公开(公告)号：CA2327167A1

公开(公告)日：2002-05-30

申请号：CA2327167

申请日：2000-11-30

Applicant: IBM CANADA

Inventor： CHAN VICTOR ,  WANG FEN ,  HUBBARD MARK W ,  CHIN HOWARD CHUN

IPC: G06F17/30

Abstract: A system and method of composing a query object for application against a database is provided. The method composes a selection clause for the query. Next, a criteria clause for the query is generated, with the criteria clause comprising input criteria relat ed to the query and additional criteria specified against the query and generated criteria based on a joint relationship. Next a source clause utilizing elements in the database accessed by the quer y is generated. A database traversal system and method is provided. The method identifies all tables directly accessible by each table and creating a data structure comprising an entry for each table. The entry comprises an identification field for each table and a link field identifying the all tables directly accessible by each table. The data structure is traversed and an optimum path of the traversal paths utilizing data obtained from traversing the data structure is identified.

公开(公告)号：DE602004024448D1

公开(公告)日：2010-01-14

申请号：DE602004024448

申请日：2004-12-15

Applicant: IBM

Inventor： CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

IPC: H01L29/02 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/786 ,  H01L31/109

Abstract: The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.

公开(公告)号：SG155895A1

公开(公告)日：2009-10-29

申请号：SG2009059312

申请日：2006-10-17

Applicant: CHARTERED SEMICONDUCTOR MFG ,  IBM

Inventor： MENG LEE YONG ,  YANG HAINING S ,  CHAN VICTOR

Abstract: A structure and method of fabrication of a semiconductor device having a stress relief layer under a stress layer in one region of a substrate. In a first example, a stress relief layer is formed over a first region of the substrate (e.g., PFET region) and not over a second region (e.g., NFET region). A stress layer is over the stress relief layer in the first region and over the devices and. substrate/silicide in the second region. The NFET transistor performance is enhanced due to the overall tensile stress in the NFET channel while the degradation in the PFET transistor performance is reduced/eliminated due to the inclusion of the stress relief layer. In a second example embodiment, the stress relief laver is formed over the second region, but not the first region and the stress of the stress layer is reversed.

公开(公告)号：SG133480A1

公开(公告)日：2007-07-30

申请号：SG2006072250

申请日：2006-10-17

Applicant: CHARTERED SEMICONDUCTOR MFG ,  IBM

Inventor： YONG LIM KHEE ,  CHAN VICTOR ,  HUA LIM ENG ,  WENHE LIM ,  FEN JAMIN F

Abstract: A method for forming a device with both PFET and NFET transistors using a PFET compressive etch stop liner and a NFET tensile etch stop liner and two anneals in a deuterium containing atmosphere. The method comprises: providing a NFET transistor in a NFET region and a PFET transistor in a PFET region. We form a NFET tensile contact etch-stop liner over the NFET region. Then we perform a first deuterium anneal. We form a PFET compressive etch stop liner over the PFET region. We form a (ILD) dielectric layer with contact openings over the substrate. We perform a second deuterium anneal. The temperature of the second deuterium anneal is less than the temperature of the first deuterium anneal.

公开(公告)号：CA2379090A1

公开(公告)日：2003-09-27

申请号：CA2379090

申请日：2002-03-27

Applicant: IBM CANADA

Inventor： KHUSIAL DRASHANAND ,  HUBBARD MARK W ,  CHAN VICTOR ,  FOK MADELINE KIT YIN

IPC: H04L29/06 ,  H04L29/08 ,  H04L29/02 ,  H04L12/24

Abstract: A system and method for handling multiple identical requests received by a server from a client by a web application server. When multiple requests for the same URL are received by a web application server from the same client browser which results in the allocation of multiple threads on the server to handle the requests, a response to the client is obtained from the processing carried out by the first thread launched by the web application server. Results of t he initial thread are passed to the client using the last opened connection between the client and server relating to the client's request for the URL. Other threads are placed in a wait state and are deallocated, at the earliest opportunity, where possible.

公开(公告)号：CA2328033A1

公开(公告)日：2002-06-12

申请号：CA2328033

申请日：2000-12-12

Applicant: IBM CANADA

Inventor： HUBBARD MARK W ,  CHAN VICTOR ,  FOK KIT YIN MADELINE

IPC: G06F3/14 ,  G06Q30/00 ,  G06F17/60 ,  H04L12/16 ,  G06F17/30

Abstract: A system method of interfacing a computer system executing commercial transactions initiated from communication devices, each communication device having a display, with custom display parameters, is provided. For the system and method, at the computer system, for each device, a command is received and translated into a common format command. The common format command is executed and results therefrom are received. A database is access ed having elements identifying sets of display parameters, one set of the sets is for use with the custom display parameters. One set of display parameters is retrieved from the database.