公开(公告)号：JP2006117917A

公开(公告)日：2006-05-11

申请号：JP2005263629

申请日：2005-09-12

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAKAGAWA YASUSHI ,  AKIYAMA MASAHIRO ,  KUROSAWA TAKAHIKO ,  SHIODA ATSUSHI

IPC: C08G77/60

Abstract: PROBLEM TO BE SOLVED: To provide a polycarbosilane surely comprising a silicon-methyl group binding site and having both a silicon-hydrogen bond and a silicon-oxygen bond and to provide a method for producing the polycarbosilane.
SOLUTION: The polycarbosilane has a main chain in which the silicon atom and carbon atom are alternately continuous and has a repeating structural unit of an SiH group-containing carbosilane, a repeating structural unit of dimethylcarbosilane and a repeating structural unit of an SiO group-containing carbosilane. The polycarbosilane is produced by reacting a raw material polymer having the structural units of the dimethylcarbosilane and the SiH group-containing silane with water and/or an alcohol in the presence of a basic catalyst.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一定要包含硅 - 甲基结合位点并具有硅 - 氢键和硅 - 氧键的聚碳硅烷，并提供一种生产聚碳硅烷的方法。 解决方案：聚碳硅烷具有其中硅原子和碳原子交替连续并具有含SiH基的碳硅烷的重复结构单元，二甲基碳硅烷的重复结构单元和SiO的重复结构单元的主链 含有基团的碳硅烷。 聚碳硅烷通过在碱性催化剂的存在下使具有二甲基碳硅烷和含SiH基的硅烷的结构单元的原料聚合物与水和/或醇反应来制备。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006093657A

公开(公告)日：2006-04-06

申请号：JP2005200244

申请日：2005-07-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TSUCHIYA HAJIME ,  EGAWA HIROMI ,  KOKUBO TERUKAZU ,  SHIODA ATSUSHI

IPC: H01L21/312 ,  C08G77/04 ,  C08G77/50 ,  C09D5/25 ,  C09D183/00

Abstract: PROBLEM TO BE SOLVED: To provide an organic silica system film for a semiconductor apparatus, and a forming method thereof. SOLUTION: The forming method comprises the steps of coating an insulating film forming composition to a substrate, heating the coated film, and performing a hardening process by applying heat and ultraviolet rays to the coated film. The insulating film forming composition is a hydrolytic condensate of a compound expressed by the following formulas (1) to (4), which contains an organic silica sol including 11.8-16.7 mol% of carbon atoms and an organic solvent. (1): R 1 Si(OR 2 ) 3 , (2): Si(OR 3 ) 4 , (3): (R 4 ) 2 Si(OR 5 ) 2 , (4): R 6 b (R 7 O) 3-b Si-(R 10 ) d -Si(OR 8 ) 3-c R 9 c , In the formula, R 1 -R 9 indicate an alkyl group or an aryl group respectively; b and c are same or different and indicate the number of 0-2, and R 10 is expressed by an oxygen atom; a phenylene group, or a group of -(CH 2 ) m - (where, m is an integer of 1-6); and then d indicates 0 or 1. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于半导体装置的有机二氧化硅系膜及其形成方法。 解决方案：成型方法包括以下步骤：将绝缘膜形成组合物涂覆到基材上，加热涂膜，并通过向涂膜施加热和紫外线进行硬化过程。 绝缘膜形成组合物是由下述式（1）〜（4）表示的化合物的水解缩合物，其含有11.8〜16.7摩尔％的碳原子的有机硅溶胶和有机溶剂。 （1）：R（SP）2 Si（OR SP）2（S / S） （3）：（R 4 ） 2 2 SB>，（4）：R 6 b （R SP 7） 10 ）ð -Si（OR 8 ） 3-C - [R 9 < SB> c 在该式中，R“SP”1 -R 9 分别表示烷基或芳基; b和c相同或不同，表示0-2的数，R 10 由氧原子表示; 亚苯基或 - （CH 2 SB 2） - （其中，m为1-6的整数）的基团。 然后d表示0或1.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004059736A

公开(公告)日：2004-02-26

申请号：JP2002220076

申请日：2002-07-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MITA MICHIHIRO ,  HAYASHI EIJI ,  AKIYAMA MASAHIRO ,  SHIODA ATSUSHI

