公开(公告)号：JPH0496390A

公开(公告)日：1992-03-27

申请号：JP21485890

申请日：1990-08-14

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  HONDA KAZUO

IPC: G02B6/42 ,  H01L33/58 ,  H01L33/62 ,  H01L33/64 ,  H01S5/00

Abstract: PURPOSE:To reduce size, weight and cost and to raise heat dissipating characteristic by securing a hollow vessel formed with a predetermined conductive pattern on a metal frame, securing a light emitting element and the end of an optical fiber in the vessel, and securing it at the part of a frame. CONSTITUTION:A ceramic vessel 2 formed of a first member 2a formed with an inner lead pattern 13 on its upper surface, second and third members 2b, 2c formed with outer lead patterns 15, 16 at its outside, and a cover, is secured on a metal frame 1, and a laser diode LD and the end 3a of an optical fiber 3 are secured on the frame 1 in the vessel 2 through first and second submounts 5, 6. Accordingly, a lead frame having an outer terminal is omitted, size, weight and cost are reduced, and heat dissipating characteristic of a package A is improved. Since a sheath 3b is secured by a securing belt 1a in the fiber 3, optical axis alignment of the diode LD and the fiber 3 can be accurately performed.

公开(公告)号：JPH03108391A

公开(公告)日：1991-05-08

申请号：JP24619889

申请日：1989-09-21

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  OIKAMI HIROSHI ,  AIDA YOSHIMASA

IPC: H01S5/00

Abstract: PURPOSE:To reduce a stray light fraction and also stroke between an optical input and an output by mounting an optical integrated circuit on a substrate disposed to traverse the optical path of the optical integrated circuit, and providing optically transparent holes through the substrate at locations corresponding to the optical path. CONSTITUTION:An optical integrated circuit 72 is mounted on a substrate 73 disposed to traverse an optical path of the integrated circuit, and an optical through-hole 79 is provided at a location in the substrate 73 corresponding to the optical path. An optical input to and an optical output from the optical integrated circuit 72 selectively pass through the transparent hole 79 through the substrate 73. Accordingly, a stray light fraction other than the input light is blocked by the substrate 73 and the input signal light passing only through the transparent hole 79 can be prevented from being mixed with the stray light. Further, any stroke between the optical input and output can be reduced.

公开(公告)号：JPS61208221A

公开(公告)日：1986-09-16

申请号：JP4915085

申请日：1985-03-12

Applicant: SONY CORP

Inventor： MATSUDA OSAMU

IPC: H01L31/12 ,  H01L21/302 ,  H01L21/3065 ,  H01S5/00

Abstract: PURPOSE:To allow different angles of inclination of the side of each projection remaining under an etching mask by etching a projection forming material layer with such a mask as to cover the range from the region partially altered to the one unaltered in the etching rate of the said layer. CONSTITUTION:The surface part of N-type silicon semiconductor substrate 1 is coated with a N type semiconductor layer 2, on which a P-type semiconduc tor region 3 is formed. Further a nitride film 5 is made on a silicon oxide film 4 composing the semiconductor surface. A photoresist film 6 is selectively formed on the surface of the film 5, which is implanted with ions of elements such as Ar to partially form a region having etching rate increased. Succeedingly a resist film 8 is formed over the range of the film 5 from part of the region not implanted with ions to part of the region 7, and is used as an etching mask in wet etching of a projection forming material layer 5 to form projections being composed of nitride under the film 8. The angle alpha of inclination of one side of each projection differs from that, beta, of the opposite side and alpha

公开(公告)号：JP2001127002A

公开(公告)日：2001-05-11

申请号：JP30551999

申请日：1999-10-27

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE SEIICHI

IPC: H01L21/268 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To easily activate an impurity at a target of a semiconductor with a high activation rate and satisfactory uniformity. SOLUTION: At the time of activating impurity by irradiating a semiconductor, to which impurity is doped, for example, a GaN nitride 3-5 compound semiconductor to which p-type impurity such as Mg is doped, with lights, especially, laser beams. Photor energy for which the absorption coefficient of semiconductor can be set as α=1/d, where (d) is the thickness of the semiconductor whose is to be activated impurity is defined as a measured band gap Eg-real of the semiconductor, and light beams with photon energy within the range of Eg-real ±0.5 eV are used. In this case, the temperature of the substrate may be changed while the semiconductor is irradiated with the light beams. This method for activating impurity can be used for forming a p-type layer at the time of manufacturing a GaN semiconductor with laser.

公开(公告)号：JPH11307870A

公开(公告)日：1999-11-05

申请号：JP11256998

申请日：1998-04-22

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  KOBAYASHI TOSHIMASA ,  NAKAYAMA NORIKAZU ,  KAWAI HIROHARU

IPC: H01L21/301 ,  H01L21/02 ,  H01L21/18 ,  H01L21/20 ,  H01L21/338 ,  H01L21/8252 ,  H01L29/812 ,  H01L31/0232 ,  H01L33/48 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device using a nitride base III-V family compound semiconductor which is appropriate to a semiconductor laser, a light emitting diode and the like. SOLUTION: A GaN base semiconductor laser wafer is prepared by forming multiple semiconductor lasers on an AlGaInN base semiconductor layer 20 on a chamfered sapphire substrate 11, in such a way that they are separated from one another by grooves 24 reaching the substrate 11 and forming a p side electrode 21 and an n side electrode 22. Then the wafer is adhered to an Si wafer containing photodiodes on which photodiodes for light output monitor and solder layers 34 and 36 are formed for each pellet. The electrodes 21 and 22 are adhered to the semiconductor layers 34 and 36 respectively. The semiconductor lasers on the Si wafer containing photodiodes are separated from one another by lapping the substrate 11 from the underside up to the grooves 24 or dicing the substrate 11 from the underside. The Si wafer is separated into pellets by dicing and packages are formed.

