公开(公告)号：JP2004045684A

公开(公告)日：2004-02-12

申请号：JP2002202176

申请日：2002-07-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASHIMOTO SHIGEKI ,  KIKUCHI HIROKI ,  OKA MICHIO

IPC: G02B27/18 ,  G02B27/00 ,  G02B27/48 ,  G03B21/00 ,  G03B21/14 ,  H01S3/10 ,  H01S3/101

CPC classification number: G02B27/143 ,  G02B19/0028 ,  G02B19/0057 ,  G02B27/1033 ,  G02B27/123 ,  G02B27/144 ,  G02B27/48 ,  G02B2207/117 ,  H04N9/3129

Abstract: PROBLEM TO BE SOLVED: To provide an image display device such as a projection display for reducing speckle noise and reducing the degradation of image quality. SOLUTION: In an illumination optical device in the image display device 1 for displaying images by irradiating a GLV (space modulation element) 6 with a laser beam L and modulating the laser beam on the basis of image signals inputted to the GLV, the GLV is irradiated with a plurality of the laser beams l with an optical path difference longer than the coherence length of the laser beams. COPYRIGHT: (C)2004,JPO

公开(公告)号：JPH11204885A

公开(公告)日：1999-07-30

申请号：JP256598

申请日：1998-01-08

Applicant: SONY CORP

Inventor： FUNATO KENJI ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI

IPC: C30B29/40 ,  H01L21/205 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a nitride III-V group compound semiconductor layer and a method of manufacturing a semiconductor device. SOLUTION: When an in-free nitride III-V group compound semiconductor layer 13 is grown on a substrate 11 formed of material other than nitride III-V group compound semiconductor through a chemical vapor deposition method, the III-V ratio of deposition material is set at 8000 or above preferably 10,000 or above, more preferably 11,000 or above. When an In-containing nitride III-V group compound semiconductor layer 17 is grown on a substrate 11 formed of material other than nitride III-V group compound semiconductor through a chemical vapor deposition method, the V-III-ratio of deposition material is set at 10000 or above, preferably 13,000 or above, more preferably 14,000 or above.

公开(公告)号：JP2009206533A

公开(公告)日：2009-09-10

申请号：JP2009146321

申请日：2009-06-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO ,  NAKAJIMA HIROSHI

IPC: H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element using a nitride-based Group III-V compound semiconductor, which reduces the threshold current density without increasing the operation voltage practically.
SOLUTION: A p-type clad layer of a GaN-based semiconductor laser is configured by two or more semiconductor layers having different band gaps from one another, and a part of an active layer side of the p-type clad layer is configured by a semiconductor layer having a band gap greater than that of the other parts. Specifically, in the GaN-based semiconductor laser with an AlGaN/GaN/GaInN SCH structure, a p-type AlGaN clad layer 10 is configured of: a p-type Al
x1 Ga
1-x1 N layer 10a in contact with a p-type GaN optical waveguide layer 9; and a p-type Al
x2 Ga
1-x2 N layer 10b on the p-type Al
x1 Ga
1-x1 N layer 10a (here, 0≤x2

Abstract translation: 要解决的问题：提供一种使用氮化物基III-V族化合物半导体的半导体发光元件，其在实际上不增加操作电压的情况下降低阈值电流密度。 解决方案：GaN基半导体激光器的p型覆盖层由具有彼此不同带隙的两个或更多个半导体层构成，并且p型覆层的有源层侧的一部分为 由具有比其它部分的带隙大的带隙的半导体层构成。 具体地，在具有AlGaN / GaN / GaInN SCH结构的GaN基半导体激光器中，p型AlGaN覆盖层10由p型AlGaN / 与p型GaN光波导层9接触的x1 / N层10a; 和p型Al x1 1-x1 上的p型Al x2 Ga 1-x2 < / SB> N层10a（这里，0≤x2

