公开(公告)号：ES2134370T3

公开(公告)日：1999-10-01

申请号：ES95104274

申请日：1988-03-04

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN NMN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LACEY JAMES ANDREW ,  LAIBOWITZ ROBERT BENJAMIN ,  VIGGIANO JOSEPH MICHAEL

IPC: C30B1/02 ,  C01G1/00 ,  C01G3/00 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

公开(公告)号：DE69030247D1

公开(公告)日：1997-04-24

申请号：DE69030247

申请日：1990-12-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  PATTON GARY LEE ,  SAI-HALASZ GEORGE ANTHONY ,  STORK JOHANNES M CORNELIUS

IPC: H01L29/165 ,  H01L21/331 ,  H01L23/532 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L39/22 ,  H01L39/24

公开(公告)号：DE19515347C2

公开(公告)日：1997-04-17

申请号：DE19515347

申请日：1995-04-26

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  GRILL ALFRED ,  KANE WILLIAM FRANCIS ,  MIKALSEN DONALD JOSEPH

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01G4/008 ,  H01G4/12

公开(公告)号：DE69030074D1

公开(公告)日：1997-04-10

申请号：DE69030074

申请日：1990-12-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  GANIN ETI ,  SAI-HALASZ GEORGE ANTHONY ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN ,  WORDEMAN MATTHEW ROBERT

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L39/02 ,  H01L39/22 ,  H01L39/24

公开(公告)号：DE19515347A1

公开(公告)日：1995-11-02

申请号：DE19515347

申请日：1995-04-26

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  GRILL ALFRED ,  KANE WILLIAM FRANCIS ,  MIKALSEN DONALD JOSEPH

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01G4/008 ,  H01G4/12

Abstract: The electrode structure (10) includes a substrate (26) with a free surface semiconductor layer (27), metal (31) and metal oxide (32) layers. The metal layer is formed from a chosen one of the group Ru, Ir, Re, Rh, Os, Pd. The metal oxide layer is chosen from the same metallic group as the initial metal. A further metallic layer (33) over the oxide layer is formed of metal from the same group. The semiconductor layer is of Silicon or Germanium. Included above the metal and metal oxide layers is a further layer having a high dielectric constant (16). The dielectric material is an oxide of ferroelectric or para-electric material such as BaxSr(1-x)TiO3 or PbZr3Ti(1-x)O3 and a fifth layer of conducting material.

公开(公告)号：DE3171156D1

公开(公告)日：1985-08-08

申请号：DE3171156

申请日：1981-01-08

Applicant: IBM

Inventor： GAMBINO RICHARD JOSEPH ,  TAYLOR ROBERT CHARLES

IPC: G11C11/14 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/18 ,  H01F10/187 ,  H01F10/32 ,  G11C19/08

Abstract: Amorphous ferrimagnetic layers are described with support stable and mobile magnetic charged walls. These layers can be used as drive layers in magnetic bubble domain devices, and are characterized by very weak even-fold in-plane anisotropy, or substantially zero in-plane anisotropy. The layers are metallic alloy compositions having magnetic properties that can be tailored over wide ranges, and are particularly suitable as drive layers for the propagation of bubble domains of extremely small diameters.

公开(公告)号：FI57673C

公开(公告)日：1980-09-10

申请号：FI269373

申请日：1973-08-29

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH

IPC: G02F1/09 ,  C22C19/00 ,  C22C45/04 ,  G02F1/00 ,  G11B11/10 ,  G11B11/105 ,  G11C11/14 ,  G11C13/06 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/16 ,  H01F10/10

公开(公告)号：DE2536264A1

公开(公告)日：1976-03-18

申请号：DE2536264

申请日：1975-08-14

Applicant: IBM

Inventor： GAMBINO RICHARD JOSEPH ,  HOLTZBERG FREDERIC ,  RUF RALPH RICHARD ,  WELBER BENJAMIN

IPC: G11C17/00 ,  G11B7/243 ,  G11C13/00 ,  G11C13/04 ,  G11B11/12 ,  G03C1/72

Abstract: 1496029 Vapour depositing data storage layers INTERNATIONAL BUSINESS MACHINES CORP 8 Aug 1975 [9 Sept 1974] 33108/75 Heading C7F A digital data storage device for recording information by a laser beam comprises two layers which react with each other when subjected to the beam and a barrier layer which prevents reaction of the two layers in the absence of the beam. The reactive materials may be Al-Se, Zn-Se, Bi-Se, As-Se, Mn-Bi, (In-Ga)-As, and the barrier layer Al 2 Se 3 , Al 2 O 3 , ZnSe, BiSe 3 , As 2 Se 3 , MnBi, Ga 1-x In x As. The layers may be vapour deposited on a glass or plastics substrate and the compounds formed by co-evaporation.

公开(公告)号：DE2340475A1

公开(公告)日：1974-04-04

申请号：DE2340475

申请日：1973-08-10

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  MCGUIRE RHOMAS ROCHE ,  CHAUDHARI PRAVEEN

IPC: G11C11/14 ,  G11B11/10 ,  G11B11/105 ,  G11B11/11 ,  G11C13/06 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  G11C13/04 ,  G11B5/62 ,  G11B7/24

公开(公告)号：AT183021T

公开(公告)日：1999-08-15

申请号：AT95104274

申请日：1988-03-04

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LACEY JAMES ANDREW ,  LAIBOWITZ ROBERT BENJAMIN ,  VIGGIANO JOSEPH MICHAEL

IPC: C30B1/02 ,  C01G1/00 ,  C01G3/00 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24