公开(公告)号：IL184855A

公开(公告)日：2010-12-30

申请号：IL18485507

申请日：2007-07-26

Applicant: LAM RES CORP ,  MARKS JEFFREY ,  SADJADI S M REZA

Inventor： MARKS JEFFREY ,  SADJADI S M REZA

Abstract: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer wherein the first mask defines a plurality of spaces with widths. A sidewall layer is formed over the first mask. Features are etched into the etch layer through the sidewall layer, wherein the features have widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed. An additional mask is formed over the etch layer wherein the additional mask defines a plurality of spaces with widths. A sidewall layer is formed over the additional mask. Features are etched into the etch layer through the sidewall layer, wherein the widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed.

公开(公告)号：SG10201502438RA

公开(公告)日：2015-10-29

申请号：SG10201502438R

申请日：2015-03-27

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA S H ,  YANG WENBING ,  SHEN MEIHUA ,  JANEK RICHARD P ,  MARKS JEFFREY ,  SINGH HARMEET ,  LILL THORSTEN

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

公开(公告)号：DE112006000308T5

公开(公告)日：2008-03-20

申请号：DE112006000308

申请日：2006-01-20

Applicant: LAM RES CORP

Inventor： MARKS JEFFREY ,  SADJADI S M REZA

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31 ,  H01L21/3213

Abstract: A method for forming features in an etch layer is provided. A first mask is formed over the etch layer wherein the first mask defines a plurality of spaces with widths. A sidewall layer is formed over the first mask. Features are etched into the etch layer through the sidewall layer, wherein the features have widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed. An additional mask is formed over the etch layer wherein the additional mask defines a plurality of spaces with widths. A sidewall layer is formed over the additional mask. Features are etched into the etch layer through the sidewall layer, wherein the widths that are smaller than the widths of the spaces defined by the first mask. The mask and sidewall layer are removed.

公开(公告)号：DE60128460T2

公开(公告)日：2008-01-17

申请号：DE60128460

申请日：2001-03-16

Applicant: LAM RES CORP

Inventor： MARKS JEFFREY

IPC: H01J37/32 ,  H05H1/46 ,  G03F7/42 ,  H01L21/3065 ,  H01L21/311

Abstract: A method and apparatus for performing a dielectric etch, etch mask stripping, and etch chamber clean. A wafer is placed in an etch chamber. A dielectric etch is performed on the wafer using an in situ plasma generated by an in situ plasma device in the etch chamber. The etch mask is stripped using a remote plasma generated in a remote plasma device connected to the etch chamber. The wafer is removed from the etch chamber and either the in situ plasma or the remote plasma may be used to clean the etch chamber. In etch chambers that do not use confinement rings, a heater may be used to heat the etch chamber wall to provide improved cleaning.