公开(公告)号：EP1609173A4

公开(公告)日：2010-09-01

申请号：EP04757859

申请日：2004-03-19

Applicant: IBM

Inventor： KAGAN CHERIE RENEE ,  MARTEL RICHARD

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L29/78 ,  H01L51/00 ,  H01L51/30 ,  H01L29/08

CPC classification number: H01L51/0541 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0545 ,  Y10S977/709 ,  Y10S977/731

公开(公告)号：EP1547165A4

公开(公告)日：2009-05-27

申请号：EP03773062

申请日：2003-09-26

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  COHEN GUY MOSHE ,  MARTEL RICHARD ,  MISEWICH JAMES A ,  TSANG JAMES CHEN-HSIANG

IPC: H01L51/05 ,  H01L51/30 ,  H01L51/52 ,  H01L33/00

CPC classification number: H01L51/52 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/938 ,  Y10S977/949

Abstract: A light emitting device comprises a gate electrode (101), a channel (103) comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode (101), a source (104) coupled to a first end of the channel injecting electrons into the channel, and a drain (105) coupled to a second end of the channel injecting holes into the channel.

公开(公告)号：WO02054505A3

公开(公告)日：2002-11-14

申请号：PCT/GB0105715

申请日：2001-12-21

Applicant: IBM ,  IBM UK

Inventor： AVOURIS PHAEDON ,  COLLINS PHILIP ,  MARTEL RICHARD

IPC: B82B3/00 ,  H01L21/00 ,  H01L21/82 ,  H01L29/06 ,  H01L29/15 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L51/30 ,  H01L51/20

CPC classification number: H01L51/0545 ,  B82Y10/00 ,  G11C2213/17 ,  G11C2213/18 ,  H01L51/0048 ,  H01L51/0512 ,  Y10S977/742 ,  Y10S977/845 ,  Y10S977/847 ,  Y10S977/888 ,  Y10S977/89 ,  Y10S977/896 ,  Y10S977/938

Abstract: A method is provided for forming a device. The method provides an insulating substrate including a source electrode, a drain electrode, and a gate electrode. The method provides carbon nanotube bundles including metallic and semiconducting component nanotubes in contact with the substrate. The method applies a voltage to the gate electrode to deplete the semiconducting component nanotubes of carriers, applies an electrical current through the nanotube, from a source electrode to a drain electrode, and breaks at least one metallic component nanotube to form a field effect transistor. The carbon nanotube bundle can be a multi-walled nanotube or a single-walled nanotube rope.

Abstract translation: 提供了一种用于形成装置的方法。 该方法提供了包括源电极，漏电极和栅电极的绝缘基板。 该方法提供了碳纳米管束，其包括与基底接触的金属和半导体组分纳米管。 该方法向栅电极施加电压以消耗载流子的半导体元件纳米管，从源电极向漏电极施加电流通过纳米管，并且断开至少一个金属成分纳米管以形成场效应晶体管。 碳纳米管束可以是多壁纳米管或单壁纳米管绳。

公开(公告)号：JP2004207697A

公开(公告)日：2004-07-22

申请号：JP2003394630

申请日：2003-11-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  MARTEL RICHARD ,  MISEWICH JAMES ANTHONY ,  SCHROTT ALEJANDRO GABRIEL

IPC: B82B1/00 ,  G11C13/02 ,  H01L27/10 ,  H01L27/20 ,  H01L29/06 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C2213/16 ,  H01L27/20

Abstract: PROBLEM TO BE SOLVED: To provide a method and structure which easily determine a change in the conductivity of nanotube by considering problems, defects and demerits in conventional methods and structure, and by applying stress to nanotube structure. SOLUTION: As to structure (and a method) for a piezoelectric device including a piezoelectric material layer, the nanotube structure is attached so as to generate a stress change in the nanotube structure by a change in the shape of a piezoelectric material. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：WO2004030043A2

公开(公告)日：2004-04-08

申请号：PCT/US0330647

申请日：2003-09-26

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  COHEN GUY MOSHE ,  MARTEL RICHARD ,  MISEWICH JAMES A ,  TSANG JAMES CHEN-HSIANG

IPC: H01L51/05 ,  H01L51/30 ,  H01L51/52 ,  H01L

CPC classification number: H01L51/52 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/938 ,  Y10S977/949

Abstract: A light emitting device comprises a gate electrode (101), a channel (103) comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode (101), a source (104) coupled to a first end of the channel injecting electrons into the channel, and a drain (105) coupled to a second end of the channel injecting holes into the channel.

