公开(公告)号：AT516600T

公开(公告)日：2011-07-15

申请号：AT06120727

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

公开(公告)号：CA2659479C

公开(公告)日：2010-07-13

申请号：CA2659479

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP

IPC: H01L21/18 ,  H01L29/16 ,  H01L29/772 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon-nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from the carbon-nanotube by a dielectric film [111].

公开(公告)号：CA2431064C

公开(公告)日：2006-04-18

申请号：CA2431064

申请日：2001-12-21

Applicant: IBM

Inventor： AVOURIS PHAEDON ,  MARTEL RICHARD ,  COLLINS PHILIP G

IPC: B82B3/00 ,  H01L51/30 ,  H01L21/00 ,  H01L21/82 ,  H01L29/06 ,  H01L29/15 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L51/40

Abstract: A method is provided for forming a device. The method provides an insulating substrate including a source electrode, a drain electrode, and a gate electrode. The method provides carbon nanotube bundles including metallic an d semiconducting component nanotubes in contact with the substrate. The method applies a voltage to the gate electrode to deplete the semiconducting component nanotubes of carriers, applies an electrical current through the nanotube, from a source electrode to a drain electrode, and breaks at least one metallic component nanotube to form a field effect transistor. The carbo n nanotube bundle can be a multi-walled nanotube or a single-walled nanotube rope.

公开(公告)号：AU2003224668A8

公开(公告)日：2003-10-08

申请号：AU2003224668

申请日：2003-02-19

Applicant: IBM

Inventor： WONG HON-SUM PHILIP ,  COLLINS PHILIP G ,  AVOURIS PHAEDON ,  MARTEL RICHARD ,  APPENZELLER JOERG ,  CHAN KEVIN K

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L29/51 ,  H01L51/20

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

公开(公告)号：BR0308569A

公开(公告)日：2007-04-03

申请号：BR0308569

申请日：2003-02-19

Applicant: IBM

Inventor： COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP ,  APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K

IPC: H01L51/30 ,  H01L29/51 ,  H01L51/00 ,  H01L51/05

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

公开(公告)号：CA2479024A1

公开(公告)日：2003-10-02

申请号：CA2479024

申请日：2003-02-19

Applicant: IBM

Inventor： COLLINS PHILIP G ,  MARTEL RICHARD ,  CHAN KEVIN K ,  WONG HON-SUM PHILIP ,  APPENZELLER JOERG ,  AVOURIS PHAEDON

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source a nd a drain [106-107] formed at a first end and a second end of the carbon- nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from 10 the carbon-nanotube by a dielectric film [111].

公开(公告)号：CA2695715C

公开(公告)日：2011-06-07

申请号：CA2695715

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP

IPC: H01L21/335 ,  B82Y40/00 ,  H01L29/772 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon-nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from the carbon-nanotube by a dielectric film [111].

公开(公告)号：CA2479024C

公开(公告)日：2010-02-16

申请号：CA2479024

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube [104] deposited on a substrate [102], a source and a drain [106-107] formed at a first end and a second end of the carbon-nanotube [104], respectively, and a gate [112] formed substantially over a portion of the carbon-nanotube [104], separated from 10 the carbon-nanotube by a dielectric film [111].

公开(公告)号：PL373571A1

公开(公告)日：2005-09-05

申请号：PL37357103

申请日：2003-02-19

Applicant: IBM

Inventor： APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G ,  MARTEL RICHARD ,  WONG HON-SUM PHILIP

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/20 ,  H01L29/51

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

公开(公告)号：AU2003224668A1

公开(公告)日：2003-10-08

申请号：AU2003224668

申请日：2003-02-19

Applicant: IBM

Inventor： MARTEL RICHARD ,  WONG HON-SUM PHILIP ,  APPENZELLER JOERG ,  AVOURIS PHAEDON ,  CHAN KEVIN K ,  COLLINS PHILIP G

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: A carbon-nanotube field transistor semiconductor device, comprising: a vertical carbon-nanotube (508) wrapped in a dielectric material (511); a source formed at a first side of the carbon-nanotube; a drain (515) formed on a second side of the carbon-nanotube; a bilayer nitride complex through which a band strap of each of the source and the drain is formed connecting the carbon-nanotube wrapped in the dielectric material to the source and the drain; and a gate (512) formed substantially over a portion of the carbon-nanotube. Further disclosed are methods for forming the following self-aligned carbon-nanotube field effect transistor: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.