公开(公告)号：GB2508376A

公开(公告)日：2014-06-04

申请号：GB201221502

申请日：2012-11-29

Applicant: IBM

Inventor： GOTSMANN BERND W ,  KARG FRIEDRICH SIEGFRIED ,  LOERTSCHER EMANUEL ,  RIEL HEIKE E ,  SIGNORELLO GIORGIO

IPC: G01J3/02 ,  B82Y20/00 ,  G01J3/12 ,  H01L31/0352 ,  H01L31/105

Abstract: An optical spectrometer 1 comprises a photodiode 2 and a straining mechanism 4 for imposing adjustable strain on the photodiode. The spectrometer l includes measurement apparatus 7 for measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism 4. Adjusting the strain allows adjustment of the band gap Eg of the photosensitive region of the photodiode 1, and this determines the cut-off energy for absorption of photons. Measuring variation of photocurrent with strain at different values of the adjustable strain imposed by the straining mechanism allows study of photons within a desired energy range of the band gap energy corresponding to each strain value. The photodiode 2 may comprise a PIN photodiode formed in a nanowire as a radial or axial heterostructure. A polarizer 6 may be adapted to transmit a predetermined polarized component of incident light to the photodiode. The polarizer 6 may comprise a coating on the photodiode.

公开(公告)号：GB2500831A

公开(公告)日：2013-10-02

申请号：GB201310312

申请日：2011-11-02

Applicant: IBM

Inventor： GOTSMANN BERND W ,  KARG SIEGFRIED FRIEDRICH ,  RIEL HEIKE E

IPC: H01L29/423 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Nanowire devices (7, 14, 25, 38, 40) are provided together with methods for forming such devices. The methods comprise forming a stressor layer (6, 13, 23, 33) circumferentially surrounding a semiconductor nanowire (1, 10, 20, 30). The methods are performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

公开(公告)号：DE112011103806T5

公开(公告)日：2013-08-08

申请号：DE112011103806

申请日：2011-11-02

Applicant: IBM

Inventor： GOTSMANN BERND W ,  KARG SIEGFRIED FRIEDRICH ,  RIEL HEIKE E

IPC: H01L29/66 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/775

Abstract: Es werden Nanodrahteinheiten (7, 14, 25, 38, 40) zusammen mit Verfahren zum Bilden solcher Einheiten bereitgestellt. Die Verfahren weisen das Bilden einer Stressorschicht (6, 13, 23, 33) auf, die einen Halbleiter-Nanodraht (1, 10, 20, 30) außen umgibt. Die Verfahren werden so durchgeführt, dass der Nanodraht aufgrund der Stressorschicht einer radialen und/oder longitudinalen Spannung ausgesetzt wird, um die Beweglichkeit der Ladungsträger in dem Nanodraht zu erhöhen. Die radiale und longitudinale Spannungskomponente können einzeln oder zusammen genutzt werden, und jede kann als Zug- oder Druckspannung erzeugt werden, sodass gewünschte Spannungseigenschaften für eine erhöhe Leitfähigkeit in dem Nanodraht einer bestimmten Einheit definiert werden können.

公开(公告)号：CA2819469A1

公开(公告)日：2012-05-24

申请号：CA2819469

申请日：2011-11-02

Applicant: IBM

Inventor： GOTSMANN BERND W ,  KARG SIEGFRIED FRIEDRICH ,  RIEL HEIKE E

IPC: H01L29/66 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/775

Abstract: Nanowire devices (7, 14, 25, 38, 40) are provided together with methods for forming such devices. The methods comprise forming a stressor layer (6, 13, 23, 33) circumferentially surrounding a semiconductor nanowire (1, 10, 20, 30). The methods are performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

公开(公告)号：CA2743117A1

公开(公告)日：2010-08-05

申请号：CA2743117

申请日：2010-01-22

Applicant: IBM

Inventor： DUERIG URS T ,  GOTSMANN BERND W ,  HEDRICK JAMES L ,  KNOLL ARMIN W ,  PIRES DAVID

IPC: G03F7/00 ,  G01Q80/00 ,  G11B9/00

Abstract: Probe-based methods for patterning a surface of a material are described. In particular, high resolution patterning of molecules on a surface of a material, such as nano-scale patterns with feature sizes of less than 30 nanometers, are described. In one aspect, a method for patterning a surface of a material includes providing a material having a polymer film. A heated, nano-scale dimensioned probe is then used to desorb molecules upon interacting with the film. The film includes a network of molecules (such as molecular glasses) which are cross-linked via intermolecular (noncovalent) bonds, such as hydrogen bonds.