-
21.发明申请公开(公告)号：US20200073254A1
公开(公告)日：2020-03-05
申请号：US16675674
申请日：2019-11-06
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Youping ZHANG , Hendrik Jan Hidde SMILDE , Anagnostis TSIATMAS , Adriaan Johan VAN LEEST , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Paul Christiaan HINNEN
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
-
公开(公告)号：US20190339211A1
公开(公告)日：2019-11-07
申请号：US16465161
申请日：2017-11-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Ralph Timotheus HUIJGEN , Marc Jurian KEA , Marcel Theodorus Maria VAN KESSEL , Masashi ISHIBASHI , Chi-Hsiang FAN , Hakki Ergün CEKLI , Youping ZHANG , Maurits VAN DER SCHAAR , Liping REN
IPC: G01N21/956 , G03F7/20 , H01L21/66 , G03F9/00
Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.
-
公开(公告)号：US20190170657A1
公开(公告)日：2019-06-06
申请号：US16270155
申请日：2019-02-07
Applicant: ASML Netherlands B.V.
Inventor： Arie Jeffrey Maria DEN BOEF , Arno Jan BLEEKER , Youri Johannes Laurentiu VAN DOMMELEN , Mircea DUSA , Antoine Gaston Marie KIERS , Paul Frank LUEHRMANN , Henricus Petrus Maria PELLEMANS , Maurits VAN DER SCHAAR , Cedric Desire GROUWSTRA , Markus Gerardus Martinus VAN KRAAIJ
Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
-
公开(公告)号：US20180364590A1
公开(公告)日：2018-12-20
申请号：US16061236
申请日：2016-11-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Maurits VAN DER SCHAAR , Patrick WARNAAR , Youping ZHANG , Arie Jeffrey DEN BOEF , Feng XIAO , Martin EBERT
Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.
-
25.发明申请公开(公告)号：US20180239851A1
公开(公告)日：2018-08-23
申请号：US15900735
申请日：2018-02-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander YPMA , Maurits VAN DER SCHAAR , Georgios TSIROGIANNIS , Leendert Jan KARSSEMEIJER , Chi-Hsiang FAN
CPC classification number: G06F17/5009 , G03F7/70516 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7019 , G06N7/005
Abstract: A process of calibrating parameters of a stack model used to simulate the performance of measurement structures in a patterning process, the process including: obtaining a stack model used in a simulation of performance of measurement structures; obtaining calibration data indicative of performance of the measurement structures; calibrating parameters of the model by, until a termination condition occurs, repeatedly: simulating performance of the measurement structures with the simulation using a candidate model; approximating the simulation, based on a result of the simulation, with a surrogate function; and selecting a new candidate model based on the approximation.
-
Patent Agency Ranking
26.发明申请公开(公告)号：US20180238737A1
公开(公告)日：2018-08-23
申请号：US15962826
申请日：2018-04-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Chi-Hsiang FAN , Maurits VAN DER SCHAAR , Youping ZHANG
CPC classification number: G01J3/447 , G01J2003/283 , G01N21/47 , G03C7/00 , G03F7/70616 , G03F7/70633 , G03F7/70683
Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.
-
27.发明申请Method And Apparatus for Measuring a Parameter of a Lithographic Process, Substrate and Patterning Devices for use in the Method 审中-公开用于测量方法中使用的平版印刷工艺，基板和图案化装置的参数的方法和装置公开(公告)号：US20170059999A1
公开(公告)日：2017-03-02
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构。 每个目标结构具有使用第一和第二光刻步骤在衬底上的单个材料层中形成的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻 以接近第一光刻步骤中形成的特征的空间周期的一半的第一偏压量步进，并且在第二目标结构中，在第二光刻步骤中限定的特征相对于第一光刻步骤中限定的特征移位 光刻步骤接近接近所述空间周期的一半的第二偏置量并且不同于第一偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理的参数的测量 第一和第二目标结构。
-
28.发明申请Metrology Method and Apparatus, Lithographic System and Device Manufacturing Method 有权计量方法与仪器，平版印刷系统和器件制造方法公开(公告)号：US20160161864A1
公开(公告)日：2016-06-09
申请号：US14906896
申请日：2014-07-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Scott Anderson MIDDLEBROOKS , Niels GEYPEN , Hendrik Jan Hidde SMILDE , Alexander STRAAIJER , Maurits VAN DER SCHAAR , Markus Gerardus Martinus Maria VAN KRAAIJ
IPC: G03F7/20
CPC classification number: G03F7/70633
Abstract: Disclosed is a method of measuring a parameter of a litho-graphic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
Abstract translation: 公开了一种测量光刻图形处理参数的方法和相关联的检查装置。 该方法包括使用多个不同的照明条件测量衬底上的至少两个目标结构，所述目标结构具有有意的覆盖偏移; 为每个目标结构获得表示总体不对称性的不对称测量，其包括由于（i）故意重叠偏差引起的贡献，（ii）在形成目标结构期间的覆盖误差，以及（iii）任何特征不对称性。 对不对称测量数据进行回归分析，通过将线性回归模型拟合到针对另一目标结构的不对称测量的一个目标结构的不对称测量的平面表示，线性回归模型不一定通过平面表示的原点拟合 。 然后可以从线性回归模型描述的梯度确定覆盖误差。
-
公开(公告)号：US20150185625A1
公开(公告)日：2015-07-02
申请号：US14577966
申请日：2014-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Guangqing CHEN , Wei LIU , Maurits VAN DER SCHAAR
Abstract: A method of metrology target design is described. The method includes determining a sensitivity of a parameter of a metrology target design to a perturbation of a process parameter for forming, or measuring the formation of, the metrology target, and determining a robustness of the metrology target design based on the sum of the sensitivity multiplied by the perturbation of at least one of the process parameters.
Abstract translation: 描述了一种计量目标设计方法。 该方法包括将测量目标设计的参数的灵敏度确定为用于形成或测量计量目标的形成的过程参数的扰动，以及基于灵敏度之和确定度量目标设计的鲁棒性 乘以至少一个过程参数的扰动。
-
30.发明申请Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method 有权检验方法和装置，平版印刷设备，平版印刷加工单元和器件制造方法公开(公告)号：US20140333922A1
公开(公告)日：2014-11-13
申请号：US14335702
申请日：2014-07-18
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus VAN DE KERKHOF , Maurits VAN DER SCHAAR , Andreas FUCHS , Martyn John COOGANS
CPC classification number: G03F7/7065 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70633 , G03F9/7049 , G03F9/7088
Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.
Abstract translation: 本发明使用在图像平面内或附近测量衍射光谱，以便确定曝光的基底的性质。 特别地，正和负的第一衍射级被分离或发散，被检测并且测量它们的强度以确定衬底上的暴露层的覆盖层（或其它性质）。
-
-
-
-
-
-
-
-
-
Search Results
42
records
(took 0.041 seconds)
