公开(公告)号：DE3277998D1

公开(公告)日：1988-02-18

申请号：DE3277998

申请日：1982-06-29

Applicant: IBM

Inventor： BHATIA HARSARAN SINGH ,  EARDLEY DAVID BARRY ,  GAUR SANTOSH PRASAD

IPC: G11C11/34 ,  H01L27/102 ,  H01L27/10

Abstract: A single device dynamic semiconductor memory is formed having a P-type conductivity injector region (72) with high-low-high junctions of N-type conductivity disposed below the injector region. Those junctions trap injected minority charges which are detected by sensing the current flow from a source region (68) to a drain regions (51) which are located on opposite sides of the injector region (72). The source (68) and injector region (72) utilize ohmic contact while the low barrier Schottky contact (80) is made to the drain region (51). In order to provide separation between the depletion region of the Schottky contact (80) and the injector region (72), a heavily doped N (22) region is provided.

公开(公告)号：DE3160804D1

公开(公告)日：1983-10-06

申请号：DE3160804

申请日：1981-02-25

Applicant: IBM

Inventor： ANANTHA NARASIPUR GUNDAPPA ,  BHATIA HARSARAN SINGH

IPC: H01L21/306 ,  H01L21/033 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/329 ,  H01L29/47 ,  H01L29/872 ,  H01L21/60 ,  H01L21/31 ,  H01L29/48 ,  H01L29/91

公开(公告)号：DE2654416A1

公开(公告)日：1977-07-07

申请号：DE2654416

申请日：1976-12-01

Applicant: IBM

Inventor： BHATIA HARSARAN SINGH ,  CALHOUN HARRY CHARLES ,  MELHADO ROBERT LEONARD ,  SCHNITZEL RANDOLPH HUFF

IPC: H01L29/872 ,  H01L21/28 ,  H01L21/285 ,  H01L29/47 ,  H01L21/24 ,  H01L29/48