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21.发明专利Micro-resonator, band pass filter, semiconductor device and communication equipment 有权微型谐振器，带通滤波器，半导体器件和通信设备
公开(公告)号：JP2007013447A
公开(公告)日：2007-01-18
申请号：JP2005190269
申请日：2005-06-29
Inventor： MORITA SHINYA , KINOSHITA TAKASHI , TANAKA NAOHIRO , TADA MASAHIRO , MITARAI TAKASHI
CPC classification number: H03H3/0073 , H03H3/0072 , H03H9/02244 , H03H9/02433 , H03H9/2463 , H03H2009/02511
Abstract: PROBLEM TO BE SOLVED: To suppress signal leakage through a parasitic capacity in a micro-resonator constituted of an electrostatically driven beam type resonator, to widen the band of a band pass filter by using the micro-resonator, and to increase the reliability of a semiconductor device and communication equipment equipped with the micro-resonator. SOLUTION: This micro-resonator is constituted of a beam type resonator 311, and a beam 36 formed as the vibrating part of the resonator 311 is provided with a high resistance part or an insulating part 361a. The beam 36 is constituted of at least two or more layers, and a portion of an upper layer and the lowermost layer continued to this is formed of a high resistance or an insulator. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：为了通过由静电驱动光束型谐振器构成的微谐振器中的寄生电容来抑制信号泄漏，通过使用微谐振器来扩大带通滤波器的频带，并且增加 具有微型谐振器的半导体器件和通信设备的可靠性。 解决方案：该微型谐振器由光束型谐振器311构成，并且形成为谐振器311的振动部分的光束36设置有高电阻部分或绝缘部分361a。 光束36由至少两层或更多层构成，上层的一部分和与其连续的最下层由高电阻或绝缘体形成。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2006108502A
公开(公告)日：2006-04-20
申请号：JP2004295180
申请日：2004-10-07
Inventor： TADA MASAHIRO , ITO YASUYUKI , TANAKA NAOHIRO , MITARAI TAKASHI
IPC: H01G7/02
Abstract: PROBLEM TO BE SOLVED: To provide a micro capacitor capable of changing capacity by simple constitution, and securing and stabilizing the capacity. SOLUTION: The micro capacitor is provided with capacitors 11, 12 constituting a plurality of capacitors C, a dielectric film, a driving electrode 14, and a single power supply and constituted so that the lengths L1 of the displacing positions of respective electrode 11P in the capacity 11 is coincident with each other, and the lengths L2 of respective driving electrodes 14A in the driving electrode 14 are mutually different. When voltage to be applied from the single power supply to the driving electrode 14 is gradually changed in each of the driving electrodes 14A, the micro capacitor is successively switched based on differences of pull-In voltages among respective capacitors, thus changing the capacity. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种能够通过简单的结构改变容量并且确保和稳定容量的微型电容器。 ＆lt; P＆gt;解决方案：微电容器设置有构成多个电容器C的电容器11,12，电介质膜，驱动电极14和单个电源，并且构成为使各电极的位移位置的长度L1 11P的电容11彼此一致，并且驱动电极14中的各个驱动电极14A的长度L2相互不同。 当在每个驱动电极14A中逐渐改变从单个电源施加到驱动电极14的电压时，基于各个电容器之间的拉入电压的差别，依次切换微电容器，从而改变容量。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005318217A
公开(公告)日：2005-11-10
申请号：JP2004133035
申请日：2004-04-28
Inventor： NANBADA KOJI , MITARAI TAKASHI , TANAKA NAOHIRO , TADA MASAHIRO
CPC classification number: H03H9/525 , H03H9/2463
Abstract: PROBLEM TO BE SOLVED: To realize a filter having a wide specific bandwidth using a plurality of microresonators.
SOLUTION: A plurality of microresonators 15, 16, 17 and 18 having a beam structure are electrically connected in lattice between two input terminals 11 and 12 for balanced input and two output terminals 13 and 14 for balanced output. Each of the plurality of microresonators 15, 16, 17 and 18 comprises a resonator group including a plurality of resonators, having different resonance frequencies.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：使用多个微谐振器来实现具有宽的特定带宽的滤波器。 解决方案：具有光束结构的多个微谐振器15,16,17和18在两个用于平衡输入的输入端子11和12之间格格地电连接，并且两个输出端子13和14用于平衡输出。 多个微谐振器15,16,17和18中的每一个包括具有不同共振频率的包括多个谐振器的谐振器组。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2000307071A
公开(公告)日：2000-11-02
申请号：JP11568899
申请日：1999-04-23
Applicant: SONY CORP
Inventor： ASANO KATSUAKI , ITO YASUYUKI , MITARAI TAKASHI , OCHIAI AKIHIKO
IPC: H01L21/8247 , H01L21/02 , H01L21/28 , H01L21/285 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To prevent a contact failure and a degradation in transistor characteristics from occurring in a semiconductor memory device, by a method wherein a diffusion barrier layer, which is thermally stable, electrically conductive, and high in barrier properties to oxygen, the component elements of plug material, and lower electrode of precious metal, is provided between the plug and the lower electrode. SOLUTION: A semiconductor memory device 10 is equipped with a dielectric capacitor 31 composed of a first electrode (lower electrode) 32, a dielectric film 33, and a second electrode (upper electrode) 34; and a conductive plug 15 connected to the lower electrode 32. The lower electrode 32 connected to the conductive plug 15 is equipped with a conductive metal lower oxide layer 51, and a diffusion barrier layer 52 which stops diffusion of oxygen. The oxide layer 51 and the diffusion barrier layer 52 are laminated on the conductive plug 51 in this sequence.
