Patent search ap:("IBM") AND inv:"BARTHOLOMEW ROBERT FORBELL" Page 1

1.

发明专利
METHOD FOR MAKING AN ELECTRICAL CONTACT TO A SILICON SUBSTRATE THROUGH A RELATIVELY THIN LAYER OF SILICON DIOXIDE ON THE SURFACE OF THE SUBSTRATE AND METHOD FOR MAKING A FIELD EFFECT TRANSISTOR 未知

公开(公告)号：DE3171252D1

公开(公告)日：1985-08-08

申请号：DE3171252

申请日：1981-10-29

Applicant: IBM

Inventor： BARTHOLOMEW ROBERT FORBELL , GARBARINO PAUL LOUIS , GARDINER JAMES ROBERT , REVITZ MARTIN , SHEPARD JOSEPH FRANCIS

IPC: H01L21/28 , H01L21/285 , H01L29/78 , H01L21/60

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