公开(公告)号：DE3218971A1

公开(公告)日：1983-01-20

申请号：DE3218971

申请日：1982-05-19

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  NOGUCHI TAKASHI ,  OHTSU TAKAJI

IPC: H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/14 ,  H04N5/197

公开(公告)号：GB2169442B

公开(公告)日：1988-01-06

申请号：GB8529007

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L29/02 ,  H01L29/78

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：DE3540452A1

公开(公告)日：1986-06-05

申请号：DE3540452

申请日：1985-11-14

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  NOGUCHI TAKASHI

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L21/18

Abstract: A method of manufacturing a thin film transistor comprises forming a thin polycrystalline semiconductor film 4 on a substrate 1, implanting ions in the thin polycrystalline semiconductor film to form a thin amorphous semiconductor film, forming a gate insulating film 8 and a gate electrode 7 on the thin amorphous semiconductor film, doping impurities for forming source and drain regions 9, 10 in the thin amorphous semiconductor film using the gate electrode 7 and the gate insulating film 8 as masks, and performing annealing for solid-phase growing the thin amorphous semiconductor film and at the same time for electrically activating the impurities to form the source and drain regions 9, 10.

公开(公告)号：AT17541T

公开(公告)日：1986-02-15

申请号：AT82301110

申请日：1982-03-04

Applicant: SONY CORP

Inventor： NISHIMURA TOSHIMICHI ,  NOGUCHI TAKASHI

IPC: G11C19/28 ,  H03K3/286 ,  H03K5/02 ,  H03K17/66 ,  H04N5/335 ,  H04N5/3725 ,  H04N5/378

Abstract: A drive circuit comprises output transistors (Q 13 , Q 14 ) of complementary type serially coupled to each other between voltage supply terminals (+B, -B), auxiliary transistors (Q 16 , Q1 7 ) of complementary type which have base electrodes respectively connected to the serial connection point between the output transistors (Q 13 , Q 14 ) and which are serially coupled between the respective base electrodes of the output transistors (Q 13 , Q 14 ), and resistors (R 12 , R 13 ) serially coupled between the voltage supply terminals (+B, -8) with their connection point coupled to the connection point of the auxiliary transistors (Q 15 , Q 16 ), an input clock signal being supplied to the respective base electrodes of the output transistors (Q 13 , Q 14 ) via coupling capacitors (C 11 , C 13 ).

公开(公告)号：CA1185006A

公开(公告)日：1985-04-02

申请号：CA403337

申请日：1982-05-19

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  NOGUCHI TAKASHI ,  OHTSU TAKAJI

IPC: H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/38

Abstract: Solid-state image pickup apparatus, such as an MOS imager, has a two-dimensional array of picture element units each formed of a photo sensitive element and a gating element. The picture unit elements discharge a signal charge onto vertical and horizontal transmitting lines in response to vertical and horizontal scanning pulses. Then, a resulting signal current is used to develop an output video signal. In order to give the output video signal a good S/N ratio, a gain-controlled current amplifier is employed. In several embodiments, the gain-controlled amplifier includes first through fourth transistors with the base-emitter junctions of the first and second transistors and of the third and fourth transistors connected in series, with a constant current source coupled to the first transistor, controlled current sources connected to the second and third transistors, and a load device coupled to the fourth transistor. In other embodiments, the gain controlled amplifier is formed of first, second, and third current mirror circuits connected in a balanced-current arrangement. Electrically variable resistances, e.g., MOS transistors, are coupled to the output transistors of the first and second current mirror circuits to control the current gain.

公开(公告)号：GB2100952B

公开(公告)日：1984-11-21

申请号：GB8213083

申请日：1982-05-06

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  SONEDA MITSUO ,  OHTSU TAKAJI

IPC: H04N5/14 ,  H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N5/197 ,  H03F3/04

Abstract: Solid-state image pickup apparatus, such as an MOS imager, has a two-dimensional array of picture element units each formed of a photo sensitive element and a gating element, and scanning circuits for supplying horizontal and vertical scanning pulses. The picture unit elements in turn discharge a signal charge onto vertical and horizontal transmitting lines in response to the vertical and horizontal scanning pulses. Then, a resulting signal current is used to develop an output video signal. In order to provide a strong output video signal with a good S/N ratio, a current mirror circuit, formed of an input transistor and an output transistor with first current-carrying electrodes joined together to a voltage reference point and with control electrodes joined together, amplifies the signal current. A second current-carrying electrode of the input transistor receives a constant current from a current source and also receives the signal current. The output transistor has a second current-carrying electrode connected to an output load. Another current source can be connected to the output transistor so that only AC current will flow to the output load. The output load can be a load capacitor associated with a pre-charging transistor, or can be a serial charge transfer device.

