ELECTRON EMITTING ELEMENT, ELECTRON SOURCE AND IMAGE FORMING DEVICE USING THE ELEMENT, AND MANUFACTURE THEREOF

    公开(公告)号:JPH103853A

    公开(公告)日:1998-01-06

    申请号:JP17288396

    申请日:1996-06-13

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting element, in which a leakage and inactive area is reduced, by depositing an element electrode material on a substrate, and forming a narrow clearance between a pair of element electrodes and an electrode so as to form an electron emitting part in the narrow clearance. SOLUTION: A quarts glass is used as a substrate 1, and after sufficiently washing the substrate with an organic solvent, Ti and Pt with predetermined thicknesses are deposited on the substrate 1 by vacuum evaporation so as to form the element electrode material. Then, a part between the element electrodes is locally eliminated by the focusing ion beam(FIB) so as to form a narrow clearance between the element electrodes 2, 3 at a predetermined distances W, L. A predetermined voltage is applied between the element electrodes 2, 3, and the value of the flowing current is measured so as to confirm the insulation between the electrodes 2, 3. A predetermined voltage is applied between the electrodes 2, 3 in a vacuum container for electrifying (activation processing), and the element current and the emission current, the value of which was 0 before the activation processing is performed, is remarkably changed for increase, and an electron emitting part 5 is formed.

    ELECTRON EMITTING ELEMENT, ELECTRON SOURCE, IMAGE FORMING DEVICE, AND MANUFACTURE THEREOF

    公开(公告)号:JPH103852A

    公开(公告)日:1998-01-06

    申请号:JP17288096

    申请日:1996-06-13

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To provide an electron emitting element having an excellent electron emitting characteristic with excellent reproducibility by forming a thin crack latent image at a part of a conductive film, and performing the foaming process and the activating process. SOLUTION: A quartz glass board is prepared as an insulating substrate 1, and after sufficiently washing this substrate, element electrodes 2, 3 made of Ni are formed on a substrate surface. After spattering Pd and heating it for oxidation in the atmospheric air, a conductive film 4 is formed by photolithography and dry etching. Continuously, the film 4 between the electrodes 2, 3 is locally eliminated so as to form a thin part (crack latent image) near a central part between the electrodes 2, 3. This element is provided in a vacuum container, and after discharging the air, voltage is applied between the electrodes 2, 3 by a power source, and electrifying (forming processing) is performed to the film 4 so as to form an electron emitting part 5 in the crack latent image part. Voltage is applied between the electrodes 2, 3 in the vacuum container, and activating processing is performed so as to form the electron emitting part 5.

    ELECTRON EMISSION ELEMENT, ITS MANUFACTURE, AND ELECTRON SOURCE AND IMAGE FORMING DEVICE USING IT

    公开(公告)号:JPH08115652A

    公开(公告)日:1996-05-07

    申请号:JP27855694

    申请日:1994-10-19

    Applicant: CANON KK

    Abstract: PURPOSE: To simplify fabrication processes and to provide a uniform electron emission characteristic by forming on an insulating substrate a pair of electrodes facing each other with a microclearance between them, and forming an electron emission element from a sediment accumulated in the clearance and composed chiefly of carbon. CONSTITUTION: An element electrode material is accumulated on an insulating substrate 1 and then a predetermined cliarance L is formed between element electrodes 2, 2' by means of a convergent ion beam. A sediment 3 composed mainly of carbon is accumulated in the clearance L. The sediment 3 is preferably fibrous carbons, consisting of graphite or amorphous carbons. The fibrous carbons are produced by heat decomposition of hydrocarbons, such as benzene, or CO in a gaseous phase with the use of particles of Fe, etc., as catalysts. The use of Pd as the nuclei for formation of the fibrous carbons is desirable since the maximum process temperature can then be lowered to 450 deg.C or less. Ni can also be used in addition to Fe and Pd.

    METAL OXIDE MATERIAL AND SUPERCONDUCTING DEVICE USING SAME

    公开(公告)号:JPH07206441A

    公开(公告)日:1995-08-08

    申请号:JP1130194

    申请日:1994-01-06

    Applicant: CANON KK

    Abstract: PURPOSE:To provide a novel metal oxide material stable to moisture without causing structural phase transfer from the tetragonal to rhombic system related to the formation of a twin crystal structure or without necessitating the heat treatment causing structural phase transfer and to furnish a superconducting element or a superconducting compact with the metal oxide material as the structural material. CONSTITUTION:This metal oxide material consists of essential elements of Ln, M, Ba, Ti, Cu and O (Ln is Y and >=1 kind of element or atomic group selected from La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu) and has a hexahedron or pyramid-type pentahedron of Cu and O and an octahedron of Ti and O which are two-dimensionally arranged in the basic structure at the same time. The superconducting element and compact consists of the metal oxide material.

