公开(公告)号：SG10201502437TA

公开(公告)日：2015-10-29

申请号：SG10201502437T

申请日：2015-03-27

Applicant: LAM RES CORP

Inventor： SHEN MEIHUA ,  SINGH HARMEET ,  TAN SAMANTHA S H ,  MARKS JEFFREY ,  LILL THORSTEN ,  JANEK RICHARD P ,  YANG WENBING ,  SHARMA PRITHU

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

公开(公告)号：SG10201606891SA

公开(公告)日：2017-03-30

申请号：SG10201606891S

申请日：2016-08-18

Applicant: LAM RES CORP

Inventor： YANG WENBING ,  TAN SAMANTHA ,  KANARIK KEREN JACOBS ,  MARKS JEFFREY ,  KIM TAESEUNG ,  SHEN MEIHUA ,  LILL THORSTEN

Abstract: Provided herein are methods of atomic layer etching (ALE) of metals including tungsten (W) and cobalt (Co). The methods disclosed herein provide precise etch control down to the atomic level, with etching a low as 1 Å to 10 Å per cycle in some embodiments. In some embodiments, directional control is provided without damage to the surface of interest. The methods may include cycles of a modification operation to form a reactive layer, followed by a removal operation to etch only this modified layer. The modification is performed without spontaneously etching the surface of the metal.

公开(公告)号：SG10201600021UA

公开(公告)日：2016-08-30

申请号：SG10201600021U

申请日：2016-01-04

Applicant: LAM RES CORP

Inventor： LILL THORSTEN ,  BERRY III IVAN L ,  SHEN MEIHUA ,  SCHOEPP ALAN M ,  HEMKER DAVID J

公开(公告)号：SG10201500548QA

公开(公告)日：2015-09-29

申请号：SG10201500548Q

申请日：2015-01-23

Applicant: LAM RES CORP

Inventor： MONICA TITUS ,  GOWRI KAMARTHY ,  HARMEET SINGH ,  YOSHIE KIMURA ,  SHEN MEIHUA ,  ZHOU BAOSUO ,  ZHOU YIFENG ,  JOHN HOANG

Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.

公开(公告)号：SG10201603608RA

公开(公告)日：2016-12-29

申请号：SG10201603608R

申请日：2016-05-06

Applicant: LAM RES CORP

Inventor： HSU CHIH-HSUN ,  SHEN MEIHUA ,  LILL THORSTEN

Abstract: A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen, nitrogen and fluorine containing components to form silicon oxide into a compound comprising silicon, hydrogen, nitrogen, and fluorine, forming the surface reaction gas into a plasma, and stopping the flow of the surface reaction gas. The surface is wet treated to remove the compound.

公开(公告)号：SG10201502438RA

公开(公告)日：2015-10-29

申请号：SG10201502438R

申请日：2015-03-27

Applicant: LAM RES CORP

Inventor： TAN SAMANTHA S H ,  YANG WENBING ,  SHEN MEIHUA ,  JANEK RICHARD P ,  MARKS JEFFREY ,  SINGH HARMEET ,  LILL THORSTEN

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

公开(公告)号：SG10201909284PA

公开(公告)日：2019-11-28

申请号：SG10201909284P

申请日：2016-05-06

Applicant: LAM RES CORP

Inventor： HSU CHIH-HSUN ,  SHEN MEIHUA ,  LILL THORSTEN

Abstract: RESIDUEFREE OXIDE ETCH OF THE DISCLOSURE A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen, nitrogen and fluorine containing components to form silicon oxide into a compound comprising silicon, hydrogen, nitrogen, and fluorine, forming the surface reaction gas into a plasma, and stopping the flow of the surface reaction gas. The surface is wet treated to remove the compound. Fig. 15