IPC: C08G77/06 ,  C08G77/18 ,  C09D1/00 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a membrane capable of forming a silica-based membrane having low dielectric constant and high elastic modulus as an interlaminar electrical insulation membrane material for semiconductor devices or the like.
SOLUTION: The composition for forming a membrane comprises a polysiloxane which is obtained by hydrolyzing (A) at least one silane compound selected from the group consisting of a compound of the general formula(1):R
x Si(OR
1 )
4-x , a compound of the general formula(2):Si(OR
2 )
4 and a compound of the general formula(3):R
3
y (R
4 O)
3-y Si-(R
7 )
d -Si(OR
5 )
3-z R
6
z in the presence of (B) a basic compound, (C) water and (D) a secondary or tertiary alcohol followed by carrying out a condensation reaction. In the general formulae(1), (2) and (3), R is H, F or a monovalent organic group, R
1 to R
6 are each a monovalent organic group, and R
7 is O, a phenylene group or the group:-(CH
2 )
n -.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003297819A

公开(公告)日：2003-10-17

申请号：JP2002095498

申请日：2002-03-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： HAYASHI EIJI ,  IKEDA NORIHIKO ,  SHIODA ATSUSHI

IPC: H01L21/768 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a film which is a coating film having an even and appropriate thickness and a superior dielectric constant and mechanical strength, and which has superior storage stability, as an interlayer insulation film in a semiconductor device or the like. SOLUTION: A method of manufacturing a carbosilane-based film for a semiconductor device includes a process of irradiating a high-energy beam such as electron beams, ultraviolet rays, and X-rays on a film containing a carbosilane compound. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提供作为半导体器件中的层间绝缘膜或具有优异的介电常数和机械强度的具有优良的储存稳定性的涂膜，其具有均匀且适当的厚度， 喜欢。 解决方案：制造用于半导体器件的碳硅烷类膜的方法包括在含有碳硅烷化合物的膜上照射诸如电子束，紫外线和X射线的高能束的方法。 版权所有（C）2004，JPO

公开(公告)号：JP2003115485A

公开(公告)日：2003-04-18

申请号：JP2001307909

申请日：2001-10-03

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  PATZ MATTHIAS ,  SEKIGUCHI MANABU ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: B32B27/00 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a laminating film, in more detail, a laminating film for semiconductors which is superior in adhesion to a coating film formed by the CVD method for semiconductor elements, etc. SOLUTION: The film forming method comprises a step for (A) processing a substrate by at least one process selected from among the UV irradiation process, oxygen plasma process, nitrogen plasma process, helium plasma process, argon plasma process, hydrogen plasma process, and ammonia plasma process, and a step for (B) coating and heating it with a film forming composition containing polysiloxane and an organic solvent.

公开(公告)号：JP2002026002A

公开(公告)日：2002-01-25

申请号：JP2000206162

申请日：2000-07-07

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  HAYASHI EIJI ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: B05D5/12 ,  B05D7/00 ,  B05D7/24 ,  C08K5/00 ,  C08L83/00 ,  H01B3/00 ,  H01B3/12 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain an insulating film which has a low dielectric constant and resistance to oxygen plasma, for an interlayer insulating film in a semiconductor device or the like. SOLUTION: This insulating film is constituted by a silica-based film and has a coated-film refractive index at 633 nm of 1.37-1.42 and a dielectric constant of 2.7-3.2. A material for forming the insulating film containing a silica- based film precursor and a solvent is applied on a substrate, and is heated at 380-450 deg.C to form the insulating film.

公开(公告)号：JP2002025999A

公开(公告)日：2002-01-25

申请号：JP2000205944

申请日：2000-07-06

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  HAYASHI EIJI ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: H01L21/312 ,  H01B3/00 ,  H01B3/46 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain an insulating film which has a low specific permeability and an oxygen plasma resistance as the interlayer insulating film used in semiconductor elements, etc. SOLUTION: This insulating film is composed of a silica-based film having a coating film refractive index of 1.37-1.42 at 633 nm.

