公开(公告)号：DE102004013932A1

公开(公告)日：2005-10-27

申请号：DE102004013932

申请日：2004-03-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTT THOMAS ,  LASKA THOMAS ,  RUPP THOMAS ,  SCHAEFFER CARSTEN ,  SCHMIDT GERHARD ,  SCHULZE HOLGER

IPC: H01L21/22 ,  H01L21/268 ,  H01L21/324 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336

Abstract: A first main surface/front side (9) has a metal coating (5). A second main surface/rear side (10) has first (3) and second (4) areas doped with a power-type doping agent. Doped areas on a semiconductor substrate's rear (1) side are treated at a temperature above a melting temperature for the metal coating on the front side. An independent claim is also included for a method for producing semiconductor components with a vertical structure so as to handle heat in a semiconductor substrate.