公开(公告)号：JP2006343413A

公开(公告)日：2006-12-21

申请号：JP2005167018

申请日：2005-06-07

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI

IPC: G03B21/00 ,  G02F1/13 ,  G02F1/1335 ,  G02F1/13357

Abstract: PROBLEM TO BE SOLVED: To reduce speckle by arranging a diffuser having wavelength selectivity at an intermediate image forming position and also to sufficiently extend luminous flux of every wavelength relative to the diameter of the entrance pupil of a projection optical system without remarkably lowering the efficiency of using light. SOLUTION: The image producing device 1 is constituted by arranging: a light source part having coherent light sources (2R, 2G and 2B) having different wavelength; an optical system 6 receiving light from the light source part and forming an intermediate image; a light scattering part 7 arranged at the intermediate image forming position; and a projection optical system 8 arranged at the post-stage of the light scattering part. The light scattering part 7 is constituted to scatter the light for every wavelength by using a plurality of diffraction gratings having the wavelength selectivity for each wavelength of the light source. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2005311133A

公开(公告)日：2005-11-04

申请号：JP2004127184

申请日：2004-04-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASHIMOTO SHIGEKI ,  KIMURA MITSUSHI ,  ACHINAMI TORU ,  EDA RYUJI

IPC: H01S5/068

Abstract: PROBLEM TO BE SOLVED: To ensure a stable optical output in spite of a temperature variation in light source equipment using a semiconductor laser. SOLUTION: This light source equipment 1 using a laser light source 2 comprises a temperature detecting means 3 for detecting the temperature of the laser light source 2, a control means 4 for keeping the optical output of the laser light source 2 constant in spite of short-term temperature change, and a power supply unit 5 for supplying power to the laser light source 2 based on the signal received from the control means 4. A current control means 4c uses only the temperature detected by the temperature detecting means 3 as the input information thereof, and sends out a current value controlling signal computed from the temperature information to the power supply unit 5. As a result, the current supplied from the power supply unit 5 to the laser light source 2 is controlled to keep the optical output thereof constant. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：尽管使用半导体激光器的光源设备的温度变化，确保稳定的光输出。 解决方案：使用激光光源2的光源设备1包括用于检测激光光源2的温度的温度检测装置3，用于保持激光光源2的光输出恒定的控制装置4 尽管短期温度变化，以及基于从控制装置4接收的信号向激光光源2供电的电源单元5.电流控制装置4c仅使用由温度检测装置3检测到的温度 作为其输入信息，并将从温度信息计算出的电流值控制信号发送到电源单元5.结果，控制从电源单元5向激光光源2提供的电流，以保持 光输出恒定。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005072037A

公开(公告)日：2005-03-17

申请号：JP2003208471

申请日：2003-08-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SAKURAI MICHIHIKO ,  FUKUMOTO ATSUSHI ,  HASHIMOTO SHIGEKI

IPC: H01S3/10 ,  H01S3/07

Abstract: PROBLEM TO BE SOLVED: To provide a light source device where the number of excitation light sources of excitation light for exciting the gain medium of an optical amplification section is smaller than that of the optical amplifier for amplifying seed light, excitation light from a common excitation light source is introduced at least at one portion of a plurality of optical amplifiers, optical amplification to the seed light having mutually different wavelength regions is made by the gain medium having a sufficient gain to each wavelength in the plurality of optical amplifiers, and to provide an optical device having the light source device and a projector. SOLUTION: In the light source device, optical device, and projector; excitation light from the common excitation light source is introduced at least at one portion of the plurality of optical amplifiers and optical amplification to the seed light at mutually different wavelength regions is made by the gain medium having a sufficient gain to each wavelength in the plurality of optical amplifiers. Then, a device configuration element can be decreased and the utilization efficiency of the excitation light can be improved by the position relationship between each gain medium having a different level system and an excitation light source in the plurality of optical amplifiers. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种光源装置，其中用于激发光放大部分的增益介质的激发光的激发光源的数量小于用于放大种子光的光放大器的激发光源的数量，来自 至少在多个光放大器的一部分上引入共同的激发光源，对具有相互不同的波长区域的种子光进行光放大，由对多个光放大器中的每个波长具有足够增益的增益介质进行， 并提供具有光源装置和投影仪的光学装置。

解决方案：在光源设备，光学设备和投影仪中; 至少在多个光放大器的一部分引入来自公共激发光源的激发光，并且通过对多个光放大器中的每个波长具有足够的增益的增益介质，在相互不同的波长区域对种子光进行光放大 光放大器。 然后，可以通过多个光放大器中的具有不同电平系的每个增益介质和激发光源之间的位置关系来降低激发光的利用效率。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003298110A

