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21.发明授权公开(公告)号：US09714827B2
公开(公告)日：2017-07-25
申请号：US14412771
申请日：2013-06-17
Applicant: ASML Netherlands B.V.
IPC: H01L23/544 , G01B11/27 , G03F7/20 , G01B11/30
CPC classification number: G01B11/27 , G01B11/30 , G03F7/20 , G03F7/70633 , H01L23/544 , H01L2924/0002 , H01L2924/00
Abstract: A lithographic process is used to form a plurality of target structures (92, 94) distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprise a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.
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22.发明授权公开(公告)号：US09163935B2
公开(公告)日：2015-10-20
申请号：US13687569
申请日：2012-11-28
Applicant: ASML Netherlands B.V.
CPC classification number: G01B11/24 , G01B11/14 , G03F7/70633 , G03F9/7003 , G03F9/7049 , G03F9/7088 , G03F9/7092
Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.
Abstract translation: 公开了一种器件制造方法，以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下，确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。
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公开(公告)号：US12276921B2
公开(公告)日：2025-04-15
申请号：US17923913
申请日：2021-04-21
Applicant: ASML Netherlands B.V.
Inventor： Olger Victor Zwier , Maurits Van Der Schaar , Hilko Dirk Bos , Hans Van Der Laan , S. M. Masudur Rahman Al Arif , Henricus Wilhelmus Maria Van Buel , Armand Eugene Albert Koolen , Victor Emanuel Calado , Kaustuve Bhattacharyya , Jin Lian , Sebastianus Adrianus Goorden , Hui Quan Lim
IPC: G03F7/00
Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.
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公开(公告)号：US12204826B2
公开(公告)日：2025-01-21
申请号：US18095515
申请日：2023-01-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
IPC: G03F7/00 , G03F9/00 , G06F30/20 , G06F111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
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公开(公告)号：US11580274B2
公开(公告)日：2023-02-14
申请号：US15559759
申请日：2016-03-24
Applicant: ASML Netherlands B.V.
Inventor： Lotte Marloes Willems , Kaustuve Bhattacharyya , Panagiotis Pieter Bintevinos , Guangqing Chen , Martin Ebert , Pieter Jacob Mathias Hendrik Knelissen , Stephen Morgan , Maurits Van Der Schaar , Leonardus Henricus Marie Verstappen , Jen-Shiang Wang , Peter Hanzen Wardenier
IPC: G03F7/20 , G06F30/20 , G03F9/00 , G06F111/10
Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.
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Patent Agency Ranking
26.发明授权公开(公告)号：US11466980B2
公开(公告)日：2022-10-11
申请号：US15649173
申请日：2017-07-13
Applicant: ASML Netherlands B.V
IPC: H01L21/68 , G01B11/27 , G03F7/20 , G01B11/30 , H01L23/544
Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.
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公开(公告)号：US11428521B2
公开(公告)日：2022-08-30
申请号：US17519641
申请日：2021-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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公开(公告)号：US11422476B2
公开(公告)日：2022-08-23
申请号：US17061641
申请日：2020-10-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Wim Tjibbo Tel , Frank Staals , Leon Martin Levasier
Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
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公开(公告)号：US11249404B2
公开(公告)日：2022-02-15
申请号：US16619821
申请日：2018-05-18
Applicant: ASML Netherlands B.V.
Inventor： Emil Peter Schmitt-Weaver , Kaustuve Bhattacharyya , Rene Marinus Gerardus Johan Queens , Wolfgang Helmut Henke , Wim Tjibbo Tel , Theodorus Franciscus Adrianus Maria Linschoten
IPC: G03F9/00
Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.
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公开(公告)号：US20200218166A1
公开(公告)日：2020-07-09
申请号：US16733890
申请日：2020-01-03
Applicant: ASML NETHERLANDS B.V.
Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.
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