公开(公告)号：WO2015158444A1

公开(公告)日：2015-10-22

申请号：PCT/EP2015/053099

申请日：2015-02-13

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Xiaofeng

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

CPC classification number: G03F7/70641 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70191 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70558

Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illumination source and projection optics, the method comprising: obtaining a source shape and a mask defocus value; optimizing a dose of the lithographic process; optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

Abstract translation: 本文公开了一种计算机实现的方法，用于使用包括照明源和投影光学器件的光刻投影设备来改进用于将设计布局的一部分成像到基板上的光刻处理，该方法包括：获得源形状和掩模散焦值 ; 优化光刻工艺的剂量; 优化照明源的多个狭缝位置中的每一个的设计布局的部分。

公开(公告)号：WO2022017705A1

公开(公告)日：2022-01-27

申请号：PCT/EP2021/066806

申请日：2021-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： NIKOLSKI, Pioter ,  THEEUWES, Thomas ,  CORRADI, Antonio ,  HSU, Duan-Fu, Stephen ,  JUNG, Sun Wook

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70483 ,  G03F7/70525 ,  G03F7/70616

Abstract: Disclosed is a method of determining a process window within a process space comprising obtaining (610) contour data (615) relating to features to be provided to a substrate (625) across a plurality of layers, for each of a plurality of process conditions (600) associated with providing the features across said plurality of layers and failure mode data (650) describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine (640) a failure count for each process condition; and the process window is determined (655) by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.

公开(公告)号：WO2021110343A1

公开(公告)日：2021-06-10

申请号：PCT/EP2020/081020

申请日：2020-11-05

Applicant: CYMER INC. ,  ASML NETHERLANDS B.V.

Inventor： CONLEY, Willard, Earl ,  HSU, Duan-Fu, Stephen

IPC: G03F7/20 ,  G03F1/36

Abstract: Enhancing target features of a pattern imaged onto a substrate is described. This may include adding one or more assist features to a patterning device pattern in one or more locations adjacent to one or more target features in the patterning device pattern. The one or more assist features are added based on two or more different focus positions in the substrate. This also includes shifting the patterning device pattern and/or a design layout based on the two or more different focus positions and the one or more added assist features. This may be useful for improving across slit asymmetry. Adding the one or more assist features to the pattern and shifting the pattern and/or the design layout enhances the target features by reducing a shift caused by across slit asymmetry for a slit of a multifocal lithographic imaging apparatus. This may reduce the shift across an entire imaging field.

公开(公告)号：WO2021043596A1

公开(公告)日：2021-03-11

申请号：PCT/EP2020/073448

申请日：2020-08-21

Applicant: ASML NETHERLANDS B.V.

Inventor： LIU, Jingjing ,  HSU, Duan-Fu, Stephen ,  PENG, Xingyue

IPC: G03F7/20

Abstract: Described herein is a method (300) for determining process window limiting patterns (PWLP) based on aberration sensitivity associated with a patterning apparatus. The method includes (P301) obtaining (i) a first set of kernels (301) and a second set of kernels (302) associated with an aberration wavefront of the patterning apparatus and (ii) a design layout (303) to be printed on a substrate via the patterning apparatus; and determining (P303), via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map (310) associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining (P305), based on the aberration sensitivity map, the PWLP (315) associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

公开(公告)号：WO2020182440A1

公开(公告)日：2020-09-17

申请号：PCT/EP2020/054545

申请日：2020-02-20

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  SUN, Dezheng

IPC: G03F7/20

Abstract: A diffraction pattern guided source mask optimization (SMO) method is described. The method comprises configuring a lithographic apparatus. The method comprises determining a source variable region from a diffraction pattern. The source variable region corresponds to one or more areas of a diffraction pattern in a pupil for which pupil variables are to be adjusted. The source variable region in the diffraction pattern comprises a plurality of pixels in an image of a selected region of interest in the diffraction pattern. Determining the source variable region comprises binarization of the plurality of pixels in the image such that individual pixels are either included in the source variable region or excluded from the source variable region. The method comprises adjusting the pupil variables for the one or more areas of the pupil that correspond to the source variable region; and rendering a final pupil based on the adjusted pupil variables.

公开(公告)号：WO2020141052A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/084825

申请日：2019-12-12

Applicant: ASML NETHERLANDS B.V.

Inventor： BASELMANS, Johannes, Jacobus, Matheus ,  HSU, Duan-Fu, Stephen ,  BOUMAN, Willem, Jan ,  TIMMERMANS, Frank, Jan ,  VAN LARE, Marie-Claire

IPC: G03F7/20

Abstract: Described herein are apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

公开(公告)号：WO2019072703A1

公开(公告)日：2019-04-18

申请号：PCT/EP2018/077101

申请日：2018-10-05

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen

IPC: G03F1/24 ,  G03F1/36 ,  G03F1/70 ,  G03F7/20

Abstract: A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

公开(公告)号：WO2016162157A1

公开(公告)日：2016-10-13

申请号：PCT/EP2016/054899

申请日：2016-03-08

Applicant: ASML NETHERLANDS B.V.

Inventor： DRIESSEN, Frank, Arnoldus, Johannes, Maria ,  HSU, Duan-Fu, Stephen

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/34 ,  G03F7/70033 ,  G03F7/70433

Abstract: A patterning device carries a pattern of features to be transferred onto a substrate using a lithographic apparatus. The patterning device is free of light absorber material, at least in an area. The pattern of features in the said area may comprise a dense array of lines, trenches, dots or holes. Individual lines, holes etc. (262/362) are defined in at least one direction by pairs of edges (230/330, 5 232/332) between regions of different phase in the patterning device. A distance (CD') between the pair of edges in the said one direction is at least 15% smaller than a size of the individual feature to be formed on the substrate. The patterning device may be adapted for use in EUV lithography. The patterning device may be adapted for use in a negative tone resist & development process (NTD).

Abstract translation: 图案形成装置使用光刻装置承载要转印到基板上的特征图案。 图案形成装置至少在一个区域中不含光吸收材料。 所述区域中的特征图案可以包括密集的线阵列，沟槽，点或孔。 在图案形成装置中，通过在不同相位的区域之间的成对边缘（230/330,532/332）在至少一个方向上限定各个线，孔等（262/362）。 所述一个方向上的一对边缘之间的距离（CD'）比要在基板上形成的单独特征的尺寸小至少15％。 图案形成装置可以适用于EUV光刻技术。 图案形成装置可以适用于负色调抗蚀剂和显影工艺（NTD）。

公开(公告)号：WO2016008711A1

公开(公告)日：2016-01-21

申请号：PCT/EP2015/064742

申请日：2015-06-29

Applicant: ASML NETHERLANDS B.V.

Inventor： HSU, Duan-Fu, Stephen ,  LIU, Feng-Liang

IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

CPC classification number: G03F7/70433 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70441 ,  G03F7/70483 ,  G03F7/7085 ,  G06F17/5081

Abstract: Disclosed herein are several methods of reducing one or more pattern displacement errors, contrast loss, best focus shift, tilt of a Bossung curve of a portion of a design layout used in a lithographic process for imaging that portion onto a substrate using a lithographic apparatus. The methods include adjusting an illumination source of the lithographic apparatus, placing assist features onto or adjusting positions and/or shapes existing assist features in the portion. Adjusting the illumination source and/or the assist features may be by an optimization algorithm.

Abstract translation: 本文公开了几种降低一种或多种图案位移误差，对比度损失，最佳聚焦偏移，用于光刻工艺中使用的设计布局的一部分的Bossung曲线的倾斜，用于使用光刻设备将该部分成像到基板上。 所述方法包括调整光刻设备的照明源，将辅助特征放置在或调节位置和/或形状部分中现有的辅助特征。 可以通过优化算法来调整照明源和/或辅助特征。

公开(公告)号：EP4165471A1

公开(公告)日：2023-04-19

申请号：EP21727387.9

申请日：2021-05-14

Applicant: ASML Netherlands B.V.

Inventor： PENG, Xingyue ,  SHI, Zhan ,  HSU, Duan-Fu, Stephen ,  HOWELL, Rafael C. ,  LIU, Gerui

IPC: G03F7/20