MAGNETIC RECORDING HEAD, AND ITS MANUFACTURING METHOD

    公开(公告)号:JP2001126216A

    公开(公告)日:2001-05-11

    申请号:JP30462299

    申请日:1999-10-26

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To increase the internal transfer speed of a hard disk by enabling high-frequency current driving. SOLUTION: In a magnetic recording head having the multi-layer structure thin-film coil of two or more layers, flattening processing is executed by machine polishing on a thin-film coil forming surface, where a thin-film coil after the second layer is formed.

    PRODUCTION OF THIN-FILM MAGNETIC HEAD

    公开(公告)号:JP2000276708A

    公开(公告)日:2000-10-06

    申请号:JP8236799

    申请日:1999-03-25

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To finely form the track width of an upper layer pole regulating track width with high accuracy. SOLUTION: A plating ground film 20 is deposited on a sixth nonmagnetic layer 16 and an upper layer pole 14a is formed by a flame plating method. Next, a first resist film 22 is formed on the one flank side of the upper layer pole 14a and is subjected to an etching treatment. The first resist film 22 is then removed and a second resist film 23 is formed on another flank side and is similarly subjected to the etching treatment.

    ETCHING METHOD AND PRODUCTION OF THIN-FILM MAGNETIC HEAD

    公开(公告)号:JPH11350171A

    公开(公告)日:1999-12-21

    申请号:JP15481998

    申请日:1998-06-03

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To uniformly irradiate a substrate with a beam and to eliminate the variation of the etching quantity within the substrate by largely repetitively turning the substrate in an intra-surface direction in an etching stage using the ion beam. SOLUTION: When the substrate is not turned, the substrate is irradiated with the ion beam 30 approximately parallel with the longs side on the upper surface of a second pole 8. The substrate is repetitively turned and moved back and forth between the position of 180 deg. in a plus direction and a position of 180 deg. in a minus direction. As the substrate is turned, the irradiation direction of the ion beam 30 with second pole 8 changes and the portion which is the shade of the second pole 8 changes accordingly. The direction where the irradiation direction of the ion beam 30 with the second pole 8 is successively varied by repetitively moving the substrate within a specified range. Even if, therefore, the shape of the second pile 8 is asymmetrical on the front side and the rear side, the uniform irradiation with the ion beam 30 is made possible.

    MANUFACTURE OF THIN-FILM MAGNETIC HEAD

    公开(公告)号:JPH11316907A

    公开(公告)日:1999-11-16

    申请号:JP12491798

    申请日:1998-05-07

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film magnetic head whose the record fringing is reduced by preventing a nonmagnetic layer and a 1st magnetic body which are left at the time of trim etching and removed matters from being restuck. SOLUTION: This method is provided with a 1st magnetic body forming process for forming a 1st magnetic body 4 becoming a 1st magnetic core on a base body, a nonmagnetic layer forming process for forming a nonmagnetic layer 6 becoming a magnetic gap on the 1st magnetic body, a 2nd magnetic body forming process for forming a 2nd magnetic body 11 in a specific shape becoming a 2nd magnetic core on the nonmagnetic layer 6 and an etching process for making the nonmagnetic layer 6 and the 1st magnetic body 4 integrally in a specific shape by ion beam etching by using the 2nd magnetic body 11 as a mask. Then, in the etching process, 1st etching is carried out while the base body is slanted at a specific angle to the incidence direction of the ion beam and is repeatedly rotated within a specific angle range and 2nd etching is carried out while the base body is slanted within an angle range larger than that of the 1st etching and is repeatedly rotated within an angle range larger than that of the 1st etching.

    MAGNETORESISTANCE EFFECT ELEMENT
    25.
    发明专利

    公开(公告)号:JPH1041562A

    公开(公告)日:1998-02-13

    申请号:JP19754896

    申请日:1996-07-26

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a magneto resistance effect element where the sensitiveness is improved without the effective ansiotropic magnetic field working on a magnetoresistance effect layer being increased by a sense current magnetic field. SOLUTION: This magnetoresistance effect element is equipped with a magnetic field detector 2 which has a magnetoresistance effect film showing a magnetoresistance effect and is supplied with a sense current, in roughly parallel with an outer magnetic field, and an antiferromagnetic film 3 which is arranged next to the magnetoresistance effect film of this magnetic field detector 2. In this magnetoresistance effect element, the direction of the magnetic field generated from the antiferromagnetic film 3 roughly oppositely parallel with the direction of the sense current magnetic field applied to the magnetoresistance effect film of the above magnetic field detector 2, out of the sense current magnetic field generated from the sense current.

    Variable resistor element, and memory device
    26.
    发明专利
    Variable resistor element, and memory device 有权
    可变电阻元件和存储器件

