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    Process variation detecting methods, angularly resolved scatterometers, lithographic systems, and lithographic cells
    1.
    发明专利
    Process variation detecting methods, angularly resolved scatterometers, lithographic systems, and lithographic cells 有权
    过程变异检测方法，角度分辨率计算器，光刻系统和光刻电池

    公开(公告)号：JP2014030048A

    公开(公告)日：2014-02-13

    申请号：JP2013207180

    申请日：2013-10-02

    Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

    Inventor： HUGO CRAMER ,  ARIE DEN BOEF ,  MEGENS HENRICUS ,  HENDRIK SMILDE ,  ANDRIANUS SCHELLEKENS ,  MICHAEL KUBIS

    IPC: H01L21/027

    CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

    Abstract: PROBLEM TO BE SOLVED: To provide methods of detecting micro-loading and process effects on metrology targets.SOLUTION: A structure has at least one feature which has an asymmetry in a printed profile which varies as a function of the focus of a lithographic apparatus on a substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensity of the measured first and second portions of the spectra is measured and used to measure the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate.

    Abstract translation: 要解决的问题：提供检测计量目标的微载荷和过程效应的方法。解决方案：结构具有至少一个特征，其在印刷轮廓中具有不对称性，其随着光刻设备的焦点而变化 底物。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 测量所测量的第一和第二部分光谱强度的比率并用于测量周期性结构轮廓的不对称性和/或提供焦点在基底上的指示。

    METHOD AND APPARATUS FOR DETERMINING LITHOGRAPHIC QUALITY OF A STRUCTURE
    2.
    发明申请
    METHOD AND APPARATUS FOR DETERMINING LITHOGRAPHIC QUALITY OF A STRUCTURE 审中-公开
    用于确定结构的光刻质量的方法和装置

    公开(公告)号：WO2014082813A2

    公开(公告)日：2014-06-05

    申请号：PCT/EP2013072719

    申请日：2013-10-30

    Applicant: ASML NETHERLANDS BV

    Inventor： GROOTJANS WILLEM JAN ,  GARCIA GRANDA MIGUEL ,  KRIST JOUKE ,  MEGENS HENRICUS ,  XU LU

    IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

    CPC classification number: G01N21/95607 ,  G01N21/47 ,  G01N2021/4792 ,  G01N2201/06113 ,  G01N2201/12 ,  G03F7/70133 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

    Abstract: Method for determining lithographic quality of a structure produced by a lithographic process using a periodic pattern, such as a grating, detects lithographic process window edges and optimum process conditions. Method steps are: 602: printing a structure using a lithographic process using a grating pattern; 604: selecting a first characteristic, such as a polarization direction, for the illumination; 606: illuminating the structure with incident radiation with the first characteristic; 608: detecting scattered radiation; 610: selecting a second characteristic, such as a different polarization direction, for the illumination; 612: illuminating the structure with incident radiation with the second characteristic; 614: detecting scattered radiation; 616: rotating one or more angularly resolved spectrum to line up the polarizations, thus correcting for different orientations of the polarizations; 618: determining a difference between the measured angularly resolved spectra; and 620: determining a value of lithographic quality of the structure using the determined difference.

    Abstract translation: 用于通过使用诸如光栅的周期性图案的光刻处理产生的结构的光刻质量的方法检测光刻工艺窗口边缘和最佳工艺条件。 方法步骤是：602：使用光栅图案使用光刻工艺印刷结构; 604：为照明选择诸如偏振方向的第一特性; 606：用具有第一特征的入射辐射照射结构; 608：检测散射辐射; 610：为照明选择诸如不同偏振方向的第二特性; 612：用具有第二特征的入射辐射照射结构; 614：检测散射辐射; 616：旋转一个或多个角度分辨的光谱以对齐偏振，从而校正偏振的不同取向; 618：确定测得的角度分辨光谱之间的差异; 和620：使用确定的差异来确定结构的平版印刷质量的值。

    ALIGNMENT SYSTEM, LITHOGRAPHIC SYSTEM AND METHOD
    3.
    发明申请
    ALIGNMENT SYSTEM, LITHOGRAPHIC SYSTEM AND METHOD 审中-公开
    对准系统，光刻系统和方法

    公开(公告)号：WO2010006935A2

    公开(公告)日：2010-01-21

    申请号：PCT/EP2009058404

    申请日：2009-07-03

    Applicant: ASML NETHERLANDS BV ,  MOS EVERHARDUS ,  MEGENS HENRICUS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS ,  MIDDLEBROOKS SCOTT

    Inventor： MOS EVERHARDUS ,  MEGENS HENRICUS ,  VAN DER SCHAAR MAURITS ,  SIMONS HUBERTUS ,  MIDDLEBROOKS SCOTT

    IPC: G03F9/00

    CPC classification number: G03F9/7003 ,  G03F7/705 ,  G03F7/70633

    Abstract: A lithographic system includes a lithographic apparatus comprising a projection system which projects a patterned radiation beam onto a target portion of a substrate and an alignment system which measures the position of a feature of the pattern on the substrate at a number of locations over the substrate. A controller compares the measured positions with points on a grid of values and extrapolates values for intermediate positions on the substrate based on values of corresponding intermediate points on the grid, so as to provide an indication of the intermediate positions on the substrate and their displacements relative to the grid. The grid is based on at least one orthogonal basis function, the measurement on the substrate being performed at positions corresponding to the root values of the at least one orthogonal basis function.

    Abstract translation: 一种光刻系统包括光刻设备，该光刻设备包括将图案化的辐射束投影到衬底的目标部分上的投影系统和在衬底上的多个位置处测量图案的特征在衬底上的位置的对准系统。 控制器将测量的位置与值的网格上的点进行比较，并基于网格上的对应中间点的值推断衬底上的中间位置的值，以便提供衬底​​上的中间位置的指示以及它们相对的位移 到电网。 网格基于至少一个正交基函数，基板上的测量在对应于至少一个正交基函数的根值的位置处执行。

    METHOD, INSPECTION APPARATUS AND SUBSTRATE FOR DETERMINING AN APPROXIMATE STRUCTURE OF AN OBJECT ON A SUBSTRATE.
    7.
    发明专利
    METHOD, INSPECTION APPARATUS AND SUBSTRATE FOR DETERMINING AN APPROXIMATE STRUCTURE OF AN OBJECT ON A SUBSTRATE. 未知

    公开(公告)号：NL2005346A

    公开(公告)日：2011-04-13

    申请号：NL2005346

    申请日：2010-09-13

    Applicant: ASML NETHERLANDS BV

    Inventor： CRAMER HUGO ,  MEGENS HENRICUS

    IPC: G01N21/47 ,  G03F7/20

    Abstract: A system and method determine an approximate structure of an object on a substrate. This may be applied in model based metrology of microscopic structures to assess critical dimension or overlay performance of a lithographic apparatus. A scatterometer is used to determine approximate structure of an object, such as a grating on a stack, on a substrate. The wafer substrate has an upper layer and an underlying layer. The substrate has a first scatterometry target region, including the grating on a stack object. The grating on a stack is made up of the upper and underlying layers. The upper layer is patterned with a periodic grating. The substrate further has a neighboring second scatterometry target region, where the upper layer is absent. The second region has just the unpatterned underlying layers.

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