公开(公告)号：DE10339689A1

公开(公告)日：2005-03-31

申请号：DE10339689

申请日：2003-08-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ARNDT CHRISTIAN ,  SANDER RAINALD ,  KARTAL VELI

IPC: H01L23/62 ,  H01L27/02 ,  H03K17/082 ,  H02H9/04 ,  H02H7/20 ,  H03K17/695

Abstract: The drain (D) and source (S) path of the load transistor (T) carries a current (Id) between a supply voltage (Vbb) and earth (GND). A current measurement sensor (21) and the load (Z) are connected between the transistor and earth. The current sensor forms part of a deactivation circuit (20) and sends a signal (S21) to a switch control circuit (22). This sends a signal (S22) to a switch (23). The switch is connected to the gate (G) of the transistor. A signal input (IN) feeds a signal (Sin) to a drive switch (DRV) connected to the transistor gate. The deactivation circuit is connected to the supply voltage via a voltage limiter circuit with a diode (D1) and a Zener diode (Z1).

公开(公告)号：DE10223951A1

公开(公告)日：2003-12-11

申请号：DE10223951

申请日：2002-05-29

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： KARTAL VELI ,  SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  FALCK ELMAR

IPC: H01L29/32 ,  H01L29/36 ,  H01L29/861 ,  H01L21/328

公开(公告)号：DE102016120944A1

公开(公告)日：2017-05-04

申请号：DE102016120944

申请日：2016-11-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ILLING ROBERT ,  KARTAL VELI ,  LU-RUHBACH FANG

IPC: H03K17/082

Abstract: Eine erste Ausführungsform betrifft eine Vorrichtung, welche Folgendes umfasst: einen ersten Halbleiterschalter, einen integrierten Sensor zum Bestimmen eines Stroms, der durch den ersten Halbleiterschalter fließt, und einen Anschluss, dem ein Signal bereitgestellt wird, falls der Strom eine vorgegebene Bedingung erfüllt. Auch werden ein System, das eine solche Vorrichtung umfasst, und ein Betriebsverfahren vorgeschlagen.

公开(公告)号：DE102014110797A1

公开(公告)日：2015-02-05

申请号：DE102014110797

申请日：2014-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SANDER RAINALD ,  KARTAL VELI ,  GRAF ALFONS

IPC: H03K17/06 ,  H03K17/08

Abstract: Eine Schaltung umfasst einen elektronischen Schalter mit einem isolierten Gate, eine Messeinrichtung zur Ermittlung der Ladung am isolierten Gate und eine Energieversorgung zum Bereitstellen von Ladung an das isolierte Gate auf der Grundlage der von der Messeinrichtung ermittelten Ladung.

公开(公告)号：DE102014010807A1

公开(公告)日：2015-01-29

申请号：DE102014010807

申请日：2014-07-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KARTAL VELI

IPC: H01L23/58

Abstract: Elektronische Vorrichtung mit wenigstens einer stromführenden Halbleiterstruktur und einer Einrichtung zum Ermitteln der Temperatur an der Halbleitervorrichtung, wobei die maximale Übergangstemperatur und die Temperaturdifferenz über der Halbleiterstruktur ermittelt werden. Wenn eine dieser beiden eine vordefinierte Temperatur überschreitet, wird die Halbleiterstruktur abgeschaltet.

公开(公告)号：DE50114587D1

公开(公告)日：2009-01-29

申请号：DE50114587

申请日：2001-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KARTAL VELI ,  SCHULZE HANS-JOACHIM

IPC: H01L29/06 ,  H01L29/32 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

Abstract: A body (1) consisting of a doped semiconductor material with a pn junction (10) and an area (2) of reduced mean free path length (lambdr) for free charge carriers is disclosed. Said area (2) has sections (21, 22) which succeed each other in at least one specified direction (x, y, z) and between which there is at least one region (23), containing a mean free path length (lambd0) for the free charge carriers that is larger in relation to the reduced mean free path length (lambdr).

公开(公告)号：DE10048165B4

公开(公告)日：2008-10-16

申请号：DE10048165

申请日：2000-09-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KARTAL VELI ,  SCHULZE HANS-JOACHIM

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/74 ,  H01L29/861

公开(公告)号：DE102005034012A1

公开(公告)日：2006-11-09

申请号：DE102005034012

申请日：2005-07-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OTREMBA RALF ,  LENZ MICHAEL ,  KARTAL VELI

IPC: H01L25/07 ,  H01L23/488

Abstract: A component has a chip formed as a power metal-oxide-semiconductor field effect transistor (MOSFET) (18) with source, drain and gate terminals. Another chip is formed as a diode (19) with anode and cathode terminals, where the chips are arranged upon each other in a housing. The anode and cathode terminals of the diode are electrically connected with the source and drain terminals of the MOSFET. The terminals of the diode and MOSFET are connected to one another by a diffusion solder connection. INDEPENDENT CLAIM are also included for the following: (1) an illumination switch including a power semiconductor component; (2) a switch for a heating unit including a power semiconductor component; (3) an electronic switch including a power semiconductor component; and (4) the production of a power semiconductor switch.

公开(公告)号：DE10214176A1

公开(公告)日：2003-10-23

申请号：DE10214176

申请日：2002-03-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  KARTAL VELI ,  NIEDERNOSTHEIDE FRANZ-JOSEF

IPC: H01L21/266 ,  H01L29/08 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/868 ,  H01L29/772 ,  H01L21/335

Abstract: Semiconductor component comprises a doped first semiconductor zone (12) of first conductivity (p), a second semiconductor zone (14) of second conductivity (n) connected to the first zone, a third semiconductor zone (18) connected to the second zone, and a stop zone (16) of second conductivity arranged in the second semiconductor zone at a distance from the third semiconductor zone. The stop zone has several lateral zones. The distance between the stop zone and the third semiconductor zone is less than the distance between the stop zone and the first semiconductor zone. An Independent claim is also included for a process for the production of a stop zone in a doped zone of a semiconductor body.