中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.021 seconds)

    Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer
    2.
    发明专利
    Production of a semiconductor wafer useful in e.g. chip cards, comprises applying a semiconductor layer epitaxially on a surface of a semiconductor substrate, and partially removing the substrate from the semiconductor layer 未知

    公开(公告)号：DE102006030869A1

    公开(公告)日：2008-01-10

    申请号：DE102006030869

    申请日：2006-07-04

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： FATHULLA AHMAD ,  LACKNER GERALD ,  RUPP THOMAS ,  SANTOS RODRIGUEZ FRANCISCO JAV ,  SCHOENHERR HELMUT ,  SCHULZE HANS-JOACHIM

    IPC: H01L21/306 ,  C30B25/02

    Abstract: The production of a semiconductor wafer useful in e.g. chip cards, comprises providing a semiconductor substrate (1) from a first semiconductor material with a first surface and a second surface, which faces the first surface, applying a first semiconductor layer (2) from a second semiconductor material epitaxially on the second surface, and partially removing the substrate from the first semiconductor layer. The epitaxial application of a second semiconductor layer (3) from a third semiconductor material on the first semiconductor layer takes place to the desired target thickness. The production of a semiconductor wafer useful in e.g. chip cards, comprises providing a semiconductor substrate (1) from a first semiconductor material with a first surface and a second surface, which faces the first surface, applying a first semiconductor layer (2) from a second semiconductor material epitaxially on the second surface, and partially removing the substrate from the first semiconductor layer. The epitaxial application of a second semiconductor layer (3) from a third semiconductor material on the first semiconductor layer takes place to the desired target thickness. After the partial removing, the first semiconductor layer is partly removed via corroding. Before corroding a prefabricated device is attached as an etching mask at the first surface of the substrate. The device covers an external area of the first surface and limits an opening that releases an internal area of the first surface of the substrate, and is again removed after corroding. A semiconductor component (4) is formed in the first- and second semiconductor layer before the partial removing of the substrate.

Patent Agency Ranking