公开(公告)号：WO2010006935A2

公开(公告)日：2010-01-21

申请号：PCT/EP2009058404

申请日：2009-07-03

Applicant: ASML NETHERLANDS BV ,  MOS EVERHARDUS ,  MEGENS HENRICUS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS ,  MIDDLEBROOKS SCOTT

Inventor： MOS EVERHARDUS ,  MEGENS HENRICUS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS ,  MIDDLEBROOKS SCOTT

IPC: G03F9/00

CPC classification number: G03F9/7003 ,  G03F7/705 ,  G03F7/70633

Abstract: A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.

Abstract translation: 一种光刻系统包括光刻设备，该光刻设备包括将图案化的辐射束投影到衬底的目标部分上的投影系统和在衬底上的多个位置处测量图案的特征在衬底上的位置的对准系统。 控制器将测量的位置与值的网格上的点进行比较，并基于网格上的对应中间点的值推断衬底上的中间位置的值，以便提供衬底​​上的中间位置的指示以及它们相对的位移 到电网。 网格基于至少一个正交基函数，基板上的测量在对应于至少一个正交基函数的根值的位置处执行。

公开(公告)号：NL2004887A

公开(公告)日：2010-12-27

申请号：NL2004887

申请日：2010-06-14

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS ,  SIMONS HUBERTUS ,  MIDDLEBROOKS SCOTT

IPC: G03F9/00 ,  G03F7/20

Abstract: A method for selecting sample positions on a substrate from a set of all available sample positions is provided, in which a representation of a model, which may represent the variation of one or more properties across the substrate, is analyzed in order to identify the sample positions having the greatest effect on the model.

公开(公告)号：NL2009719A

公开(公告)日：2013-06-05

申请号：NL2009719

申请日：2012-10-29

Applicant: ASML NETHERLANDS BV

Inventor： WEI XIUHONG ,  BIJNEN FRANCISCUS ,  HAREN RICHARD ,  KERKHOF MARCUS ,  MOS EVERHARDUS ,  SIMONS HUBERTUS ,  EDART REMI ,  DECKERS DAVID ,  SCHOUMANS NICOLE ,  LYULINA IRINA

IPC: G03F7/20 ,  H01L21/68

公开(公告)号：NL2009345A

公开(公告)日：2013-04-02

申请号：NL2009345

申请日：2012-08-23

Applicant: ASML NETHERLANDS BV

Inventor： SANDEN STEFAN ,  HAREN RICHARD ,  SIMONS HUBERTUS ,  EDART REMI ,  WEI XIUHONG ,  KUBIS MICHAEL ,  LYULINA IRINA

IPC: G03F7/20

公开(公告)号：NL2008168A

公开(公告)日：2012-08-28

申请号：NL2008168

申请日：2012-01-24

Applicant: ASML NETHERLANDS BV

Inventor： LYULINA IRINA ,  SIMONS HUBERTUS ,  TENNER MANFRED ,  HERES PIETER ,  KEMENADE MARC ,  SANDEN STEFAN ,  SLOTBOOM DAAN

IPC: G03F7/20

Abstract: Estimating model parameters of a lithographic apparatus and controlling lithographic processing by a lithographic apparatus includes performing an exposure using a lithographic apparatus projecting a pattern onto a wafer. A set of predetermined wafer measurement locations is measured. Predetermined and measured locations of the marks are used to generate radial basis functions. Model parameters of said substrate are calculated using the generated radial basis functions as a basis function across said substrate. Finally, the estimated model parameters are used to control the lithographic apparatus in order to expose the substrate.

公开(公告)号：NL2003118A1

公开(公告)日：2010-01-18

申请号：NL2003118

申请日：2009-07-03

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS ,  MEGENS HENRICUS ,  SCHAAR MAURITS VAN DER ,  SIMONS HUBERTUS ,  MIDDLEBROOKS SCOTT

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/68

公开(公告)号：NL2011276A

公开(公告)日：2014-03-10

申请号：NL2011276

申请日：2013-08-07

Applicant: ASML NETHERLANDS BV

Inventor： MOS EVERHARDUS ,  SIMONS HUBERTUS ,  BERGE PETER TEN ,  SCHOUMANS NICOLE ,  KUBIS MICHAEL ,  ABEN PAUL

IPC: G01N21/47 ,  G03F7/20

Abstract: A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool.