公开(公告)号：DE3171252D1

公开(公告)日：1985-08-08

申请号：DE3171252

申请日：1981-10-29

Applicant: IBM

Inventor： BARTHOLOMEW ROBERT FORBELL ,  GARBARINO PAUL LOUIS ,  GARDINER JAMES ROBERT ,  REVITZ MARTIN ,  SHEPARD JOSEPH FRANCIS

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/78 ,  H01L21/60

公开(公告)号：DE3165364D1

公开(公告)日：1984-09-13

申请号：DE3165364

申请日：1981-05-12

Applicant: IBM

Inventor： GARDINER JAMES ROBERT ,  MAKAREWICZ STANLEY RICHARD ,  REVITZ MARTIN ,  SHEPARD JOSEPH FRANCIS

IPC: H01L27/10 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/8242 ,  H01L23/532 ,  H01L27/108 ,  H01L29/43 ,  H01L29/78 ,  H01L23/52 ,  H01L21/90

Abstract: In double polysilicon devices direct shorts between overlying polysilicon conductors (3,7) due to a "polysilicon void phenomenon" are prevented by patterning an appropriate etch stop (5) between the conductors.