Abstract:
PROBLEM TO BE SOLVED: To provide improved forms of marker, in particular alignment and overlay markers, and a method of forming these markers on substrates. SOLUTION: First, a pattern of two chemically distinct feature types having a pitch P1 comparable to product features is formed. This pattern is then masked by a resist 11 in the form of a desired marker, which includes a larger pitch P2 than the pattern. Finally, one of the two feature types is selectively etched in open areas. The result is a marker with the large pitch P2 suitable to be read with long wavelength radiation but the edges of the features are defined in an exposure step having the pitch P1 equivalent to the product features. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an improved alignment system capable of detecting the marker which has received process fluctuation, by allowing use of smaller alignment marker or radiation of different wavelength. SOLUTION: An alignment sensor comprises a spatial coherent radiation source which supplies radiation beam to an angle-resolved skiatrometer. The surface of pupil specifies an angle of incidence of the position of radial direction of radiation at a substrate while an angular position specifies the azimuth angle of radiation. A detector is preferable to be a two-dimensional detector so as to be capable of measuring the two-dimensional angular dispersion spectrum of a substrate target. Alignment is carried out by detecting beats in the dispersion spectrum during scanning the substrate with respect to the skiatrometer. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an alternative method of calculating an overlay error which reduces the effect of noise and results in a more accurate overlay error calculation. SOLUTION: The reflected radiation from a target mark including a plurality of diffraction gratings or the like is detected by an array of pixels. The overlay error of the gratings for each pixel is detected, and an array of overlay errors is determined. Rather than simply averaging the overlay error value for all the pixels, filtering is performed. Pixels may be filtered according to the detected value of the overlay error or the detected intensity of the pixel. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a target capable of providing a scatterometry target, and of reducing the size of a diffraction grating of the target without impairing a further high-order diffraction order when the pitch of the diffraction grating is smaller than the wavelength of a measurement radiation beam. SOLUTION: An overlay target on a substrate is disclosed, the overlay target including a periodic array of structures wherein every structure is different from the rest of the structures. The periodic array is desirably made of two interlaced diffraction gratings, one of the gratings having a different pitch from the other grating in order to form an asymmetry in the array. This asymmetry can then be measured by measuring the diffraction spectra of radiation reflected from the overlay target. Variation in the asymmetry indicates the presence of an overlay error in layers on the substrate, where overlay targets are printed on subsequent layers. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an instrument and process that can reduce or correct the contribution of the strains or defects of a mask pattern to the strain of an exposure pattern. SOLUTION: In the instrument for determining the process parameter of a process for generating an overlay pattern on a substrate, by applying a process model to a proposed process parameter and data, including a deduced overlay error between overlay patterns, the proposed overlay error corresponds to a process control, depending on the proposed value of the process parameter. Thus, the value determined for the process parameter corresponds to the minimum overlay error. The instrument determines the first value of the process parameter that generates the first portion of the overlay pattern in the first section of a target field, and a second value that is different from the first value of the process parameter for generating one of the second portion of the overlay pattern. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus capable of improving image quality in a plurality of focal depths. SOLUTION: When using a scatterometer, different sections of a target region have different focal depths, respectively, and therefore, when measuring an entire region, a result of the measurement is partially out of a focus. In order to compensate this, a lens array is arranged in a back focal plane of a high numerical aperture lens. COPYRIGHT: (C)2008,JPO&INPIT