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    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME
    4.
    发明申请
    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME 审中-公开
    SEMICONDUCTOR NANOSTRUCTURES，SEMICONDUCTOR DEVICES，AND METHODS OF MAKING SAME

    公开(公告)号：WO2008088669A8

    公开(公告)日：2009-02-05

    申请号：PCT/US2008000006

    申请日：2008-01-02

    Applicant: IBM ,  APPENZELLER JOERG ,  GUHA SUPRATIK ,  TUTUC EMANUEL

    Inventor： APPENZELLER JOERG ,  GUHA SUPRATIK ,  TUTUC EMANUEL

    IPC: H01L29/06 ,  B82B1/00 ,  B82B3/00

    CPC classification number: H01L21/30604 ,  B82Y10/00 ,  H01L21/02603 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1041 ,  H01L29/125 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/78696

    Abstract: A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

    Abstract translation: 提供了一种半导体结构，其包括沿纵向轴线布置的多个部分。 优选地，半导体结构包括位于中间部分的相对端的中间部分和两个端子部分。 具有第一掺杂剂浓度的半导体芯片优选地沿着纵向轴线延伸通过中间部分和两个端子部分。 具有第二较高掺杂剂浓度的半导体壳体优选地环绕半导体结构的两个端子部分但不在中间部分处的半导体芯体的一部分。 特别优选的是，半导体结构是具有不大于100nm的横截面尺寸的纳米结构。

    5.
    发明专利
    未知

    公开(公告)号：BR0308569A

    公开(公告)日：2007-04-03

    申请号：BR0308569

    申请日：2003-02-19

    Applicant: IBM

    Inventor： COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP ,  APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K

    IPC: H01L51/30 ,  H01L29/51 ,  H01L51/00 ,  H01L51/05

    Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

    7.
    发明专利
    未知

    公开(公告)号：AT551734T

    公开(公告)日：2012-04-15

    申请号：AT03721349

    申请日：2003-02-19

    Applicant: IBM

    Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN ,  COLLINS PHILIP ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP

    IPC: H01L51/05 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/30

    Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

    8.
    发明专利
    未知

    公开(公告)号：AT516600T

    公开(公告)日：2011-07-15

    申请号：AT06120727

    申请日：2003-02-19

    Applicant: IBM

    Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM

    IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

    Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME
    10.
    发明专利
    SEMICONDUCTOR NANOSTRUCTURES, SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME 未知

    公开(公告)号：CA2673330A1

    公开(公告)日：2008-07-24

    申请号：CA2673330

    申请日：2008-01-02

    Applicant: IBM

    Inventor： TUTUC EMANUEL ,  APPENZELLER JOERG ,  GUHA SUPRATIK

    IPC: H01L29/06 ,  B82B1/00 ,  B82B3/00

    Abstract: A semiconductor structure is provided, which includes multiple sections a rranged along a longitudinal axis. Preferably, the semiconductor structure c omprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentra tion preferably extends along the longitudinal axis through the middle secti on and the two terminal sections. A semiconductor shell having a second, hig her dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the se miconductor structure. It is particularly preferred that the semiconductor s tructure is a nanostructure having a cross-sectional dimension of not more t han 100 nm.

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