公开(公告)号：WO2006057645A8

公开(公告)日：2006-08-03

申请号：PCT/US2004042179

申请日：2004-12-15

Applicant: IBM ,  CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

Inventor： CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

IPC: H01L29/02 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/786 ,  H01L31/109

CPC classification number: H01L29/7842 ,  H01L21/823807 ,  H01L29/045 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7846 ,  H01L29/78684

Abstract: The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.

Abstract translation: 本发明提供具有增强的电子和空穴迁移率的半导体材料，其包含具有110晶向和双向压缩应变的含有层。 术语“双轴压缩应力”在本文中用于描述由在制造半导体材料期间在含Si层上感应的纵向压缩应力和横向应力引起的净应力。 本发明的另一方面涉及一种形成本发明的半导体材料的方法。 本发明的方法包括提供含硅110层的步骤; 并在含硅110层中产生双轴应变。

公开(公告)号：WO2006057645A3

公开(公告)日：2006-11-30

申请号：PCT/US2004042179

申请日：2004-12-15

Applicant: IBM ,  CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

Inventor： CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

IPC: H01L29/02 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/786 ,  H01L31/109

CPC classification number: H01L29/7842 ,  H01L21/823807 ,  H01L29/045 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7846 ,  H01L29/78684

Abstract: The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.

公开(公告)号：WO2006057645A9

公开(公告)日：2006-09-14

申请号：PCT/US2004042179

申请日：2004-12-15

Applicant: IBM ,  CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

Inventor： CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

IPC: H01L29/02 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/786 ,  H01L31/109

CPC classification number: H01L29/7842 ,  H01L21/823807 ,  H01L29/045 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7846 ,  H01L29/78684

Abstract: The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a -containing layer having a 110 crystal orientation and a biaxial compressive strain. The term ''biaxial compressive stress'' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.

公开(公告)号：DE602004024448D1

公开(公告)日：2010-01-14

申请号：DE602004024448

申请日：2004-12-15

Applicant: IBM

Inventor： CHAN VICTOR ,  FISCHETTI MASSIMO V ,  HERGENROTHER JOHN M ,  LEONG MEIKEI ,  RENGARAJAN RAJESH ,  REZNICEK ALEXANDER ,  SOLOMON PAUL ,  SUNG CHUN-YUNG ,  YANG MIN

IPC: H01L29/02 ,  H01L21/762 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/786 ,  H01L31/109

Abstract: The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing layer; and creating a biaxial strain in the silicon-containing layer.