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公开(公告)号：DE3067439D1
公开(公告)日：1984-05-17
申请号：DE3067439
申请日：1980-07-31
Applicant: IBM
Inventor： GARTNER HELMUT MATTHEW , PETVAI STEVE ISTVAN , SARKARY HOMI GUSTADJI , SCHNITZEL RANDOLPH HUFF
IPC: H01L21/302 , C23F4/00 , H01L21/263 , H01L21/3065 , H01L21/3213 , H01L21/31
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公开(公告)号：DE2355567A1
公开(公告)日：1974-06-12
申请号：DE2355567
申请日：1973-11-07
Applicant: IBM
Inventor： GREER STUART EUGENE , SCHNITZEL RANDOLPH HUFF , WALDMAN DAVID PHILLIP
IPC: H01L21/768 , H01L21/00 , H01L21/28 , H01L21/285 , H01L23/485 , H01L23/522 , H01L1/14
Abstract: A method of fabricating an improved aluminum metallurgy system of conductive stripes on a monocrystalline silicon semiconductor device that makes electrical contact with the body of the device through at least one opening in an insulating layer, wherein there is formed a blanket layer of aluminum over the insulating layer which makes contact through the monocrystalline body of silicon through at least one opening, a thin blanket layer of silicon is deposited over the layer of aluminum, selected portions of the aluminum and silicon layers are removed to define an interconnection metallurgy system, and a passivating layer of insulating material is formed over the metallurgy system. The resultant semiconductor device is capable of withstanding heat for prolonged periods of time at temperatures of up to 577 DEG C without undergoing significant aluminum penetration into the silicon body since the silicon on the overlying layer satisfies the silicon solubility requirements of the aluminum.
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公开(公告)号：DE2654416A1
公开(公告)日：1977-07-07
申请号：DE2654416
申请日：1976-12-01
Applicant: IBM
Inventor： BHATIA HARSARAN SINGH , CALHOUN HARRY CHARLES , MELHADO ROBERT LEONARD , SCHNITZEL RANDOLPH HUFF
IPC: H01L29/872 , H01L21/28 , H01L21/285 , H01L29/47 , H01L21/24 , H01L29/48
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公开(公告)号：DE2233427A1
公开(公告)日：1973-03-08
申请号：DE2233427
申请日：1972-07-07
Applicant: IBM
Inventor： DHEER RAJENDRA KUMAR , GIDDINGS JAMES JOSEPH , SCHNITZEL RANDOLPH HUFF
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