Abstract:
A surface-emitting laser (10), in which light is emitted vertically at one end from a 45.degree angled facet (22), includes a second end (28) having a perpendicular facet from which light is emitted horizontally, for monitoring.
Abstract:
A semiconductor chip has at least two DFB etched facet laser cavities with one set of facets with AR coatings and a second set of etched facets with HR coatings that have a different relative position with respect to the gratings. This creates a difference in the phase between each of the etched facets and the gratings which changes the operational characteristics of the two laser cavities such that at least one of the lasers provides acceptable performance. As a result, the two cavity arrangement greatly improves the yield of the fabricated chips.
Abstract:
A surface-emitting laser (see Fig. 2, Character 10), in which light is emitted vertically at one end from a near 45° angled facet, includes a second end (see Fig. 2, Character 28) having a perpendicular facet from which light is emitted horizontally, for monitoring. The surface-emitting laser (see Fig. 2, Character 10) comprises a divergence-compensating lens (see Fig. 21, Character 282) on the surface above the near 45°angled facet.
Abstract:
A ring cavity laser (20) has at least two facets (32,34) and a mechanism is provided to produce unidirectional propagation and light emission at a first wavelength. A source of laser light (60) at a second wavelength is injected into the cavity to reverse the direction of propagation and to produce emission at the second wavelength.
Abstract:
An integrated semiconductor laser device capable of emitting light of selected wavelengths includes multiple ring lasers of different cavity lengths coupled in series or in parallel to a common output to produce an output beam having a wavelength corresponding to the selected ring lasers.