公开(公告)号：SG10201502438RA

公开(公告)日：2015-10-29

申请号：SG10201502438R

申请日：2015-03-27

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA S H ,  YANG WENBING ,  SHEN MEIHUA ,  JANEK RICHARD P ,  MARKS JEFFREY ,  SINGH HARMEET ,  LILL THORSTEN

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

公开(公告)号：SG10201502437TA

公开(公告)日：2015-10-29

申请号：SG10201502437T

申请日：2015-03-27

Applicant: LAM RES CORP

Inventor： SHEN MEIHUA ,  SINGH HARMEET ,  TAN SAMANTHA S H ,  MARKS JEFFREY ,  LILL THORSTEN ,  JANEK RICHARD P ,  YANG WENBING ,  SHARMA PRITHU

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.