公开(公告)号：EP1547165A4

公开(公告)日：2009-05-27

申请号：EP03773062

申请日：2003-09-26

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  COHEN GUY MOSHE ,  MARTEL RICHARD ,  MISEWICH JAMES A ,  TSANG JAMES CHEN-HSIANG

IPC: H01L51/05 ,  H01L51/30 ,  H01L51/52 ,  H01L33/00

CPC classification number: H01L51/52 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/938 ,  Y10S977/949

Abstract: A light emitting device comprises a gate electrode (101), a channel (103) comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode (101), a source (104) coupled to a first end of the channel injecting electrons into the channel, and a drain (105) coupled to a second end of the channel injecting holes into the channel.

公开(公告)号：WO02054505A3

公开(公告)日：2002-11-14

申请号：PCT/GB0105715

申请日：2001-12-21

Applicant: IBM ,  IBM UK

Inventor： AVOURIS PHAEDON ,  COLLINS PHILIP ,  MARTEL RICHARD

IPC: B82B3/00 ,  H01L21/00 ,  H01L21/82 ,  H01L29/06 ,  H01L29/15 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L51/30 ,  H01L51/20

CPC classification number: H01L51/0545 ,  B82Y10/00 ,  G11C2213/17 ,  G11C2213/18 ,  H01L51/0048 ,  H01L51/0512 ,  Y10S977/742 ,  Y10S977/845 ,  Y10S977/847 ,  Y10S977/888 ,  Y10S977/89 ,  Y10S977/896 ,  Y10S977/938

Abstract: A method is provided for forming a device. The method provides an insulating substrate including a source electrode, a drain electrode, and a gate electrode. The method provides carbon nanotube bundles including metallic and semiconducting component nanotubes in contact with the substrate. The method applies a voltage to the gate electrode to deplete the semiconducting component nanotubes of carriers, applies an electrical current through the nanotube, from a source electrode to a drain electrode, and breaks at least one metallic component nanotube to form a field effect transistor. The carbon nanotube bundle can be a multi-walled nanotube or a single-walled nanotube rope.

Abstract translation: 提供了一种用于形成装置的方法。 该方法提供了包括源电极，漏电极和栅电极的绝缘基板。 该方法提供了碳纳米管束，其包括与基底接触的金属和半导体组分纳米管。 该方法向栅电极施加电压以消耗载流子的半导体元件纳米管，从源电极向漏电极施加电流通过纳米管，并且断开至少一个金属成分纳米管以形成场效应晶体管。 碳纳米管束可以是多壁纳米管或单壁纳米管绳。

公开(公告)号：JP2011100972A

公开(公告)日：2011-05-19

申请号：JP2010191883

申请日：2010-08-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DAMON B FARMER ,  XIA FENGNIAN ,  AVOURIS PHAEDON

IPC: H01L29/786 ,  H01L21/336 ,  H01L51/05 ,  H01L51/30

CPC classification number: H01L29/4908 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/78684

Abstract: PROBLEM TO BE SOLVED: To utilize an organic buffer layer to fabricate a high performance carbon nanoelectronic device.
SOLUTION: A fabrication process for the nanoelectronic device and the device are provided. A channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on a polymer layer. A top gate metal is deposited on the top gate oxide.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：利用有机缓冲层制造高性能碳纳米电子器件。 解决方案：提供了一种用于纳米电子器件和器件的制造工艺。 通道材料沉积在衬底上以形成通道。 源极金属触点和漏极金属触点沉积在沟道材料上，源极金属触点和漏极金属触点位于沟道材料的相对端上。 多羟基苯乙烯衍生物沉积在通道材料上。 顶栅氧化物沉积在聚合物层上。 顶栅极金属沉积在顶栅氧化物上。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2006240898A

公开(公告)日：2006-09-14

申请号：JP2005055790

申请日：2005-03-01

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHEN JIA ,  ALI AFUZARI-ARUDAKANI ,  KLINKE CHRISTIAN ,  SOLOMON PAUL M ,  AVOURIS PHAEDON

IPC: C01B31/02 ,  H01L21/336 ,  H01L29/06 ,  H01L29/786 ,  H01L51/05

Abstract: PROBLEM TO BE SOLVED: To provide a method for doping carbon nanotube by a solution treatment, a semiconductor device and a method of forming the semiconductor device. SOLUTION: This doping method for carbon nanotube includes a process for exposing the carbon nanotube to a one-electron oxidizer in a solution phase. Further, there are provided a method of forming a carbon nanotube FET device and also a semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 解决的问题：提供一种通过固溶处理掺杂碳纳米管的方法，半导体器件和形成半导体器件的方法。 解决方案：用于碳纳米管的这种掺杂方法包括在溶液相中将碳纳米管暴露于单电子氧化剂的方法。 此外，提供了形成碳纳米管FET器件以及半导体器件的方法。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004207697A

公开(公告)日：2004-07-22

申请号：JP2003394630

申请日：2003-11-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  MARTEL RICHARD ,  MISEWICH JAMES ANTHONY ,  SCHROTT ALEJANDRO GABRIEL