公开(公告)日：2003-10-17

申请号：JP2003119604

申请日：2003-04-24

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To enable an n-type AlGaN clad layer and a p-type AlGaN clad layer, which are both superior in quality, to grow so as to manufacture a high- performance semiconductor laser. SOLUTION: In a method of manufacturing a GaN semiconductor laser, the growth temperature of the p-type AlGaN clad layer is set lower than that of the n-type AlGaN clad layer, and the growth temperatures of the p-type AlGaN clad layer and the n-type AlGaN clad layer are set equal to that of a GaInN active layer or above and set at 980°C or below, e.g. 930 to 960°C. It is preferable that the surface of a base is covered with a p-type AlGaN cap layer which has been grown at the growth temperature nearly equal to that of the GaInN active layer or below before the p-type AlGaN clad layer is grown. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了使得质量优异的n型AlGaN包层和p型AlGaN包层生长以制造高性能半导体激光器。 解决方案：在制造GaN半导体激光器的方法中，将p型AlGaN包覆层的生长温度设定为低于n型AlGaN包覆层的生长温度，并且p型AlGaN的生长温度 将n型AlGaN覆盖层设定为等于GaInN有源层以上且设定在980℃以下，例如 930至960℃。 优选的是，在p型AlGaN覆盖层生长之前，在与GaInN有源层的生长温度几乎相同的生长温度下生长的p型AlGaN覆盖层覆盖基底的表面。 版权所有（C）2004，JPO

公开(公告)号：JP2001345520A

公开(公告)日：2001-12-14

申请号：JP2000166598

申请日：2000-06-02

Applicant: SONY CORP

Inventor： NAKAJIMA HIROSHI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI

IPC: G11B7/125 ,  G11B7/22 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride based III-V compound semiconductor light-emitting element of high quality, in which indium is prevented from being captured into an upper layer of a layer containing indium and crystallinity of the upper layer of the layer containing indium is improved. SOLUTION: This method of manufacturing a semiconductor light-emitting element has a process, in which a III-V compound semiconductor layer containing nitrogen is formed through by crystal growth to take place. A first semiconductor layer (16) as the III-V compound semiconductor containing indium and nitrogen is grown at a first temperature. A second semiconductor layer (18), composed of AlxGa1-xN (where 0

公开(公告)号：JP2000244070A

公开(公告)日：2000-09-08

申请号：JP4170899

申请日：1999-02-19

Applicant: SONY CORP

Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve conductivity by making current easy to flow across a hetero interface in a semiconductor device or a semiconductor light-emitting element containing the hetero interface where two nitride III-V compound semiconductor layers different from each other are in contact with each other and a band discontinuity exists. SOLUTION: In a semiconductor device or a semiconductor light-emitting element containing a hetero interface where two nitride III-V compound semiconductor layers different from each other are in contact with each other and a band discontinuity exists, a superlattice layer or a composition gradient layer extinguishing or decreasing the band discontinuity falsely is inserted in the hetero interface. In a GaN semiconductor laser, an n-type AlGaN/GaN superlattice layer 5 or an n-type AlGaN graded layer is inserted in a hetero interface between an n-type GaN contact layer 4 and an n-type AlGaN clad layer 6, and a p-type AlGaN/GaN superlattice layer 12 or a p-type AlGaN graded layer is inserted in a hetero interface between a p-type AlGaN clad layer 11 and a p-type GaN contact layer 13.

公开(公告)号：JPH1174203A

公开(公告)日：1999-03-16

申请号：JP16975998

申请日：1998-06-17

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  HASHIMOTO SHIGEKI ,  NAKAMURA FUMIHIKO ,  YANASHIMA KATSUNORI ,  IKEDA MASAO

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for growing a nitride III-V compound semiconductor which enables efficient growth of a nitride-based III-V compound semiconductor of high quality. SOLUTION: The pressure inside a reaction tube 1 of an MOCVD device is set at not less than 1.1 atm., particularly not less than 1.1 atm. and not more than 2 atm., preferably 1.2-1.8 atm., and a nitride-based III-V compound semiconductor, for example, GaN, InGaN or the like is grown. The reaction tube 1 is made of quartz glass so as to obtain sufficient strength for withstanding the difference between inner and outer pressures. The surface of a substrate 3 on which the nitride-based III-V compound semiconductor may face upward or downward.