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公开(公告)号：DE69132027T2
公开(公告)日：2000-09-14
申请号：DE69132027
申请日：1991-12-09
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE ALVIN , LAMBERT STEVEN EUGENE , MAURI DANIELE , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：CA2060561C
公开(公告)日：1998-05-05
申请号：CA2060561
申请日：1992-02-03
Applicant: IBM
Inventor： ROCHE KEVIN PATRICK , PARKIN STUART STEPHEN PAPWORTH
Abstract: A magnetoresistive (MR) sensor comprising a multilayered structure formed on a substrate includes alternating layers of a ferromagnetic material and a non-magnetic metallic material. The ferromagnetic material and the non-magnetic material form bilayers which exhibit the property that the magnetoresistance of the multilayered structure oscillates as a function of thickness of the non-magnetic material. A current flow is produced through the MR sensor, and the variations in the resistivity of the MR sensor are sensed as a function of the magnetic field being sensed.
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公开(公告)号：DE69216868D1
公开(公告)日：1997-03-06
申请号：DE69216868
申请日：1992-02-07
Applicant: IBM
Inventor： DIENY BERNARD , CURNEY BRUCE ALVIN , METIN SERHAT , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON
Abstract: A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate (11) includes a first (12) and a second (16) thin film layer (14) of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material formed of either cobalt or a cobalt alloy. The magnetization direction of the first ferromagnetic layer, at zero applied field, is set substantially perpendicular to the magnetization direction of the second ferromagnetic layer which is fixed in position. A current flow is produced through the sensor, and the variations in voltage across the MR sensor are sensed due to the changes in resistance produced by rotation of the magnetization in the front layer of ferromagnetic material as a function of the magnetic field being sensed.
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公开(公告)号：DE68907956D1
公开(公告)日：1993-09-09
申请号：DE68907956
申请日：1989-02-16
Applicant: IBM
Inventor： ENGLER EDWARD MARTIN , LEE VICTOR YEE-WAY , NAZZAL ADEL ISSA , PARKIN STUART STEPHEN PAPWORTH
Abstract: Stable, bulk electrical superconductors are prepared by heating mixed metal oxides in the presence of oxygen in a closed vessel in a preheated oven for 1-5 hours at 850-900 DEG C. The final oxides are in the molar ratio Tl0.6-1.1Ca2-3Ba0.75-1.25Cu2-3O(5+ delta )-(9+ delta ), where delta is less than one.
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公开(公告)号：GB2201955B
公开(公告)日：1991-09-18
申请号：GB8801770
申请日：1988-01-15
Applicant: IBM
Inventor： BEYERS ROBERT BRUCE , ENGLER EDWARD MARTIN , GRANT PAUL MICHAEL , LIM GRACE SU , PARKIN STUART STEPHEN PAPWORTH
Abstract: Compositions having the formula A1+/-xM2+/-xCu3Oy, wherein A is Y, or a combination of Y La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800 DEG C and about 1100 DEG C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.
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Patent Agency Ranking
公开(公告)号：GB2201955A
公开(公告)日：1988-09-14
申请号：GB8801770
申请日：1988-01-15
Applicant: IBM
Inventor： BEYERS ROBERT BRUCE , ENGLER EDWARD MARTIN , GRANT PAUL MICHAEL , LIM GRACE SU , PARKIN STUART STEPHEN PAPWORTH
Abstract: Compositions having the formula A1+/-xM2+/-xCu3Oy, wherein A is Y, or a combination of Y La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800 DEG C and about 1100 DEG C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.
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公开(公告)号：DE69132027D1
公开(公告)日：2000-04-13
申请号：DE69132027
申请日：1991-12-09
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE ALVIN , LAMBERT STEVEN EUGENE , MAURI DANIELE , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：DE3888217T2
公开(公告)日：1994-09-22
申请号：DE3888217
申请日：1988-01-29
Applicant: IBM
Inventor： BEYERS ROBERT BRUCE , ENGLER EDWARD MARTIN , GRANT PAUL MICHAEL , LIM GRACE SU , PARKIN STUART STEPHEN PAPWORTH
Abstract: Compositions having the formula A1+/-xM2+/-xCu3Oy, wherein A is Y, or a combination of Y La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800 DEG C and about 1100 DEG C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.
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公开(公告)号：DE3888217D1
公开(公告)日：1994-04-14
申请号：DE3888217
申请日：1988-01-29
Applicant: IBM
Inventor： BEYERS ROBERT BRUCE , ENGLER EDWARD MARTIN , GRANT PAUL MICHAEL , LIM GRACE SU , PARKIN STUART STEPHEN PAPWORTH
Abstract: Compositions having the formula A1+/-xM2+/-xCu3Oy, wherein A is Y, or a combination of Y La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800 DEG C and about 1100 DEG C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.
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公开(公告)号：MY114962A
公开(公告)日：2003-02-28
申请号：MYPI9804348
申请日：1998-09-22
Applicant: IBM
Abstract: A MAGNETIC TUNNEL JUNCTION (MTJ) MAGNETORESISTIVE READ HEAD FOR A MAGNETIC RECORDING SYSTEM HAS THE MTJ SENSING OR FREE FERROMAGNETIC LAYER (132) ALSO FUNCTIONING AS A FLUX GUIDE TO DIRECT MAGNETIC RECORDING MEDIUM TO THE TUNNEL JUNCTION. THE MTJ FIXED FERROMAGNETIC LAYER (118) HAS ITS FRONT EDGE RECESSED FROM THE SENSING SURFACE (200) OF THE HEAD. BOTH THE FIXED AND FREE FERROMAGNETIC LAYERS ARE IN CONTACT WITH OPPOSITE SURFACES OF THE MTJ TUNNEL BARRIER LAYER (120) BUT THE FREE FERROMAGNETIC LAYER EXTENDS BEYOND THE BACK EDGE (208, 212) OF EITHER THE TUNNEL BARRIER LAYER OR THE FIXED FERROMAGNETIC LAYER, WHICHEVER BACK EDGE IS CLOSER TO THE SENSING SURFACE. THIS ASSURES THAT THE MAGNETIC FLUX IS NON-ZERO IN THE TUNNEL JUNCTION REGION. THE MAGNETIZATION DIRECTION OF THE FIXED FERROMAGNETIC LAYER IS FIXED IN A DIRECTION GENERALLY PERPENDICULAR TO THE SENSING SURFACE AND THUS TO THE MAGNETIC RECORDING MEDIUM, PREFERABLY BY INTERFACIAL EXCHANGE COUPLING WITH AN ANTIFERROMAGNETIC LAYER. THE MAGNETIZATION DIRECTION OF THE FREE FERROMAGNETIC LAYER IS ALIGNED IN A DIRECTION GENERALLY PARALLEL TO THE SURFACE OF THE MEDIUM IN THE ABSENCE OF AN APPLIED MAGNETIC FIELD AND IS FREE TO ROTATE IN THE PRESENCE OF APPLIED MAGNETIC FIELDS FROM THE MEDIUM. A LAYER OF HIGH COERCIVITY HARD MAGNETIC MATERIAL ADJACENT THE SIDES OF THE FREE FERROMAGNETIC LAYER LONGITUDINALLY BIASES THE MAGNETIZATION OF THE FREE FERROMAGNETIC LAYER IN THE PREFERRED DIRECTION.
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