    METHOD FOR FORMING SEED
    26.
    发明专利

    公开(公告)号:JPH05121349A

    公开(公告)日:1993-05-18

    申请号:JP30831191

    申请日:1991-10-29

    Applicant: CANON KK

    Abstract: PURPOSE:To provide a method for forming a small seed, by which the planarization of the active region including the seed is possible, and the further the pollution of the film surface is little. CONSTITUTION:A recess having such a form that the bottom is wider than the opening is made in a quartz glass substrate 1 and an SiN film 3, and a polycrystalline film is formed in this recess, and then the greater part of the region 7 of the polycrystalline film, where ions are implanted, are made amorphous by implanting ions into the polycrystalline Si film, and the polycrystalline film region 6, where ions are not implanted, is left as a seed. Accordingly, ions are intercepted in the polycrystalline film region in the vicinity of the edge of the recess, so a part of the polycrystalline film is not made amorphous, thus the polycrystalline seed cab be left in the region made amorphous, and a minute seed can be made by a self-alignment process without using a resist.

    FORMATION METHOD FOR SEED
    27.
    发明专利

    公开(公告)号:JPH04367217A

    公开(公告)日:1992-12-18

    申请号:JP14329191

    申请日:1991-06-14

    Applicant: CANON KK

    Abstract: PURPOSE:To form a seed in a self-aligned manner, to make the size of the seed fine and to form the seed without using a resist or a laser spot by a method wherein, after a stepped part has been formed on a substratum material, a crystal film is formed and, after that, ions are implanted into the whole surface of the crystal film. CONSTITUTION:A crystal film 3 is formed on a substratum material 1; after that, impurities are ion-implanted into the crystal film 3. Thereby, the crystal film 3 is made partially amorphous; a crystal part is left in one part. In the formation method of a seed, a stepped part 2 is formed in the substratum material 1, the crystal film 3 is then formed, and ions are then implanted into the whole surface of the crystal film 3. For example, a quartz substrate 1 is etched, a stepped part 2 at a difference in height of 2000Angstrom is formed; after that, a crystal Si film 3 in a film thickness of 2000Angstrom is formed by a low-pressure chemical vapor deposition method. Then, As ions are implanted uniformly from the upper part of the crystal Si film 3 under prescribed conditions. Then, a crystal region is left as a seed near an edge part at the lower part of the stepped part 2.

    POLISHING DEVICE
    28.
    发明专利
    POLISHING DEVICE 审中-公开

    公开(公告)号:JP2002331445A

    公开(公告)日:2002-11-19

    申请号:JP2002083951

    申请日:2002-03-25

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To provide a polishing device for simplifying a process, quickly polishing a sample without the possibility of damage, and capable of accurately controlling the thickness of the sample. SOLUTION: This polishing device uses ultrasonic vibration without using translation and rotary motion as driving force for polishing a solid surface, and is characterized in that two ultrasonic vibration bodies are arranged in a state of being fixed to a solid above and below the solid by facing each other in a vertical position, a surface opposed to the solid of either one ultrasonic vibration body has a curved surface shape, the two ultrasonic vibrating bodies vibrate by respectively separate vibrators, an upper surface and an under surface of the solid arranged between the two ultrasonic vibration bodies are simultaneously polished by vibrating the respective ultrasonic vibration bodies, and at least one surface of the solid is polished as a free curved surface other than a plane.

    MULTI-CHANNEL PLATE AND ITS MANUFACTURING METHOD

    公开(公告)号:JP2002117801A

    公开(公告)日:2002-04-19

    申请号:JP2000307240

    申请日:2000-10-06

    Applicant: CANON KK

    Abstract: PROBLEM TO BE SOLVED: To provide a multi-channel plate having a high precision and a large area. SOLUTION: This has a substrate 1 to contain aluminum having the first principal face and the second principal face opposing to the first principal face, multiple micropores 6 arranged so as to penetrate the substrate 1, an electronic multiplying face 3 to emit secondary electrons by collision of electrons, and electrodes 4, 5 installed at the first principal face and the second principal face, respectively.

    CONVERGED ION BEAM PROCESSING APPARATUS

    公开(公告)号:JPH07273087A

    公开(公告)日:1995-10-20

    申请号:JP5649494

    申请日:1994-03-28

    Applicant: CANON KK

    Inventor: AEBA TOSHIAKI

    Abstract: PURPOSE:To provide a converged ion beam processing apparatus which can measure a fine processed width accurately and, further, when the processed width reaches a predetermined value, stops the processing operation automatically. CONSTITUTION:An ion beam 2 is applied to a sample 3 by an ion optical system 1 to process the sample 3 and, further, an energy beam 14 is applied to the processed surface 5 and an energy output 16 corresponding to a processed width part 22 is detected by a detection system 18 and transmitted to a control system 20 to control the processing.

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