IPC: B82B1/00 ,  G11C13/02 ,  H01L27/10 ,  H01L27/20 ,  H01L29/06 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C2213/16 ,  H01L27/20

Abstract: PROBLEM TO BE SOLVED: To provide a method and structure which easily determine a change in the conductivity of nanotube by considering problems, defects and demerits in conventional methods and structure, and by applying stress to nanotube structure. SOLUTION: As to structure (and a method) for a piezoelectric device including a piezoelectric material layer, the nanotube structure is attached so as to generate a stress change in the nanotube structure by a change in the shape of a piezoelectric material. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：WO2004030043A2

公开(公告)日：2004-04-08

申请号：PCT/US0330647

申请日：2003-09-26

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  COHEN GUY MOSHE ,  MARTEL RICHARD ,  MISEWICH JAMES A ,  TSANG JAMES CHEN-HSIANG

IPC: H01L51/05 ,  H01L51/30 ,  H01L51/52 ,  H01L

CPC classification number: H01L51/52 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/938 ,  Y10S977/949

Abstract: A light emitting device comprises a gate electrode (101), a channel (103) comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode (101), a source (104) coupled to a first end of the channel injecting electrons into the channel, and a drain (105) coupled to a second end of the channel injecting holes into the channel.

Abstract translation: 发光装置包括栅电极（101），包含用于电激发光发射的分子的通道（103），其中分子设置在栅电极（101）的有效范围内，源（104）耦合到 所述沟道的第一端将电子注入所述沟道中，以及与所述沟道的第二端连接的漏极（105）将空穴注入所述沟道中。

公开(公告)号：WO2011023603A3

公开(公告)日：2011-11-03

申请号：PCT/EP2010061986

申请日：2010-08-17

Applicant: IBM ,  XIA FENGNIAN ,  AVOURIS PHAEDON ,  MUELLER THOMAS ,  LIN YU-MING

Inventor： XIA FENGNIAN ,  AVOURIS PHAEDON ,  MUELLER THOMAS ,  LIN YU-MING

IPC: H01L51/42 ,  G02B6/122 ,  H01L51/44

CPC classification number: H01L51/428 ,  H01L29/1606 ,  H01L31/02327 ,  H01L31/035209 ,  H01L31/101 ,  Y02E10/549

Abstract: A photodetector which uses single or multi-layer graphene on a gate oxide layer (12) as the photon detecting layer (14) is disclosed. Multiple embodiments are disclosed with different configurations of the source (8), drain (6) and gate (10) electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring. An optical waveguide underlying the graphene layer (14) may be embedded into substrate (10) or gate oxide layer (12) in order to channel photons towards graphene layer (14).

Abstract translation: 公开了一种在栅极氧化物层（12）上使用单层或多层石墨烯作为光子检测层（14）的光电检测器。 公开了具有源（8），漏极（6）和栅极（10）电极的不同配置的多个实施例。 此外，公开了包括多个光电检测元件的光电探测器阵列，用于诸如成像和监视的应用。 石墨烯层（14）下面的光波导可以嵌入衬底（10）或栅极氧化物层（12）中，以将光子传导到石墨烯层（14）。

公开(公告)号：DE102013210162A1

公开(公告)日：2013-12-19

申请号：DE102013210162

申请日：2013-05-31

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  GARCIA ALBERTO VALDES ,  SUNG CHUN-YUNG ,  XIA FENGNIAN ,  YAN HUGEN

IPC: H05K9/00 ,  C01B31/04 ,  C09D5/32 ,  C09D5/33

Abstract: Strukturen zum Abschirmen elektromagnetischer Störungen und Verfahren zum Abschirmen eines Objekts vor elektromagnetischer Strahlung bei Frequenzen, die höher als ein Megahertz sind, beinhalten im Allgemeinen das Bereitstellen hoch dotierter dünner Lagen aus Graphen um das abzuschirmende Objekt herum. Die hoch dotierten dünnen Lagen aus Graphen können eine Dotierstoffkonzentration, die höher als > 1e1013 cm–2 ist, die dahingehend wirksam ist, dass die elektromagnetische Strahlung reflektiert wird, oder eine Dotierstoffkonzentration von 1e1013 cm–2 > n > 0 cm–2 aufweisen, die dahingehend wirksam ist, dass die elektromagnetische Strahlung absorbiert wird.

公开(公告)号：CA2828276A1

公开(公告)日：2012-09-27

申请号：CA2828276

申请日：2012-03-08

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  NEUMAYER DEBORAH A ,  ZHU WENJUAN

IPC: H01L21/336 ,  H01L29/78

Abstract: A semiconductor structure which includes a substrate; a graphene layer on the substrate; a source electrode and a drain electrode on the graphene layer, the source electrode and drain electrode being spaced apart by a predetermined dimension; a nitride layer on the graphene layer between the source electrode and drain electrode; and a gate electrode on the nitride layer, wherein the nitride layer is a gate dielectric for the gate electrode.

公开(公告)号：BR0308569A

公开(公告)日：2007-04-03

申请号：BR0308569

申请日：2003-02-19

Applicant: IBM

Inventor： COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP ,  APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K

IPC: H01L51/30 ,  H01L29/51 ,  H01L51/00 ,  H01L51/05

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.