公开(公告)号：CA2659479A1

公开(公告)日：2003-10-02

申请号：CA2659479

申请日：2003-02-19

Applicant: IBM

Inventor： MARTEL RICHARD ,  APPENZELLER JOERG ,  CHAN KEVIN K ,  AVOURIS PHAEDON ,  WONG HON-SUM PHILIP ,  COLLINS PHILIP G

IPC: H01L21/18 ,  H01L29/16 ,  H01L29/772 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon-nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from the carbon-nanotube by a dielectric film [111].