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公开(公告)号：JP2011049397A
公开(公告)日：2011-03-10
申请号：JP2009197153
申请日：2009-08-27
Inventor： MITARAI TAKASHI , SOTOZAKI MINEHIRO , IKEDA KOICHI
CPC classification number: H01F17/0006 , H01F2017/0046 , H01L2224/16225
Abstract: PROBLEM TO BE SOLVED: To provide a high-frequency device having a membrane structure with an improved mechanical strength. SOLUTION: A stopper layer 12 (first dielectric layer) and a dielectric layer 13 (second dielectric layer) acting as an element forming layer are provided in this order on a substrate 11 having an opening 15, and a high-frequency element 14 (inductor) is provided on the dielectric layer 13 in a position opposing the opening 15. In the opening 15, a reinforcing structure 18 is provided simultaneously when the opening 15 is formed by patterning the substrate 11. The reinforcing structure 18 has a pattern that divides the inside of the opening 15 into a plurality of regions. The stopper layer 12 prevents the dielectric layer 13 from being damaged when etching the substrate 11, and the reinforcing structure 18 increases the mechanical strength of a membrane 17. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供具有改进的机械强度的膜结构的高频装置。 解决方案：作为元件形成层的阻挡层12（第一电介质层）和电介质层13（第二电介质层）依次设置在具有开口15的基板11上，高频元件 在电介质层13上设置有与开口15相对的位置的电感器14（电感器）。在开口15中，当通过对基板11进行构图而形成开口15时，同时提供加强结构18.加强结构18具有图案 其将开口15的内部分成多个区域。 阻挡层12防止在蚀刻基板11时电介质层13受损，增强结构18增加膜17的机械强度。版权所有（C）2011，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2011040882A
公开(公告)日：2011-02-24
申请号：JP2009184674
申请日：2009-08-07
Inventor： AKIBA AKIRA , MITARAI TAKASHI , IKEDA KOICHI
CPC classification number: H01L23/5227 , H01L23/5223 , H01L23/5228 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , H03H7/0115 , H03H7/175 , H03H7/1775 , H03H2001/0064 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a compact high frequency device which controls the occurrence of eddy current and parasitic capacitance, and has excellent high frequency characteristics.
SOLUTION: A bandpass filter BPF is provided in a dielectric layer 13 on a board 11 that has an opening 14. The BPF has composed of a couple of a first inductive element L1 and a first capacitive element C1, a couple of a second inductive element L2 and a second capacitive element C2, and a couple of a third inductive element L3 and a third capacitive element C3. The opening 14 is provided at a position opposing to the first inductive element L1. The occurrence of parasitic capacity and eddy current is controlled directly under the first inductive element L1 by providing the opening 14 on the board 11, so that signal loss is reduced and the characteristics of the filter circuit are improved.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供一种控制涡电流和寄生电容的发生的紧凑型高频装置，并且具有优异的高频特性。 解决方案：带通滤波器BPF设置在具有开口14的基板11上的电介质层13中.BPF由一对第一电感元件L1和第一电容元件C1组成， 第二电感元件L2和第二电容元件C2，以及一对第三感应元件L3和第三电容元件C3。 开口14设置在与第一电感元件L1相对的位置处。 寄生电容和涡电流的发生通过在电路板11上设置开口14直接控制在第一电感元件L1之下，从而降低信号损耗并提高滤波电路的特性。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2008062319A
公开(公告)日：2008-03-21
申请号：JP2006240675
申请日：2006-09-05
Inventor： MITARAI TAKASHI , TADA MASAHIRO
IPC: B81B3/00 , H01L23/02 , H04B1/3822 , H04B1/40
CPC classification number: B81B7/0038 , B81B2201/0271 , B81C2203/0145
Abstract: PROBLEM TO BE SOLVED: To provide a functional element which has improved reliability by suppressing an effect on a functional portion in forming a film. SOLUTION: A movable portion 11, a sealing layer 12, and a wall portion 13 are provided on the surface of a substrate 10. The sealing layer 12 has a domelike shape forming an internal space 14 around the movable portion 11. An opening portion 15 is provided in the region of the sealing layer 12 except the region opposed to the movable portion 11. The wall portion 13 is formed between the movable portion 11 and the opening portion 15 so as not to separate the internal space 14, and forms a space (a shadow space 19) in the internal space 14, the shadow space being not crossed by straight lines which penetrate the opening portion 15 and also do not penetrate the sealing layer 12 and the wall portion 13. The movable portion 11 is arranged in the shadow space 19. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供通过抑制对形成膜的功能部分的影响而提高可靠性的功能元件。 解决方案：可移动部分11，密封层12和壁部分13设置在基板10的表面上。密封层12具有形成围绕可动部分11的内部空间14的圆顶形状。 开口部15设置在密封层12的与可动部11相对的区域以外的区域。壁部13形成在可动部11与开口部15之间，以不分离内部空间14， 在内部空间14中形成空间（阴影空间19），阴影空间不穿过穿透开口部分15的直线，也不穿透密封层12和壁部分13.可动部分11是 安排在阴影空间19中。（C）2008年，JPO＆INPIT
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公开(公告)号：JP2007253265A
公开(公告)日：2007-10-04
申请号：JP2006079082
申请日：2006-03-22
Inventor： MITARAI TAKASHI , YANAGAWA SHUSAKU , IKEDA KOICHI , TADA MASAHIRO
IPC: B81C1/00
Abstract: PROBLEM TO BE SOLVED: To improve airtightness and safety of encapsulation in a method for manufacturing an electric machine element.
