公开(公告)号：JP2506800B2

公开(公告)日：1996-06-12

申请号：JP19296587

申请日：1987-07-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/38 ,  G03C5/00 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

公开(公告)号：JPH06163350A

公开(公告)日：1994-06-10

申请号：JP31026992

申请日：1992-11-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03B27/32 ,  G03B27/54 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To improve resolution and focus depth simultaneously and to improve contrast even when a line width of a repetitive pattern is changed by reducing a rate of zero-order light directed to a pupil by dividing illumination source and by directing just a part of each divided light source to a pupil. CONSTITUTION:Light projected from a water source lamp 1 which is an exposure light source and converged by an oval mirror 2 is reflected by a mirror 3 and injected to an annular lens 4. Light passed through an illumination aperture diaphragm 5 is reflected by a mirror 6 and illuminates a reticule 8 by a condenser lens 7. A pupil surface of an illumination system is made to be illuminated as shown is (b). Four circles B which partially overlap with a pupil A show a projection image a pupil surface of each divided light source. When an illumination system is improved in this way, only a part of light (zero order light) which does not receive diffraction by a mask is injected and a rate of zero order light is reduced to primary light. Therefore, contrast of a projection image is improved.

公开(公告)号：JPH06110192A

公开(公告)日：1994-04-22

申请号：JP25601892

申请日：1992-09-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/30 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PURPOSE:To easily form phase shift patterns with high accuracy. CONSTITUTION:The surface of a mask substrate 11 is spin coated with a silicon oxide coating film constituting a phase shift layer 13. This film is then spin coated with a resist 14. In succession, the resist is exposed with electron beam to form the prescribed patterns. The silicon oxide coating film is removed by dry etching by as much as 280nm film thickness by using a parallel flat plate type reactive ion sputtering method with the patterns of the resist 14 as a mask. The removed film thickness corresponds to 70% of the total film thickness of the phase shift layer 13. In succession, the remained silicon oxide coating film is removed by wet etching using a buffer hydrofluoric acid soln.

公开(公告)号：JPH0611827A

公开(公告)日：1994-01-21

申请号：JP5192293

申请日：1993-03-12

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/68 ,  G03F1/72 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PURPOSE:To easily correct the defects on a phase shift mask with high controllability. CONSTITUTION:A quartz substrate which is 5-inch square is used as a transparent substrate 1. Light shielding film patterns 2 are chromium films of about 80nm film thickness. Coating oxide films of 420nm film thickness are used as phase shifters 3. The phase shifter defects 5 exist on the mask of such phase shifters 3. A silicon-contg. resist 8 is applied on the mask of the phase shifters 3 including such phase shifter defects 5. The film thickness of the resist 8 is 50nm in the flat parts of the transparent substrate 1. The resist 8 is exposed at 0.3muC/cm exposure in the regions including the peripheral parts of the defects 5 by using an electron beam of 20kV acceleration voltage. The substrate is immersed for 60 seconds in an aq. tetramethyl ammonium hydroxide soln. (8% concn.) and is developed after exposure of the electron beam. The silicon-contg. resist 8 is a negative type resist and, therefore, only the regions irradiated with the electron beams 9 remain after the development.

公开(公告)号：JPH04191739A

公开(公告)日：1992-07-10

申请号：JP32464990

申请日：1990-11-26

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TAKAYAMA YUICHIRO ,  TODOKORO YOSHIHIRO ,  INOUE MORIO

IPC: G03F1/30 ,  G03F1/68 ,  H01L21/027

Abstract: PURPOSE:To enhance reliability of generated data by judging whether mask data are wiring data or window data, judging whether the number of near-by parallel wirings is an even number or an odd number when the mask data are wiring data, and generating required data respectively. CONSTITUTION:Mask data 1 corresponding to a desired figure, and resolving limit data 2 of a stepper are stored in a storage device, and a preparing means 3 prepares striped pattern data to store them in the storage device. Then, a extracting means 4 reads out data 1 of one layer, a judging means 5 judges whether the data 1 are wiring data or not, a converting means 6 judges whether the number (m) of near-by parallel wirings is an even number or an odd number when the above data are wiring data, and prepares 1/2m pieces of transparent type phase shift mask wiring data when the number of near-by parallel wirings is an even number. When the number of near-by parallel wirings is an odd number, 1/2(m - 1) pieces of the above data are prepared, and one piece of wiring data is added. On the other hand, when the means 5 judges that the mask data are window data, a converting means 7 performs OR graphic logical operation on the striped pattern data and the window data, and generates transparent type phase shift mask window data.