公开(公告)号：DE3217046A1

公开(公告)日：1983-01-20

申请号：DE3217046

申请日：1982-05-06

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  NOGUCHI TAKASHI ,  OHTSU TAKAJI

IPC: H04N5/14 ,  H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

Abstract: Solid-state image pickup apparatus, such as an MOS imager, has a two-dimensional array of picture element units each formed of a photo sensitive element and a gating element, and scanning circuits for supplying horizontal and vertical scanning pulses. The picture unit elements in turn discharge a signal charge onto vertical and horizontal transmitting lines in response to the vertical and horizontal scanning pulses. Then, a resulting signal current is used to develop an output video signal. In order to provide a strong output video signal with a good S/N ratio, a current mirror circuit, formed of an input transistor and an output transistor with first current-carrying electrodes joined together to a voltage reference point and with control electrodes joined together, amplifies the signal current. A second current-carrying electrode of the input transistor receives a constant current from a current source and also receives the signal current. The output transistor has a second current-carrying electrode connected to an output load. Another current source can be connected to the output transistor so that only AC current will flow to the output load. The output load can be a load capacitor associated with a pre-charging transistor, or can be a serial charge transfer device.

公开(公告)号：DE60140076D1

公开(公告)日：2009-11-12

申请号：DE60140076

申请日：2001-12-20

Applicant: SONY CORP

Inventor： YAMAGATA HIDEO ,  KOUMOTO TAKEYOSHI ,  ATSUUMI KENJI ,  NEGORO YOICHI ,  HIRATA TATSUSHIRO ,  NOGUCHI TAKASHI

IPC: H01L21/205 ,  C23C16/22 ,  C30B25/02 ,  H01L21/20 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737

Abstract: In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a silicon raw material gas partial pressure increases in proportion to a time to thereby deposit a first semiconductor layer of a silicon layer on the semiconductor substrate under reduced pressure, a second step of introducing silicon raw material gas and germanium raw material gas into the reaction furnace in such a manner that a desired germanium concentration may be obtained to thereby deposit a second semiconductor layer of a silicon-germanium mixed crystal layer on the first semiconductor layer under reduced pressure and a third step of introducing silicon raw material gas into the reaction furnace under reduced pressure to thereby deposit a third semiconductor layer of a silicon layer on the second semiconductor layer. Thus, there can be obtained a semiconductor layer in which a misfit dislocation can be improved.

公开(公告)号：DE3541587A1

公开(公告)日：1986-05-28

申请号：DE3541587

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L21/18 ,  H01L29/04 ,  H01L29/78 ,  H01L21/84 ,  C30B1/02 ,  C30B31/22 ,  C30B29/06

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：CA1185005A

公开(公告)日：1985-04-02

申请号：CA402178

申请日：1982-05-03

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  NOGUCHI TAKASHI ,  OHTSU TAKAJI

IPC: H04N5/14 ,  H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N5/38

Abstract: Solid-state image pickup apparatus, such as an MOS imager, has a two-dimensional array of picture element units each formed of a photo sensitive element and a gating element, and scanning circuits for supplying horizontal and vertical scanning pulses. The picture unit elements in turn discharge a signal charge onto vertical and horizontal transmitting lines in response to the vertical and horizontal scanning pulses. Then, a resulting signal current is used to develop an output video signal. In order to provide a strong output video signal with a good S/N ratio, a current mirror circuit, formed of an input transistor and an output transistor with first current-carrying electrodes joined together to a voltage reference point and with control electrodes joined together, amplifies the signal current. A second current-carrying electrode of the input transistor receives a constant current from a current source and also receives the signal current. The output transistor has a second current-carrying electrode connected to an output load. Another current source can be connected to the output transistor so that only AC current will flow to the output load. The output load can be a load capacitor associated with a pre-charging transistor, or can be a serial charge transfer device.