Abstract:
A semiconductor substrate for a micro-fluid ejection head. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of A1N, TaN, and TaA1 alloys, and has a sheet resistance ranging from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic% tantalum, from about 10 to about 40 atomic% aluminum and from about 5 to about 30 atomic% nitrogen.
Abstract:
A semiconductor substrate for a micro-fluid ejecting device. The semiconductor substrate includes a plurality of fluid ejection devices disposed on the substrate. A plurality of driver transistors are disposed on the substrate for driving the plurality of fluid ejection devices. A programmable memory matrix containing embedded programmable memory devices is operatively connected to the micro-fluid ejecting device for collecting and storing information on the semiconductor substrate for operation of the micro-fluid ejecting device. The programmable memory matrix provides a high density of memory bits embedded on the substrate for storing information about the micro-fluid ejecting device.
Abstract:
A semiconductor substrate for a micro-fluid ejection head. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of A1N, TaN, and TaA1 alloys, and has a sheet resistance ranging from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic% tantalum, from about 10 to about 40 atomic% aluminum and from about 5 to about 30 atomic% nitrogen.
Abstract:
A process for making a micro-fluid ejection head comprising a semiconductor substrate. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of AIN, TaN, and TaAl alloys, and has a sheet resistance from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic% tantalum, from about 10 to about 40 atomic% aluminum and from about 5 to about 30 atomic% nitrogen.
Abstract:
An ink jet printing apparatus includes a print head having a nozzle array (N1 - N320) and which scans across the print medium in a scan direction. The nozzle array includes first and second substantially columnar nozzle arrays (34,36), each aligned with a print medium advance direction. Each substantially columnar array has an upper subarray pair including an upper left and an upper right subarray of nozzles (C84, C83; C74, C73), each including a substantially linear arrangement of n nozzles having equal nozzle-to-nozzle spacings. Each upper right subarray is offset from the corresponding upper left subarray in the scan direction by a first spacing and in the print medium advance direction by one-half of the nozzle-to-nozzle spacing. The second substantially columnar array of offset from the first substantially columnar array in the second direction by a second spacing and in the print medium advance direction by one-forth of the nozzle-to-nozzle spacing.
Abstract:
A process for making a micro-fluid ejection head comprising a semiconductor substrate. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of AIN, TaN, and TaAl alloys, and has a sheet resistance from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic% tantalum, from about 10 to about 40 atomic% aluminum and from about 5 to about 30 atomic% nitrogen.