公开(公告)号：JPH09307095A

公开(公告)日：1997-11-28

申请号：JP12177796

申请日：1996-05-16

Applicant: SONY CORP

Inventor： NARUI HIRONOBU ,  MIZUNO TAKESHI ,  MATSUDA OSAMU

IPC: H01L27/15 ,  H01S5/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To reduce the manufacturing man-hours and prevent the positional deviation even affected by a high temperature, a high moisture, etc., by forming a semiconductor laser, a light receiving element and a start-up mirror on a semiconductor substrate all by semiconductor manufacturing technologies. SOLUTION: On a semiconductor substrate 1, a semiconductor laser 2 is formed, and on the semiconductor laser 2, a plurality of light receiving elements 3 are formed. A reflecting face inclining approximately at 45 deg. from the light emitting face 2b and the light receiving plane 3c of the semiconductor laser 2 is provided, and on the reflecting face, a reflecting coat 6a is formed on the part whereupon the laser beams projected from the light emitting face 2b is directly applied. On the part whereupon the laser beams are not directly applied, a non-reflecting coat 6b is formed. A start-up mirror 6 is provided, having a boundary between the reflecting coat 6a and the non-reflecting coat in parallel to the optical axis of the laser beams. Thus, the optical integrated circuit is highly accurately and easily formed on the semiconductor substrate 1 with the reduced manufacturing man-hour.

公开(公告)号：JP2517929B2

公开(公告)日：1996-07-24

申请号：JP26004486

申请日：1986-10-31

Applicant: SONY CORP

Inventor： KOMA KOTARO ,  MATSUDA OSAMU

IPC: H01L31/12 ,  H01L21/321 ,  H01L21/60 ,  H01S5/00

公开(公告)号：JPH0821754B2

公开(公告)日：1996-03-04

申请号：JP23696286

申请日：1986-10-04

Applicant: SONY CORP

Inventor： MATSUDA OSAMU

IPC: H01L31/12 ,  H01S5/00 ,  H01S3/18

公开(公告)号：JPH07296441A

公开(公告)日：1995-11-10

申请号：JP9255994

申请日：1994-04-28

Applicant: SONY CORP

Inventor： SAWARA KENJI ,  NARUI HIRONOBU ,  DOI MASATO ,  MATSUDA OSAMU

IPC: G11B11/10 ,  G11B7/12 ,  G11B7/123 ,  G11B7/125 ,  G11B7/127 ,  G11B7/13 ,  G11B7/135 ,  G11B7/1353 ,  G11B7/1365 ,  G11B11/105 ,  H01L31/0232 ,  H01L31/153 ,  H01S5/026 ,  H01S5/18

Abstract: PURPOSE:To obtain a cross positional relation of high accuracy and to facilitate matching by integral constitution by arranging a light receiving part near a co-focal position in a light emitting part existing in the co-focal position of an optical lens. CONSTITUTION:A light receiving part 4 and a light receiving part 5 are integrated. A part 2 to be irradiated is convergently irradiated. The reflected light is condensed by a lens 3 and is made incident on a photodiode of the light receiving part 5 near the co-focus. The return light LR heading toward the light receiving part 5 is converged near to the light diffraction threshold. The light receiving surface of part of the light receiving part 5 is disposed within 1.22lambda/NA from an exit light axis (a). NA is a numerical aperture of the lens 3. The return light LR is detected by surely separating this light from the exit light when the light receiving part surface is arranged in a position including a region larger than the distance phis/2 and within phid/2. The easy and sure setting of the light emitting part 4 and the light receiving part 5 at the prescribed positional relation is made possible necessarily sufficiently by integrating and building both into the common substrate 6 in such a manner.

公开(公告)号：JPH07242008A

公开(公告)日：1995-09-19

申请号：JP5675094

申请日：1994-03-02

Applicant: SONY CORP

Inventor： OGAWA MASAMICHI ,  DOI MASATO ,  MATSUDA OSAMU

IPC: B41J2/44 ,  B41J2/32 ,  H01S5/00 ,  H01S5/026 ,  H01S3/18

Abstract: PURPOSE:To obviate or facilitate the position adjustment between a heat beam emission section and a recording material vaporization section by a method wherein the recording material vaporization section and heat beam emission section are provided on a common base body and the recording material is vaporized by the emission of the heat beam to be transfirred to a recording body. CONSTITUTION:A print head 40 used in a laser beam printer is so constituted that a laser section 80 consisting of a semiconductor laser device 58 and a vaporization section 47 of a vaporization dye (liquid dye) 52 are provided on a semiconductor substrate 54 of a common board adjacent to each other. The laser section 80 for heating to vaporize the dye 52 is provided on the semiconductor substrate 54 formed of a first conductive GaAs or the like. The semiconductor substrate 54 is so constituted that a clad layer 60 formed of a first conductive AlGaAs or the like, active layer 61 formed of, for example, intrinsic GaAs and a clad layer 62 formed of second conductive AlGaAs or the like are sequentially laminated on a main face 54S.