公开(公告)号：JPH02305434A

公开(公告)日：1990-12-19

申请号：JP12725289

申请日：1989-05-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/095 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To enable the high productivity and the high resolving power to be made compatible by a method wherein an ultraviolet ray resist film and an ultraviolet ray absorbing film increasing ultraviolet ray absorption factor by electronic beam irradiation are laminatedly formed on a substrate and then the whole surface is exposed after the pattern exposure to electron beams. CONSTITUTION:An organic film 8 is formed on an ultraviolet ray resist film 6 formed on a semiconductor substrate 1 so as to increase the ultra violet ray absorption factor by electron beam irradiation and then the whole surface is exposed to ultraviolet rays 7 after the pattern exposure to electron beams 5. Through these procedures, the organic film 8 as the upper layer is subjected only to the deterioration in the ultraviolet ray absorption characteristics while the melting rates of exposed part and the not yet exposed part need not be differentiated as required for conventional resist besides the etching resistance is also needless since the organic film 8 will not be used as a mask in the later processes. On the other hand, the organic film 8 is not to be developed suffering no deterioration in the resolving power. Accordingly, the excellent pattern shape can be kept, thereby enabling the high productivity and the high resolving power to be made compatable.

公开(公告)号：JPS6437015A

公开(公告)日：1989-02-07

申请号：JP19296687

申请日：1987-07-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

IPC: H01L21/027 ,  H01L21/30 ,  H01L21/3205 ,  H01L23/52

Abstract: PURPOSE:To enable a very thin conductive film to be formed while avoiding any metallic pollution by a method wherein a substrate is spin-coated with a water or methylalcohol solution of polystyrene sulfonic acid ammonium and then heat treated. CONSTITUTION:A specified substrate is spin-coated with a thinly melted down polystyrene sulfonic acid ammonium water solution. At this time, it is recommended that the weight ratio of plystyrene sulfonic acid ammonium is specified within the range of 5-30%. Next, the substrate is heat treated at the temperature, e.g., not exceeding 250 deg.C. Through these procedures, a conductive organic film containing metallic impurity not exceeding 1ppm and in no danger of metallic pollution can be formed in extremely thin thickness of 0.1-2mum.

公开(公告)号：JPS63204724A

公开(公告)日：1988-08-24

申请号：JP3849887

申请日：1987-02-20

Applicant: MATSUSHITA ELECTRONICS CORP ,  TOSOH CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO ,  HASEGAWA MASAZUMI ,  FUKUDA SANJU

IPC: G03F7/26 ,  G03C1/00 ,  G03C5/00 ,  G03F7/00 ,  G03F7/11 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent a lower layer resist from charging by simple processing by a method wherein one layer of multilayer-structured resist film formed on a substrate is formed into a high polymer film comprising a salt of an anion radical of polystyrene sulfonic acid and a positive charged radical to electron beam exposure process this multilayer-structured resist film. CONSTITUTION:One layer of multilayered structured resist film formed on a substrate 1 is formed into a high polymer thin film 2 comprising a salt of an anion radical of polystyrene sulfonic acid and a positive charged radical to form a resist pattern by means of electron beam exposure processing the multilayered structured resist film. Polystyrene sulfonic acid ammonium, being conductive and water soluble, is subjected to easy control before it is coated as well as easy coating process while filling the role of a no charged film. Through these procedures, a lower layer resist can be prevented from charging without using an Si thin film at all.

公开(公告)号：JPS63181428A

公开(公告)日：1988-07-26

申请号：JP1470287

申请日：1987-01-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent a resist from being charged with electricity by incident electrons by a method wherein one layer of film out of multilayered resist films formed on a substrate is composed of a conductive high-polymer thin film and these multilayered resist films are exposed to an electron beam. CONSTITUTION:A conductive high-polymer thin film 2, e.g., a thin film of polyvinyl alcohol doped with minute particles of carbon, is applied to the surface of a silicon substrate 1. Then, after this assembly has been heat-treated, it is coated with a silicone-related resist 3, e.g. chloromethylated polyphenylsiloxane. After this assembly has been heat-treated furthermore, a two-layer resist is formed. After that, after this assembly has been exposed by an electron beam and then developed, a silicone-related resist pattern is formed. Lastly, after the conductive high-polymer film 2 has been etched by a reactive ion etching method using a gas of O2, a pattern 5 of the conductive high-polymer thin film is formed. By this method, the exposure using the electron beam can be executed by excluding the situation that the assembly is charged with electricity by incident electrons. As a result, the electron beam is not bent, and it is possible to prevent the distortion of a pattern and the displacement of the pattern.

公开(公告)号：JPS63102322A

公开(公告)日：1988-05-07

申请号：JP24873986

申请日：1986-10-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To perform the transfer of a pattern on the lowest layer of an organic thin film at high speed in a highly precise manner by a method wherein a thin film, consisting of the fluoric atom containing material having the specific speed of etching by plasma, is provided on an organic thin film, and dry etching is performed using said thin film as a mask. CONSTITUTION:On an Si substrate 1,1-borax photoresist 2 is applied as an organic thin film, and a heat treatment is performed at 250 deg.C. A coating Al2O3 film 3 is applied thereon, and a heat treatment is performed at 200 deg.C. An electron beam resist such as PMMA (polymethyl methacrylate) 6 is applied, and a prebaking is performed at 170 deg.C. Under the condition of practical pressure of plasma etching, the etching speed of the Al2O3 film 3 is 10 nm/min. or below. Plasma etching is performed using the mixed gas of CF4 of 10% and O2 and a reactive ion etching equipment and also using a coating Al2O3 film 3 pattern as a mask, and a pattern is formed. As a result, the lowest layer of an organic thin film can be etched at high speed in a highly precise manner.