SOLUTION: This method includes a step for forming a sacrificial layer to coat an electric machine element, a step for forming an overcoating film 29 on the sacrificial layer and forming an opening 30 communicated with the sacrificial layer on the overcoating film 29, a step for removing the sacrificial layer through the opening 30, and a step for sealing the opening 30 by the same membrane 34 as the overcoating film 29.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：为了提高电机元件制造方法中的封装的气密性和安全性。 解决方案：该方法包括用于形成用于涂覆电机元件的牺牲层的步骤，在牺牲层上形成外涂层29并形成与外涂膜29上的牺牲层连通的开口30的步骤， 通过开口30去除牺牲层的步骤，以及通过与外涂膜29相同的膜34密封开口30的步骤。版权所有（C）2008，JPO＆INPIT
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29.发明专利
公开(公告)号：JP2006222562A
公开(公告)日：2006-08-24
申请号：JP2005032084
申请日：2005-02-08
Applicant: SONY CORP
Inventor： MORITA SHINYA , KINOSHITA TAKASHI , MITARAI TAKASHI
Abstract: PROBLEM TO BE SOLVED: To provide a minute resonator of a single structure, capable of outputting signals with two resonance frequencies and inverted in phase to each other, wherein the different resonance frequencies can be adjusted independently. SOLUTION: The minute resonator includes a vibration part 6 supported in a hollow part by support sections 8 (8A, 8B), and an input electrode 3 and an output electrode 4, acting as lower electrodes opposite to the vibration part 6 with the hollow part inbetween, the input electrode 3 and the output electrode 4 are arranged facing each other along a line segment in crossing with the vibration part 6, the vibration part 6 causes twist vibration and deflection vibration, and phases of output signals with the two resonance frequencies close to each other in different resonance modes are shifted with respect to each other by 180 degrees. COPYRIGHT: (C)2006,JPO&NCIPI
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30.发明专利
公开(公告)号：JP2006109229A
公开(公告)日：2006-04-20
申请号：JP2004294891
申请日：2004-10-07
Inventor： TADA MASAHIRO , TANAKA NAOHIRO , MITARAI TAKASHI , NANBADA KOJI
CPC classification number: H03H3/0072 , H03H9/02259 , H03H9/02433 , H03H9/2463 , H03H9/462 , H03H9/525 , H03H2009/02511
Abstract: PROBLEM TO BE SOLVED: To ensure frequency characteristics by suppressing the influence of interference that occurs between resonator elements, although it is necessary to construct an aggregate body structure by arraying a plurality of resonators in a two-dimensional manner in order to properly reduce impedance when applying, to a high-frequency filter, micro-resonator elements formed using a semiconductor process. SOLUTION: Each of resonator elements includes an input electrode, an output electrode and a diaphragm extending in a predetermined direction and passes a signal of a predetermined frequency, and the plurality of resonator elements are arrayed on a substrate over a plurality of columns. In a plurality of resonator elements F, each of a plurality of resonator elements arrayed on a column N1 has a phase P1 while each of a plurality of resonator elements arrayed on a column N2 has a phase P2 that becomes an inverse phase to the phase P1. Thus, since the influence of interference that occurs between the resonator elements F is suppressed, frequency characteristics are hardly deteriorated. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：为了通过抑制在谐振器元件之间发生的干扰的影响来确保频率特性，尽管需要通过以二维方式排列多个谐振器来构造集体体结构，以便适当地 当将使用半导体工艺形成的微谐振元件应用于高频滤波器时，减小阻抗。 解决方案：每个谐振器元件包括输入电极，输出电极和在预定方向上延伸并且通过预定频率的信号的光阑，并且多个谐振器元件在多个列上排列在基板上 。 在多个谐振器元件F中，排列在列N1上的多个谐振器元件中的每一个具有相位P1，而排列在列N2上的多个谐振元件中的每一个具有与相位P1成反比的相位P2 。 因此，由于抑制了在谐振器元件F之间发生的干扰的影响，所以频率特性几乎不劣化。 版权所有（C）2006，JPO＆NCIPI
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