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    21.
    发明专利
    未知

    公开(公告)号：NO20092749L

    公开(公告)日：2002-03-12

    申请号：NO20092749

    申请日：2009-07-22

    Applicant: INPUT OUTPUT INC

    Inventor： GOLDBERG HOWARD D ,  YU DULI ,  YU LIANZHONG ,  RIED ROBERT P

    IPC: B81B3/00 ,  B81C1/00 ,  G02B26/10 ,  C23F1/02 ,  G01P9/04 ,  G02B26/08 ,  G03F7/20 ,  G06V30/224

    Abstract: The present invention provides merged-mask processes for fabricating micromachined devices in general and mirrored assemblies for use in optical scanning devices in particular. A method of fabricating a three dimensional structure, comprising, providing a substrate, applying a layer of a first masking material onto the substrate, applying a layer of a second masking material onto the layer of the first masking material, patterning the layer of the second masking material, applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials, patterning the layers of the first and third masking materials, etching the exposed portions of the substrate, etching the exposed portions of the layers of the first and third masking materials and etching the exposed portions of the substrate.

    Merged-mask micro-machining process
    27.
    发明专利
    Merged-mask micro-machining process 未知

    公开(公告)号：AU5932700A

    公开(公告)日：2001-01-30

    申请号：AU5932700

    申请日：2000-07-13

    Applicant: INPUT/OUTPUT INC

    Inventor： YU LIANZHONG ,  RIED ROBERT P ,  GOLDBERG HOWARD D ,  YU DULI

    IPC: G02B26/10 ,  B81B3/00 ,  B81C1/00 ,  C23F1/02 ,  G01P9/04 ,  G02B26/08 ,  G03F7/20 ,  G06V30/224 ,  G01P15/135 ,  G02B26/00 ,  C23F1/00 ,  G03F7/26

    Abstract: The present invention provides merged-mask processes for fabricating micromachined devices in general and mirrored assemblies for use in optical scanning devices in particular. A method of fabricating a three dimensional structure, comprising, providing a substrate, applying a layer of a first masking material onto the substrate, applying a layer of a second masking material onto the layer of the first masking material, patterning the layer of the second masking material, applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials, patterning the layers of the first and third masking materials, etching the exposed portions of the substrate, etching the exposed portions of the layers of the first and third masking materials and etching the exposed portions of the substrate.

    MERGED-MASK MICRO-MACHINING PROCESS
    28.
    发明专利
    MERGED-MASK MICRO-MACHINING PROCESS 未知

    公开(公告)号：CA2378725C

    公开(公告)日：2012-09-04

    申请号：CA2378725

    申请日：2000-07-13

    Applicant: INPUT OUTPUT INC

    Inventor： YU LIANZHONG ,  RIED ROBERT P ,  GOLDBERG HOWARD D ,  YU DULI

    IPC: C23F1/00 ,  G02B26/10 ,  B81B3/00 ,  B81C1/00 ,  C23F1/02 ,  G01P9/04 ,  G01P15/135 ,  G02B26/00 ,  G02B26/08 ,  G03F7/20 ,  G03F7/26 ,  G06V30/224

    Abstract: The present invention provides merged-mask processes for fabricating micro-machined devices in general and mirrored assemblies for use in optical scanning devices in particular. The process includes (a) providing a substrate having a predetermined thickness; (b) applying a first masking layer on a first portion of the substrate and a second masking layer on a second portion of the substrate, said second masking layer being at least as thick as the first masking layer; (c) etching a portion of the second masking layer to provide a first exposed portion of the substrate; (d) etching the first exposed portion of the substrate to a first depth; (e) etching the second masking layer to provide a second exposed portion of the substrate; and (f) etching simultaneously the first exposed portion of the substrate to a second depth and the second exposed portion of the substrate to a first depth. The process further comprises patterning the first masking layer before applying the second masking layer to provide the second portion of the substrate for etching and etching the first masking layer to expose the second portion of the substrate. The first and second masking layers are applied prior to etching the substrate.

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