Abstract translation: 发光装置包括栅电极（101），包含用于电激发光发射的分子的通道（103），其中分子设置在栅电极（101）的有效范围内，源（104）耦合到 所述沟道的第一端将电子注入所述沟道中，以及与所述沟道的第二端连接的漏极（105）将空穴注入所述沟道中。

公开(公告)号：WO2004086458A2

公开(公告)日：2004-10-07

申请号：PCT/US2004008402

申请日：2004-03-19

Applicant: IBM ,  KAGAN CHERIE RENEE ,  MARTEL RICHARD

Inventor： KAGAN CHERIE RENEE ,  MARTEL RICHARD

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L29/78 ,  H01L51/00 ,  H01L51/30 ,  H01L

CPC classification number: H01L51/0541 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0545 ,  Y10S977/709 ,  Y10S977/731

Abstract: An electronic device includes a source region and a drain region, a self-assembled monolayer disposed adjacent to the source region and the drain region, the self-assembled monolayer including at least one conjugated molecule, and a conductive substrate disposed adjacent to the self-assembled monolayer.

Abstract translation: 电子器件包括源极区和漏极区，邻近源极区和漏极区设置的自组装单层，包含至少一个共轭分子的自组装单层和邻近自组装的导电衬底， 组装单层。

公开(公告)号：WO2004086458A4

公开(公告)日：2010-12-09

申请号：PCT/US2004008402

申请日：2004-03-19

Applicant: IBM ,  KAGAN CHERIE RENEE ,  MARTEL RICHARD

Inventor： KAGAN CHERIE RENEE ,  MARTEL RICHARD

IPC: H01L29/08 ,  H01L20060101 ,  H01L21/00 ,  H01L21/84 ,  H01L27/01 ,  H01L27/12 ,  H01L29/78 ,  H01L35/24 ,  H01L51/00 ,  H01L51/30

CPC classification number: H01L51/0541 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0545 ,  Y10S977/709 ,  Y10S977/731

Abstract: An electronic device includes a source region and a drain region, a self-assembled monolayer disposed adjacent to the source region and the drain region, the self-assembled monolayer including at least one conjugated molecule, and a conductive substrate disposed adjacent to the self-assembled monolayer.

Abstract translation: 电子器件包括源极区和漏极区，邻近源极区和漏极区设置的自组装单层，包含至少一个共轭分子的自组装单层和邻近自组装的导电衬底， 组装单层。

公开(公告)号：AT526690T

公开(公告)日：2011-10-15

申请号：AT01272504

申请日：2001-12-21

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  COLLINS PHILIP ,  MARTEL RICHARD

IPC: B82B3/00 ,  H01L51/00 ,  B82Y10/00 ,  H01L21/00 ,  H01L21/82 ,  H01L29/06 ,  H01L29/15 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30

Abstract: A method is provided for forming a device. The method provides a substrate, and provides a plurality of nanotubes in contact with the substrate. The method comprises depositing metal contacts on the substrate, wherein the metal contacts are in contact with a portion of at least one nanotube. The method further comprises selectively breaking the at least one nanotube using an electrical current, removing the metal contacts, cleaning a remaining nanotube, and depositing a first metal contact in contact with a first end of the nanotube and a second metal contact in contact with a second end of the nanotube.

公开(公告)号：AT551734T

公开(公告)日：2012-04-15

申请号：AT03721349

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN ,  COLLINS PHILIP ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP

IPC: H01L51/05 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/30

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

公开(公告)号：AT516600T

公开(公告)日：2011-07-15

申请号：AT06120727

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.