Device manufacturing method and associated lithographic apparatus, inspection apparatus, and lithographic processing cell
    22.
    发明授权
    Device manufacturing method and associated lithographic apparatus, inspection apparatus, and lithographic processing cell 有权
    器件制造方法及相关光刻设备,检验设备和光刻处理单元

    公开(公告)号:US09163935B2

    公开(公告)日:2015-10-20

    申请号:US13687569

    申请日:2012-11-28

    Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

    Abstract translation: 公开了一种器件制造方法,以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下,确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置,并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。

    Metrology method and apparatus, lithographic system, device manufacturing method and substrate

    公开(公告)号:US11466980B2

    公开(公告)日:2022-10-11

    申请号:US15649173

    申请日:2017-07-13

    Abstract: A lithographic process is used to form a plurality of target structures distributed at a plurality of locations across a substrate and having overlaid periodic structures with a number of different overlay bias values distributed across the target structures. At least some of the target structures comprising a number of overlaid periodic structures (e.g., gratings) that is fewer than said number of different overlay bias values. Asymmetry measurements are obtained for the target structures. The detected asymmetries are used to determine parameters of a lithographic process. Overlay model parameters including translation, magnification and rotation, can be calculated while correcting the effect of bottom grating asymmetry, and using a multi-parameter model of overlay error across the substrate.

    METROLOGY RECIPE SELECTION
    30.
    发明申请

    公开(公告)号:US20200218166A1

    公开(公告)日:2020-07-09

    申请号:US16733890

    申请日:2020-01-03

    Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

Patent Agency Ranking