Abstract:
본 발명은 솔더가 형성된 기판을 지지하는 스테이지, 상기 솔더를 용융시키도록 구성된 레이저, 상기 용융된 솔더를 흡수하도록 구성된 메시 구조체, 및 상기 메시 구조체를 지지하는 지지 기판을 포함하는 솔더 제거 장치 및 이를 이용한 솔더 제거방법에 관한 것이다.
Abstract:
PURPOSE: A light detection device and a manufacturing method thereof are provided to simplify manufacturing processes by forming a self-aligned light absorption layer and a first conductive pattern without an additional pattern. CONSTITUTION: An insulating pattern(106) includes a groove which exposes a part of a first conductive pattern(102). A light absorption layer(110) fills the groove of the insulating pattern. The light absorption layer has an upper surface which is arranged higher than the upper surface of the insulating pattern. A second conductive pattern(112) is arranged on the light absorption layer. Connection terminals(116) is respectively and electrically connected to the first conductive pattern and the second conductive pattern.
Abstract:
A semiconductor laser and a method of manufacturing the same are provided. A method of manufacturing a semiconductor laser includes providing a substrate which includes a burying oxide layer; forming patterns having an opening part which exposes the substrate by etching the burying oxide layer; forming a Ge single crystal layer in the opening part; and forming an optical coupler which is adjacent to the Ge single crystal layer on the substrate.
Abstract:
PURPOSE: An electro-optic modulating device is provided to form vertical PN junctions or vertical PIN junctions in an optical waveguide, thereby increasing a change of an effective refractive index during a device operation. CONSTITUTION: A semiconductor film(30) configuring an optical waveguide(WG) is arranged on a substrate(10). The optical waveguide comprises the first slab part(SP1), the second slab part(SP2), and a lip part(RP). The lip part includes a thickness thicker than the first and second slab parts. The first and second doping areas(D1,D2) are formed on the first and second slab parts respectively. A vertical doping area(50) configuring a vertical structure is formed in the lip part.
Abstract:
An interband tunneling intersubband transition semiconductor laser is provided to acquire a high output power with a low cost by having a simple structure having a little number of stacking. An interband tunneling intersubband transition semiconductor laser includes a first cladding layer(150a), an active region structure layer(110), a second cladding layer(150b), and electrodes(130a,130b). The active region structure layer is formed by repeatedly stacking a quantum well layer and a quantum wall layer. The quantum well layer and the quantum wall layer are a heterostructure having a broken bandgap energy, and implement an interband tunneling. The electrodes are formed on a lower part of a semiconductor substrate and an upper part of the cladding layer. When an electric power is applied to the electrodes, an interband resonant tunneling and a subband transition of a carrier in the active region structure layer are consecutively generated.