Distance measurement
    21.
    发明专利

    公开(公告)号:GB2167262A

    公开(公告)日:1986-05-21

    申请号:GB8526374

    申请日:1985-10-25

    Applicant: CANON KK

    Abstract: A device for measuring the distance to an object 9 includes an illumination optical system 1 to 8 for producing a light beam and for irradiating the object 9 with the light beam, an optical system 8 for focusing the light beam, a focus position controlling system 5 operative to change the position at which the light beam is focused by the focusing optical system 8, a first detecting device 10 for receiving the light beam reflected from the object to detect the state of focus of the light beam incident on the object 9, and a processing unit 11 for detecting the distance to the object 9 on the basis of output of detecting device 10. Changing the position of the focus of the light beam allows the detection range of the device to be effectively multiplicated, giving rise to a greatly increased overall detection range.

    X-RAY TRANSFER DEVICE AND METHOD
    22.
    发明专利

    公开(公告)号:JPH07209876A

    公开(公告)日:1995-08-11

    申请号:JP1248195

    申请日:1995-01-30

    Applicant: CANON KK

    Abstract: PURPOSE:To provide an X-ray transfer device and method capable of effectively utilizing energy from an X-ray source for irradiation of a mask. CONSTITUTION:The mask 16 is precisely aligned to the first region I of a wafer 12 having plural irradiation regions (I, II, III, IV). The mask 16 and the wafer 12 aligned to shield the X-rays in such a manner that the regions exclusive of the first region I is not irradiated with the X-rays are moved relatively to the X-rays for irradiation and are subjected to irradiation under scanning, thereby, the patterns of the mask are exposed and transferred to the first region I of the wafer. Similarly, the stage for the aligning and scan exposing is successively repeated with the second region II and subsequent regions of the wafer to transfer the mask patterns to the respective plural regions of the wafer.

    REDUCTION PROJECTION ALIGNER AND MANUFACTURE OF SEMICONDUCTOR

    公开(公告)号:JPH07147230A

    公开(公告)日:1995-06-06

    申请号:JP18341494

    申请日:1994-08-04

    Applicant: CANON KK

    Abstract: PURPOSE:To provide a new aligner capable of making the reduction of manufacturing cost compatible with the improvement of productivity. CONSTITUTION:The title reduction projection aligner consists of the following; a mask stage 1 for retaining a mask on which a transfer pattern is formed, wafer stages 50, 51, 52 for retaining a wafer, an illuminating means for illuminating the mask retained by the mask stage with an exposure light, reduction projection optical systems M1, M2, M3 which reduction-project the transfer pattern of the illuminated mask on the wafer, and contain a plurality of reflection surfaces wherein at least one out of the reflection surfaces is not spherical, and means which controls at least the moving of the mask stage 1 so that the reduction transfer pattern of the mask is sequentially exposed and transfered to a plurality of regions of the wafer.

    X-RAY PROJECTION ALIGNER
    24.
    发明专利

    公开(公告)号:JPH07147229A

    公开(公告)日:1995-06-06

    申请号:JP18341294

    申请日:1994-08-04

    Applicant: CANON KK

    Abstract: PURPOSE:To realize high resolution of submicron order and enable high precision printing, by hermetically accommodating an X-ray projection optical system and vacuumizing it which system contains a plurality of X-ray reflecting surfaces having a finite curvatures which project the transfer pattern of a mask illuminated with X-rays on a wafer. CONSTITUTION:An mask MS is illuminated with X-rays outputted from an X-ray source. The image of a circuit pattern of the mask MS is formed in a specific region on a wafer W through a projection optical system constituted of a light conducting member 3 and reflecting mirrors M0, M1, M2, M3. In order to perform exposure by using X-rays, the inside of an equipment is vacuumized by using an exhaust means like a vacuum pump or the like, and exposure is performed under the condition from high vacuum to ultra-high vacuum. Thereby the attenuation of X-rays at the time of exposure is reduced, and the x-rays can be effectively used, so that exposure transfer which is more precise than the prior art is enabled.

    ALIGNER
    25.
    发明专利
    ALIGNER 失效

    公开(公告)号:JPH0758009A

    公开(公告)日:1995-03-03

    申请号:JP15850394

    申请日:1994-07-11

    Applicant: CANON KK

    Abstract: PURPOSE:To provide a vertical aligner which can accurately position by an effective and stable operating mechanism. CONSTITUTION:The aligner comprises a main frame MF, a sub-frame SF, stages XS, Y1S, Y2S held in the sub-frame SF and movable in a direction including a vertical component, means Y1M, Y2M, XM for relatively moving the stages to exposure luminous flux EX to be introduced substantially from a horizontal direction, wherein the sub-frame is supported in the main frame through support means MF1R, MF1L, MF2R, MF2L.

    ALIGNER
    26.
    发明专利
    ALIGNER 失效

    公开(公告)号:JPH0758007A

    公开(公告)日:1995-03-03

    申请号:JP15850194

    申请日:1994-07-11

    Applicant: CANON KK

    Abstract: PURPOSE:To provide a vertical aligner which can accurately position by an effective and stable operating mechanism. CONSTITUTION:The aligner comprises stages XS, Y1S, Y2S movable in a direction including a vertical component, gravity compensating means having constant tension spring mechanisms Y1BR, Y2BR, Y1BL, Y2BL for suspending the stages to gravity-compensate and belts Y1SR, Y1SL, and means Y1M, Y2M, XM for relatively moving the stages to exposure luminous flux EX to be introduced substantially from a horizontal direction.

    MASK STRUCTURE FOR LITHOGRAPHY
    27.
    发明专利

    公开(公告)号:JPS63196036A

    公开(公告)日:1988-08-15

    申请号:JP2708687

    申请日:1987-02-10

    Applicant: CANON KK

    Abstract: PURPOSE:To make it possible to set the alignment and the gap of the material to be processed in a highly precise manner by a method wherein a plurality of through holes through which energy rays can be passed are provided on a mask material retaining thin film, and a reflection layer pattern is provided in the vicinity of the through holes on the rear of the mask material retaining thin film. CONSTITUTION:A plurality of through holes 5, through which energy rays to be used for detection of the alignment condition with the material to be processed are passed, are provided on the mask material retaining thin film 2 of the mask structure to be used for lithography, and a reaction layer pattern 6 to be used for detection of an alignment condition is formed in the vicinity of the through holes 5 on the rear of the mask material retaining thin film 2. Consequently, the irradiation of energy rays can be performed through these through holes 5 provided on the mask material retaining thin film 2. As the reflection from the material to be processed can be detected in the state wherein the degree of scattering, absorption and the like of the energy rays is small, the alignment and the gap can be set in a highly precise manner.

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