    公开(公告)号:JP2009071105A

    公开(公告)日:2009-04-02

    申请号:JP2007239011

    申请日:2007-09-14

    Abstract: PROBLEM TO BE SOLVED: To provide a variable resistor element which can get rid of an increase of an erase time even if increasing an area to increase the rewritable number of time.
    SOLUTION: The variable resistor element includes electrodes 11, 14 opposed each other and a variable resistor layer which is formed at least in the opposed region of electrodes 11, 14 and its resistance value changes corresponding to the direction of electric field produced between the electrodes 11, 14 by applying a voltage to electrodes 11, 14. The electrodes 11, 14 have a shape different from a perfect circle or a square. When deforming the opposed portion of the electrodes 11, 14 to a perfect circle or a square which has an area same as the area of the opposed portion of the electrodes 11, 14. The electrodes have a shape and size so that a difference between an upper limit value and lower limit value of inside strength distribution of the electric field produced in the opposed region of electrodes 11, 14 is smaller than a difference between an upper limit value and lower limit value of inside strength distribution of the electric field produced in the deformed opposed region of its two electrodes.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种可变电阻器元件,其可以消除擦除时间的增加,即使增加面积以增加可重写的时间数量。 解决方案:可变电阻器元件包括彼此相对的电极11,14和至少形成在电极11,14的相对区域中的可变电阻层,并且其电阻值对应于电场方向 电极11,14通过向电极11,14施加电压。电极11,14具有不同于正圆或正方形的形状。 当将电极11,14的相对部分变形成具有与电极11,14的相对部分的面积相同的正圆或正方形时,电极的形状和尺寸使得 在电极11,14的相对区域产生的电场的内部强度分布的上限值和下限值小于在电极11,14中产生的电场的内部强度分布的上限值和下限值之间的差 其两个电极的变形相对区域。 版权所有(C)2009,JPO&INPIT

    Storage element and storage device
    27.
    发明专利
    Storage element and storage device 有权
    存储元件和存储设备

    公开(公告)号:JP2009049322A

    公开(公告)日:2009-03-05

    申请号:JP2007216398

    申请日:2007-08-22

    Abstract: PROBLEM TO BE SOLVED: To provide a storage element which can be improved simultaneously in a plurality of characteristics in a trade-off relation in the composition ratio regulation of one element in an ion source layer.
    SOLUTION: A lower electrode 11, a high-resistance layer 12, the ion source layer 13 and an upper electrode 14 are arranged in this order. The ion source layer 13 has two layers of a first ion source layer 13A provided on the high-resistance layer 12 side, and a second ion source layer 13B provided on the upper electrode 14 side. The first ion source layer 13A contains at least Zr. The second ion source layer 13B contains at least one metal element of Cu, Ag and Zn, and at least one chalcogen element of Te, S and Se.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 解决的问题:提供一种可以在离子源层中的一个元素的组成比调节中以权衡关系的多个特性同时改善的存储元件。 解决方案:下电极11,高电阻层12,离子源层13和上电极14按此顺序排列。 离子源层13具有设置在高电阻层12侧的第一离子源层13A和设置在上部电极14侧的第二离子源层13B的两层。 第一离子源层13A至少含有Zr。 第二离子源层13B包含至少一种Cu,Ag和Zn的金属元素和至少一种Te,S和Se的硫属元素。 版权所有(C)2009,JPO&INPIT

    THIN FILM MAGNETIC RECORDING HEAD AND ITS MANUFACTURING METHOD

    公开(公告)号:JP2002216316A

    公开(公告)日:2002-08-02

    申请号:JP2001006670

    申请日:2001-01-15

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a high performance thin film magnetic recording head capable of high density recording, which has a narrow tip to fit a narrow recording track while suppressing the fringing magnetic field from other parts of the head, and its manufacturing method. SOLUTION: This thin film recording head 10 consists of a coil 3 disposed at least apart from the lower magnetic pole 1 and the upper magnetic pole 2 which have their tips 1A, 2A to form the sliding surfaces 1B, 2B fitting the recording track width, and rear parts 1C, 2C formed back the depth zero line 2D(Dp 0). After forming the lower pole 1 and the upper pole 2, focused ion beam etching is applied to trim them from the sliding surface to back the depth zero line except their tips 1A, 2A made to fit the recording track in width, to manufacture this head.

    MAGNETO-RESISTIVE MAGNETIC HEAD
    29.
    发明专利

    公开(公告)号:JPH09270106A

    公开(公告)日:1997-10-14

    申请号:JP7798696

    申请日:1996-03-29

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain larger regenerative output by preventing fusion of a magneto-resistance effect element and efficiently detecting a signal magnetic field from a magnetic recording medium. SOLUTION: A magneto-resistive magnetic head is provided with a first MR (magneto-resistance effect) element 6 which is installed so that a sense current flows in a direction approximately perpendicular to a running direction of the magnetic recording medium 20, a first electrode 7 installed at a rear end part 6B of the first MR element 6, an intermediate insulating layer 8 installed on the first MR element 6, a second MR element 9 installed on the intermediate insulating layer 8 and a second electrode 10 installed at a rear end part 9B of the second MR element 9. Then, another end part 9A of the second MR element 9 is electrically connected with a top end part 6A of the first MR element 6.

    MAGNETO-OPTICAL REPRODUCING PICKUP
    30.
    发明专利

    公开(公告)号:JPH07235095A

    公开(公告)日:1995-09-05

    申请号:JP26750794

    申请日:1994-10-31

    Applicant: SONY CORP

    Abstract: PURPOSE:To easily compensate a phase difference between two intrinsic modes (integral multiple of pi) and to reduce deterioration in quality of a reproducing signal due to the elliptical polarization of a light even when there are a variance in manufactured waveguides, fluctuations in an optical parameter due to temperature changes, fluctuations in the wavelengths of emitted lights, etc. CONSTITUTION:This device is provided with an optical waveguide 4 for guiding the TE mode component of a laser light emitted from a light emitting means 5 to the magneto-optical recording medium side and guiding a reflective light from the magneto-optical recording medium to the differential light detecting part 9 side and this optical waveguide 4 is provided with a phase compensating means for compensating a phase difference between the light components of TE and TM modes included in the reflective light. In this case, the phase compensating means is constituted of an optical waveguide constituted on a base plate made of an electrical optical crystal by forming a thin film having a light refractive index higher than that of this base plate, phase control electrodes (21a and 21b) for impressing a magnetic field to this optical waveguide in a direction along the TM mode and a feedback circuit 11.

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