案。

    광 결합 장치
    6.
    发明公开
    광 결합 장치 审中-实审
    光耦合器件

    公开(公告)号:KR1020160107401A

    公开(公告)日:2016-09-19

    申请号:KR1020150029818

    申请日:2015-03-03

    Abstract: 본발명의실시예들에따른광 결합장치는제1 블록부및 상기제1 블록부의일 측면에접하는제2 블록부를포함하는광 섬유블록; 상기광 섬유블록을관통하며, 상기광 섬유블록의하면에서일 끝면(an end surface thereof)이노출되는광 섬유; 상기광 섬유블록하에배치되며, 상면에상기광 섬유의상기일 끝면과대응되도록배치된광 입출력소자를갖는반도체칩; 및상기반도체칩 상에배치되며, 리세스영역을갖는평탄화층을포함하되, 상기반도체칩의하면을기준으로상기제1 블록부의하면은상기제2 블록부의하면보다높은레벨을가지며, 상기제2 블록부의상기하면은상기리세스영역의바닥면과접하며, 상기광 섬유는상기광 입출력소자와광 결합될수 있다.

    Abstract translation: 根据本发明的实施例,光耦合装置包括:光纤块,包括与第一块单元的一侧接触的第一块单元和第二块单元; 光纤穿透光纤块,其端面暴露在光纤块的下表面上; 半导体芯片,其布置在所述光纤块的下方,并具有布置成对应于所述光纤的端面的光学输入/输出元件; 以及布置在半导体芯片上并具有凹陷区域的平坦化层。 基于半导体芯片的下表面,第一块单元的下表面具有比第二块单元的下表面更高的电平。 第二块单元的下表面与凹部的底面接触。 光纤可以光耦合到光输入/输出元件。

    광 수신 소자
    7.
    发明公开
    광 수신 소자 审中-实审
    光电探测器

    公开(公告)号:KR1020160089927A

    公开(公告)日:2016-07-29

    申请号:KR1020150009304

    申请日:2015-01-20

    Abstract: 본발명은광수신소자에관한것이다. 본발명의실시예에따르면, 기판, 상기기판의상부의제1 도핑영역, 상기기판내에제공되고, 상기제1 도핑영역을둘러싸고상기제1 도핑영역의측면과옆으로이격된링 구조의제2 도핑영역, 상기제1 도핑영역상의광 흡수층, 상기광 흡수층상의컨택층, 상기컨택층상의제1 전극, 및상기제2 도핑영역상의제2 전극을포함하는광 수신소자가제공될수 있다.

    Abstract translation: 本发明涉及一种光接收装置。 根据本发明的实施例,提供了一种光接收装置,其包括:基板; 在所述基板的上部的第一掺杂区域; 设置在所述衬底中的环结构的第二掺杂区域,被配置为围绕所述第一掺杂区域并且与所述第一掺杂区域的侧表面横向分离; 在第一掺杂区域上的光吸收层; 光吸收层上的接触层; 接触层上的第一电极; 和第二掺杂区上的第二电极。

    반도체 레이저 및 그 제조방법
    8.
    发明公开
    반도체 레이저 및 그 제조방법 审中-实审
    一种半导体激光器及其形成方法

    公开(公告)号:KR1020140048463A

    公开(公告)日:2014-04-24

    申请号:KR1020120114259

    申请日:2012-10-15

    Abstract: A semiconductor laser and a method of manufacturing the same are provided. A method of manufacturing a semiconductor laser includes providing a substrate which includes a burying oxide layer; forming patterns having an opening part which exposes the substrate by etching the burying oxide layer; forming a Ge single crystal layer in the opening part; and forming an optical coupler which is adjacent to the Ge single crystal layer on the substrate.

    Abstract translation: 提供半导体激光器及其制造方法。 制造半导体激光器的方法包括提供包括掩埋氧化物层的衬底; 形成具有通过蚀刻所述掩埋氧化物层而露出所述基板的开口部的图案; 在开口部分形成Ge单晶层; 以及形成与基板上的Ge单晶层相邻的光耦合器。

    전기-광학 변조 소자
    9.
    发明公开
    전기-광학 변조 소자 有权
    电光调制装置

    公开(公告)号:KR1020110027549A

    公开(公告)日:2011-03-16

    申请号:KR1020100066675

    申请日:2010-07-12

    CPC classification number: Y02E10/50 H01L31/04 G02B6/10 H01L31/00

    Abstract: PURPOSE: An electro-optic modulating device is provided to form vertical PN junctions or vertical PIN junctions in an optical waveguide, thereby increasing a change of an effective refractive index during a device operation. CONSTITUTION: A semiconductor film(30) configuring an optical waveguide(WG) is arranged on a substrate(10). The optical waveguide comprises the first slab part(SP1), the second slab part(SP2), and a lip part(RP). The lip part includes a thickness thicker than the first and second slab parts. The first and second doping areas(D1,D2) are formed on the first and second slab parts respectively. A vertical doping area(50) configuring a vertical structure is formed in the lip part.

    Abstract translation: 目的:提供电光调制装置以在光波导中形成垂直PN结或垂直PIN结,从而在器件操作期间增加有效折射率的变化。 构成:构成光波导(WG)的半导体膜(30)配置在基板(10)上。 光波导包括第一板坯部(SP1),第二板坯部(SP2)和唇部(RP)。 唇部包括比第一和第二板坯部分厚的厚度。 第一和第二掺杂区域(D1,D2)分别形成在第一和第二平板部件上。 在唇部形成垂直结构的垂直掺杂区域(50)。

    인터밴드 터널링 부밴드 천이 반도체 레이저
    10.
    发明公开
    인터밴드 터널링 부밴드 천이 반도체 레이저 失效
    INTERBAND TUNNELING INTERSUBBAND TRANSITION SEMICONDUCTOR LASER

    公开(公告)号:KR1020080053094A

    公开(公告)日:2008-06-12

    申请号:KR1020060125065

    申请日:2006-12-08

    Abstract: An interband tunneling intersubband transition semiconductor laser is provided to acquire a high output power with a low cost by having a simple structure having a little number of stacking. An interband tunneling intersubband transition semiconductor laser includes a first cladding layer(150a), an active region structure layer(110), a second cladding layer(150b), and electrodes(130a,130b). The active region structure layer is formed by repeatedly stacking a quantum well layer and a quantum wall layer. The quantum well layer and the quantum wall layer are a heterostructure having a broken bandgap energy, and implement an interband tunneling. The electrodes are formed on a lower part of a semiconductor substrate and an upper part of the cladding layer. When an electric power is applied to the electrodes, an interband resonant tunneling and a subband transition of a carrier in the active region structure layer are consecutively generated.

    Abstract translation: 提供了一种带间隧穿带间过渡半导体激光器,通过具有少量堆叠的简单结构,以低成本获得高输出功率。 带间隧穿带间过渡半导体激光器包括第一包层(150a),有源区结构层(110),第二覆层(150b)和电极(130a,130b)。 有源区结构层通过重复堆叠量子阱层和量子壁层而形成。 量子阱层和量子壁层是具有断带能量断裂的异质结构,并实现了带间隧穿。 电极形成在半导体衬底的下部和包覆层的上部。 当对电极施加电力时,连续地产生有源区结构层中的载流子的带间谐振隧穿和子带转变。

Patent Agency Ranking