公开(公告)号：JP2001240798A

公开(公告)日：2001-09-04

申请号：JP2000052017

申请日：2000-02-28

Applicant: JSR CORP

Inventor： HAYASHI EIJI ,  JO YOSHIHIDE ,  HASEGAWA KOICHI ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: C08K5/00 ,  C08G77/08 ,  C08G77/50 ,  C08K5/07 ,  C08L83/06 ,  C08L83/14 ,  C09D5/25 ,  C09D183/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain a film-forming composition yielding a coated film which has a uniform thickness and has an excellent mechanical strength, crack resistance and CMP resistance and a low dielectric constant. SOLUTION: The film-forming composition contains (A); a hydrolysate and/or condensate of at least one compound chosen from the group of R1aSi(OR2)4-a, wherein R1 is hydrogen, fluorine or a monovalent organic group; R2 is a monovalent organic group; and a is an integer of 0-2) and R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c wherein R3, R4, R5 and R6 are each a monovalent organic group; b and c are each 0-2; R7 is oxygen or a-(CH2)ngroup; n is 1-6; and d is 0 or 1 and (B); HO-(SiR8R9O)eH wherein R8 and R9 are each a monovalent organic group; and e is an integer of 2-100.

公开(公告)号：JP2001137776A

公开(公告)日：2001-05-22

申请号：JP32094399

申请日：1999-11-11

Applicant: JSR CORP

Inventor： SHIODA ATSUSHI ,  SHIBA TADAHIRO ,  KUROSAWA TAKAHIKO ,  YAMADA KINJI

IPC: B05D7/24 ,  B05D3/04 ,  B05D7/00 ,  C08G77/08 ,  C08G77/50 ,  C08J5/18 ,  C09D183/00 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a silica-based film useful as an interlaminar insulating film in a semiconductor element and having a low dielectric constant and high elasticity. SOLUTION: A silica type coating composition containing (A-1) R1aSi(OR2)4-a (wherein R1 is hydrogen, fluorine or a monovalent organic group; R2 is a monovalent organic group; and (a) is an integer of 0 to 2) and/or (A-2) R3b(R4 O)3-bSi-(R7)d-Si(OR5)3-cR6c (wherein R3, R4, R5, and R6 may be same or different and are each a monovalent organic group; (b) and (c) may be same or different and are each 0-2; R7 denotes oxygen or -(CH2)n-; (n) is 1-6; and (d) is 0 or 1) or hydrolyzed products or its condensate of either (A-1) and (A-2) and (B) an organic solvent, is applied to a substrate and after the organic solvent is removed, the resultant substrate is heated at 250 to 400 deg.C in 1 Pa or higher oxygen partial pressure and further heated at 350 to 470 deg.C in lower than 1 Pa oxygen partial pressure to form the objective silica based film.

公开(公告)号：JP2001049179A

公开(公告)日：2001-02-20

申请号：JP17770399

申请日：1999-06-24

Applicant: JSR CORP

Inventor： KUROSAWA TAKAHIKO ,  KONNO KEIJI ,  HAYASHI EIJI ,  SHIODA ATSUSHI ,  YAMADA KINJI ,  GOTO KOHEI

IPC: H01L21/312 ,  C09D171/02 ,  C09D183/04 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a film-forming composition capable of imparting a low density film excellent in dielectric constant characteristics and water absorbency characteristics and useful as an interlayer insulating film in semiconductor elements, etc., being an uniform coating film and excellent in CMP resistance, and also excellent in storage stability. SOLUTION: This film-forming composition comprises (A) silane compounds composed of at least one kind selected from the group consisting of R2R3Si(OR1)2, R2Si(OR1)3, and Si(OR1)4, and R2s(R1O)3-sSiRSi(OR1)3-tR2t (wherein R1 to R3 are each a monovalent organic group; R is a divalent organic group; s and t are each an integer of 0-1) or its hydrolyzate and/or condensation product, (B) a polyether represented by the general formula PEOn-R' (wherein PEO is a polyethylene oxide unit; R' is a 5-30C monovalent organic group; n is an integer of 5-50) and (C) at least one kind selected from the group consisting of an alcohol-based solvent, a ketone-based solvent, an amide-based solvent and an ester-based solvent.